CRSM072N10N2
华润微电子(重庆)有限公司
Features
• Uses CRM(CQ) advanced SkyMOS2 technology
• Extremely low on-resistance R
DS(on)
• Excellent Q
g
xR
DS(on)
product(FOM)
• Qualified according to JEDEC criteria
Applications
• Synchronous Rectification for AC/DC Quick Charger
• Battery management
• UPS (Uninterrupible Power Supplies)
V
DS
R
DS(on)@10V typ
I
D
SkyMOS2 N-MOSFET 100V, 6mΩ, 100A
Product Summary
100V
6mΩ
100A
100% Avalanche Tested
100% DVDS Tested
Package Marking and Ordering Information
Part #
CRSM072N10N2
Marking
072N10N2
Package
Packing
Reel Size
N/A
Tape Width
N/A
Qty
5000pcs
DFN5X6 clip Tape&Reel
Absolute Maximum Ratings
Parameter
Drain-source voltage
Continuous drain current
T
C
= 25°C
T
C
= 100°C
Pulsed drain current (T
C
= 25°C, t
p
limited by T
jmax
)
Avalanche energy, single pulse (I
D
=30, Rg=25Ω)
Gate-Source voltage
Power dissipation (T
C
= 25°C)
Operating junction and storage temperature
Soldering temperature, wave soldering only allowed at leads
(1.6mm from case for 10s)
I
D pulse
E
AS
V
GS
P
tot
T
j
,
T
stg
Tsold
I
D
100
53
400
135
±20
94
-55...+150
260
A
mJ
V
W
°C
°C
A
Symbol
V
DS
Value
100
Unit
V
©China Resources Microelectronics (Chongqing) Limited
Page 1
CRSM072N10N2
华润微电子(重庆)有限公司
Thermal Resistance
Parameter
Thermal resistance,
junction – case.
Thermal resistance,
junction - ambient(min.
footprint)
Symbol
RthJC
Value
min.
-
typ.
0.8
max.
1.3
Unit
°C/W
Test Condition
-
SkyMOS2 N-MOSFET 100V, 6mΩ, 100A
RthJA
-
-
64
°C/W
-
Electrical Characteristic
(at Tj = 25 °C, unless otherwise specified)
Parameter
Symbol
Value
min.
typ.
max.
Unit
Test Condition
Static Characteristic
Drain-source breakdown
voltage
Gate threshold voltage
Zero gate voltage drain
current
Gate-source leakage
current
Drain-source on-state
resistance
BV
DSS
V
GS(th )
I
DSS
100
2
-
-
I
GSS
R
DS(on)
-
-
Transconductance
g
fs
-
-
3
-
-
-
6.0
6.5
92.6
-
4
1
100
±100
7.2
8.1
-
nA
mΩ
mΩ
S
V
V
V
GS
=0V, I
D
=250uA
V
DS
=V
GS
,I
D
=250uA
V
DS
=100V,V
GS
=0V
µA
T
j
=25°C
T
j
=125°C
V
GS
=±20V,V
DS
=0V
VGS=10V,I
D
=50A
VGS=8V,I
D
=40A
V
DS
=5V,I
D
=50A
Dynamic Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Gate Total Charge
Gate-Source charge
Gate-Drain charge
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Gate resistance
C
iss
C
oss
C
rss
Q
G
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
R
G
-
-
-
-
-
-
-
-
-
-
-
2276
567
31
33.5
13.2
5.8
15.3
90.1
23.6
52.4
1
3414
850.5
62
50.25
19.8
11.6
-
-
-
-
1.5
Ω
V
GS
=0V, V
DS
=0V,
f=1MHz
ns
V
GS
=10V, V
DD
=50V,
R
G_ext
=2.7Ω
nC
V
GS
=10V, V
DS
=50V,
I
D
=50A, f=1MHz
pF
V
GS
=0V, V
DS
=50V,
f=1MHz
©China Resources Microelectronics (Chongqing) Limited
Page 2
CRSM072N10N2
华润微电子(重庆)有限公司
SkyMOS2 N-MOSFET 100V, 6mΩ, 100A
Body Diode Characteristic
Parameter
Body Diode Forward
Voltage
Body Diode Continuous
Forward Current
Body Diode Pulsed Current
Body Diode Reverse
Recovery Time
Body Diode Reverse
Recovery Charge
Symbol
Value
min.
