CRTT170N10N
华润微电子(重庆)有限公司
Features
• Uses CRM(CQ) advanced Trench technology
• Extremely low on-resistance R
DS(on)
• Excellent Q
g
xR
DS(on)
product(FOM)
• Qualified according to JEDEC criteria
Applications
• Motor control and drive
• Battery management
• UPS (Uninterrupible Power Supplies)
Trench N-MOSFET 100V, 15mΩ, 60A
Product Summary
V
DS
R
DS(on) typ.
I
D
100V
15mΩ
60A
100% DVDS Tested
100% Avalanche Tested
Package Marking and Ordering Information
Part #
CRTT170N10N
Marking
CRTT170N10N
Package
TO-220
Packing
Tube
Reel Size
N/A
Tape Width
N/A
Qty
50pcs
Absolute Maximum Ratings
Parameter
Drain-source voltage
Continuous drain current
T
C
= 25°C (Silicon limit)
T
C
= 25°C (Package limit)
T
C
= 100°C (Silicon limit)
Pulsed drain current (T
C
= 25°C, t
p
limited by T
jmax
)
Avalanche energy, single pulse (L=0.5mH, Rg=25Ω)
Gate-Source voltage
Power dissipation (T
C
= 25°C)
Operating junction and storage temperature
Soldering temperature, wave soldering only allowed at leads
(1.6mm from case for 10s)
I
D pulse
E
AS
V
GS
P
tot
T
j
,
T
stg
T
sold
I
D
60
80
38
240
100
±25
151
-55...+150
260
A
mJ
V
W
°C
°C
A
Symbol
V
DS
Value
100
Unit
V
©China Resources Microelectronics (Chongqing) Limited
Page 1
CRTT170N10N
华润微电子(重庆)有限公司
Thermal Resistance
Parameter
Thermal resistance, junction – case.
Thermal resistance, junction – ambient(min. footprint)
Symbol
R
thJC
R
thJA
*
Max
0.83
84
Unit
°C/W
Trench N-MOSFET 100V, 15mΩ, 60A
Electrical Characteristic
(at Tj = 25 °C, unless otherwise specified)
Parameter
Symbol
Value
min.
typ.
max.
Unit
Test Condition
Static Characteristic
Drain-source breakdown
voltage
Gate threshold voltage
BV
DSS
V
GS(th )
100
2.4
-
3
-
3.6
V
V
V
GS
=0V, I
D
=250uA
V
DS
=V
GS
,I
D
=250uA
V
DS
=100V,V
GS
=0V
Zero gate voltage drain
current
Gate-source leakage
current
Drain-source on-state
resistance
Transconductance
I
DSS
-
-
I
GSS
-
0.05
-
±10
1
50
±100
nA
µA
T
j
=25°C
T
j
=150°C
V
GS
=±25V,V
DS
=0V
V
GS
=10V, I
D
=30A,
R
DS(on)
-
-
g
fs
-
15
35
110
17
42
-
S
mΩ
T
j
=25°C
T
j
=150°C
V
DS
=10V,I
D
=30A
Dynamic Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Gate Total Charge
Gate-Source charge
Gate-Drain charge
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Gate resistance
C
iss
C
oss
C
rss
Q
G
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
R
G
-
-
-
-
-
-
-
-
-
-
-
4172
199
110
84
24
23
17
54
43
53
0.8
-
-
-
-
-
-
-
-
-
-
-
Ω
V
GS
=0V, V
DS
=0V,
f=1MHz
ns
V
GS
=10V, V
DD
=50V,
R
G_ext
=2.7Ω
nC
V
GS
=10V, V
DS
=50V,
I
D
=30A, f=1MHz
pF
V
GS
=0V, V
DS
=50V,
f=1MHz
©China Resources Microelectronics (Chongqing) Limited
Page 2
CRTT170N10N
华润微电子(重庆)有限公司
Body Diode Characteristic
Parameter
Body Diode Forward
Voltage
Body Diode Forward
Current
Body Diode Reverse
Recovery Time
Body Diode Reverse
Recovery Charge
Symbol
Trench N-MOSFET 100V, 15mΩ, 60A
Value
min.
-
typ.
0.9
max.
1.4
60
-
-
45
104
-
-
Unit
V
A
ns
nC
Test Condition
V
GS
=0V,I
SD
=30A
T
C
= 25°C
V
SD
I
S
t
rr
Q
rr
I
F
=30A, dI/dt=100A/µ
s
*The value of R
thJA
is measured by placing the device in a still air box which is one cubic foot.
©China Resources Microelectronics (Chongqing) Limited
Page 3
CRTT170N10N
华润微电子(重庆)有限公司
Trench N-MOSFET 100V, 15mΩ, 60A
Typical Performance Characteristics
Fig 1: Output Characteristics
200
200
Fig 2: Transfer Characteristics
T
j
=25°C
V
DS
=5V
160
160
10V
6V
5.5V
I
D
(A)
5.0V
80
I
D
(A)
120
120
80
150°C
40
V
GS
=4.5V
40
25°C
0
0
2
4
6
8
10
0
1
2
3
4
5
6
V
DS
(V)
V
GS
(V)
22
Fig 3: Rds(on) vs Drain Current and
Gate Voltage
Fig 4: Rds(on) vs Gate Voltage
60
T
j
=25°C
20
I
D
=30A
50
R
DS(on)
(mΩ)
R
DS(on)
(mΩ)
18
40
150°C
V
GS
=7V
16
V
GS
=10V
30
14
20
25°C
12
0
20
40
60
80
100
10
4
5
6
7
8
9
10
I
D
(A)
V
GS
(V)
Fig 5: Rds(on) vs. Temperature
2.5
Fig 6: Capacitance Characteristics
100000
C - Capacitance (PF)
2.0
V
GS
=10V
I
D
=30A
R
DS(on)
_Normalized
10000
Ciss
1.5
1000
Coss
1.0
100
0.5
V
GS
=0V
f=1MHz
10
-50
-25
0
25
50
75
100
125
150
0
20
40
Crss
0.0
60
80
100
Tj - Junction Temperature (°C)
V
DS
(V)
©China Resources Microelectronics (Chongqing) Limited
Page 4
CRTT170N10N
华润微电子(重庆)有限公司
Trench N-MOSFET 100V, 15mΩ, 60A
Fig 8: Body-diode Forward
Characteristics
Fig 7: Gate Charge Characteristics
10
1000
I
D
=30A
8
V
GS
(V)
6
V
DS
=25V
V
DS
=50V
I
S
- Diode Current(A)
100
150˚C
25˚C
10
4
2
0
0
18
36
54
72
90
1
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
Qg (nC)
V
SD
- Diode Forward Voltage(V)
Fig 9: Power Dissipation
160
140
120
Fig 10: Drain Current Derating
70
60
50
P
tot
(W)
I
D
(A)
100
80
60
40
20
0
0
25
50
75
100
125
150
40
30
20
10
0
0
25
50
75
100
125
150
175
V
GS
≥10V
Tc - Case Temperature (°C)
Tc - Case Temperature (°C)
Fig 11: Safe Operating Area
1000
100
Limited by
Rds(on)
1us
10us
I
D
(A)
100us
10
1ms
10ms
1
DC
Single pulse
Tc=25˚C
0.1
0.1
1
10
100
V
DS
(V)
©China Resources Microelectronics (Chongqing) Limited
Page 5
微控制器 MCU
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