Silicon
N-Channel
Power Trench MOSFET
R
○
CS55N06 A3
General Description
：
CS55N06
A3,
the
silicon
N-channel
Enhanced
VDMOSFETs, is obtained by the high density Trenchtechnology
which reduce the conduction loss, improve switching performance
and enhance the avalanche energy. The transistor can be used in
various power switching circuit for system miniaturization and higher
efficiency. The package form is TO-251, which accords with the
RoHS standard.
V
DSS
I
D
R
DS(ON)Typ
60
55
10
V
A
mΩ
Features：
l
Fast Switching
l
ESD Improved Capability
l
Low ON Resistance
l
Low Gate Charge
l
Low Reverse transfer capacitances
l
100% Single Pulse avalanche energy Test
Applications
：
Power switch circuit of adaptor and charger.
Absolute
（T
J
= 25℃ unless otherwise specified）
：
Symbol
V
DSS
I
D
I
DM
a1
Parameter
Drain-to-Source Voltage
Continuous Drain Current T
C
= 25
°C
Continuous Drain Current T
C
= 100
°C
Pulsed Drain Current T
C
= 25
°C
Gate-to-Source Voltage
Rating
60
55
38
220
±20
135
69.5
150，–55 to 150
300
Units
V
A
A
A
V
mJ
W
℃
℃
V
GS
E
AS
P
D
T
J
，T
stg
T
L
a2
Single Pulse Avalanche Energy
Power Dissipation T
C
= 25
°C
Operating Junction and Storage Temperature Range
MaximumTemperature for Soldering
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CS55N06 A3
Electrical Characteristics
（T
J
= 25℃ unless otherwise specified）
：
OFF Characteristics
Symbol
V
DSS
I
DSS
I
GSS(F)
I
GSS(R)
Parameter
Drain to Source Breakdown Voltage
R
○
Test Conditions
V
GS
=0V,I
D
=250µA
V
DS
= 60V, V
GS
= 0V,
T
J
= 25℃
V
DS
=48V, V
GS
= 0V,
T
J
= 125℃
Rating
Min.
Typ.
Max.
Units
V
µA
60
--
--
--
--
--
--
--
--
--
--
1
100
100
-100
Drain to Source Leakage Current
Gate to Source Forward Leakage
Gate to Source Reverse Leakage
V
GS
=+20V
V
GS
=-20V
nA
nA
ON Characteristics
Symbol
R
DS(ON)
V
GS(TH)
Parameter
Drain-to-Source On-Resistance
V
GS
=4.5V,I
D
=20A
Test Conditions
V
GS
=10V,I
D
=20A
Rating
Min.
Typ.
Max.
Units
mΩ
mΩ
V
--
--
0.9
10
13
1.4
13
16
1.9
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= 250µA
Pulse width tp≤300µs,δ≤2%
Dynamic Characteristics
Symbol
R
g
C
iss
C
oss
C
rss
Parameter
Gate resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V
DS
=30V, V
GS
=0V,
f=1.0MHz
Test Conditions
V
GS
=0V, V
DS
=0V, f=1MHz
Rating
Min.
Typ.
Max.
Units
Ω
pF
--
--
--
--
2.4
2370
164
123
--
--
--
--
Resistive Switching Characteristics
Symbol
t
d(ON)
tr
t
d(OFF)
t
f
Q
g
Q
gs
Q
gd
Parameter
Turn-on Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain (“Miller”)Charge
V
DS
=30V, I
D
=20A,
V
GS
=10V
V
DD
=30V, I
D
=10A,
R
G
= 3Ω, V
GS
=10V
Test Conditions
Rating
Min.
Typ.
Max.
Units
--
--
--
--
--
--
--
13.1
25.1
60.8
9.0
50.7
7.0
12.3
--
--
--
--
--
--
nC
ns
W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D .
Pag e 2 of 10
2 0 1 9 V0 1
CS55N06 A3
R
○
Source-Drain Diode Characteristics
Symbol
V
SD
trr
Qrr
Parameter
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Test Conditions
I
S
=20A,V
GS
=0V
V
GS
=0V,
I
S
=20A,
di/dt=100A/us
Rating
Min.
Typ.
Max.
Units
V
ns
nC
--
--
--
--
22
19.5
1.2
--
--
Pulse width tp≤300µs,δ≤2%
Symbol
R
θ
JC
R
θ
JA
Parameter
Junction-to-Case
Junction-to-Ambient
Max.
1.8
100
Units
℃/W
℃/W
Notes：
a1
a2
：Repetitive
rating; pulse width limited by maximum junction temperature
：Vdd=25V，L=1mH,
I
D
=17A, Start T
J
=25℃
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P a ge 3 o f 1 0
2019V01
CS55N06 A3
Characteristics Curve：
80
70
60
V
GS
= 4.0V
100
V
GS
=4.5,5,6,10V
R
○
250μs
PULSE
TEST
PULSED TEST
VDS = 20V
I
D
,Drain Current,A
50
40
30
20
10
0
0
1
2
3
4
V
DS
,Drain-to-Source Voltage,V
5
V
GS
= 3V
V
GS
= 3.5V
I
D
,Drain Current,A
10
150℃
1
25℃
0.1
1
2
3
4
V
GS
,Gate-to-Source Voltage,V
5
Figure 1. Output Characteristics
14
Figure 2.Transfer Characteristics
R
DS(on),
Drain-to-Source On
Resistance,mΩ
13
12
11
10
9
8
0
V
GS
= 10V
PULSED TEST
T
j
= 25℃
10
V
GS
= 4.5V
PULSED TEST
V
GS
= 0V
I
SD
,Reverse Drain Current,A
150℃
1
25℃
0.1
0.2
0.4
0.6
0.8
V
SD
,Source-to-Drain Voltage,V
1
10
20
I
D
,Drain Current,A
30
Figure 3. Drain-to-Source On Resistance vs Drain
Current
10000
Figure 4. Typical Body Diode Transfer Characteristics
12
V
DS
= 30V
I
D
= 20A
Capacitance,pF
C
iss
1000
V
GS
,Gate-to-Source Voltage,V
10
8
6
4
2
0
C
oss
f = 1MHz
C
iss
= C
gs
+C
gd
C
oss
= C
ds
+C
gd
C
rss
100
0.1
1
10
100
V
DS
,Drain-to-Source Voltage,V
0
10
20
30
40
50
Q
G
,Total Gate Charge,nC
60
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD.
P a ge 4 of 1 0
2019V01
CS55N06 A3
R
○
WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD.
P a ge 5 o f 1 0
2 0 1 9 V0 1
DSP 与 ARM 处理器
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