-
-
-
-
-
typ.
0.87
-
-
60.2
135
max.
1.4
100
400
120.4
270
Unit
V
A
A
ns
nC
Test Condition
V
GS
=0V,I
SD
=50A
TC = 25°C
TC = 25°C
V
SD
I
S
I
S
pulse
t
rr
Q
rr
I
F
=50A,
dI/dt=100A/µs
©China Resources Microelectronics (Chongqing) Limited
Page 3
CRSM072N10N2
华润微电子(重庆)有限公司
SkyMOS2 N-MOSFET 100V, 6mΩ, 100A
Typical Performance Characteristics
Fig 1: Output Characteristics
120
280
240
200
Fig 2: Transfer Characteristics
7V
6.5V
I
D
(A)
110
100
90
80
70
60
50
40
10V
8V
V
DS
=5V
I
D
(A)
160
120
80
40
0
0
1
2
3
4
5
5.5V
150°C
25°C
30
20
4.5V
10
0
2
3
4
V
DS
(V)
5
V
GS
(V)
6
7
8
10.0
9.5
9.0
8.5
8.0
7.5
7.0
6.5
6.0
5.5
5.0
4.5
4.0
3.5
3.0
2.5
2.0
Fig 3: Rds(on) vs Drain Current and
Gate Voltage
Fig 4: Rds(on) vs Gate Voltage
50
45
40
I
D
=50A
R
DS(on)
(m )
R
DS(on)
(m )
V
GS
=8V
35
30
25
20
15
10
5
0
V
GS
=10V
150°C
25°C
4
5
6
7
8
9
10
20
70
120
170
I
D
(A)
V
GS
(V)
Fig 5: Rds(on) vs. Temperature
2.0
Fig 6: Capacitance Characteristics
10000
R
DS(on)
_Normalized
1.6
V
GS
=10V
I
D
=50A
C - Capacitance (PF)
1.8
Ciss
1000
1.4
1.2
V
GS
=8V
I
D
=50A
Coss
100
1.0
10
25
50
75
100
125
150
0
V
GS
=0V
f=1MHz
10
20
30
40
Crss
50
60
70
80
90
100
0.8
Tj - Junction Temperature (°C)
V
DS
(V)
©China Resources Microelectronics (Chongqing) Limited
Page 4
CRSM072N10N2
华润微电子(重庆)有限公司
SkyMOS2 N-MOSFET 100V, 6mΩ, 100A
Fig 8: Body-diode Forward
Characteristics
100
Fig 7: Gate Charge Characteristics
10
8
I
S
- Diode Current(A)
V
DS
=50V
I
D
=50A
V
GS
(V)
6
10
150˚C
25˚C
1
4
2
0
0
10
20
30
40
0.1
0
0.2
0.4
0.6
0.8
1
1.2
Qg (nC)
V
SD
- Diode Forward Voltage(V)
Fig 9: Power Dissipation
100
90
80
70
Fig 10: Drain Current Derating
90
80
70
60
P
tot
(W)
60
50
40
30
20
10
0
0
25
50
75
100
125
150
I
D
(A)
50
40
30
20
10
0
0
25
50
75
100
125
150
175
V
GS
≥10V
Tc - Case Temperature (°C)
Tc - Case Temperature (°C)
Fig 11: Safe Operating Area
1us
100
Limited by
Rds(on)
10us
100us
I
D
(A)
1ms
10
10ms
1
DC
Single pulse
Tc=25˚C
0.1
0.1
1
10
100
V
DS
(V)
©China Resources Microelectronics (Chongqing) Limited
Page 5
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