CRST074N10L2
华润微电子(重庆)有限公司
Features
• Uses CRM(CQ) advanced SkyMOS2 technology
• Extremely low on-resistance R
DS(on)
• Excellent Q
g
xR
DS(on)
product(FOM)
• Qualified according to JEDEC criteria
Applications
• Synchronous Rectification for AC/DC Quick Charger
• Battery management
• UPS (Uninterrupible Power Supplies)
SkyMOS2 N-MOSFET 100V, 6.8mΩ, 80A
Product Summary
V
DS
R
DS(on)
I
D
100V
6.8mΩ
80A
100% Avalanche Tested
CRST074N10L2
Package Marking and Ordering Information
Part #
CRST074N10L2
Marking
Package
TO-220
Packing
Tube
Reel Size
N/A
Tape Width
N/A
Qty
50pcs
-
Absolute Maximum Ratings
Parameter
Drain-source voltage
Continuous drain current
T
C
= 25°C (Silicon limit)
T
C
= 25°C (Package limit)
T
C
= 100°C (Silicon limit)
Pulsed drain current (T
C
= 25°C, t
p
limited by T
jmax
)
Avalanche Current (L=0.5mH)
Avalanche energy, single pulse (L=0.5mH, Rg=25Ω)
Repeative avalanche Current (L=0.5mH)*
Repeative avalanche (L=0.5mH)*
Gate-Source voltage
Power dissipation (T
C
= 25°C)
Operating junction and storage temperature
I
D pulse
I
AS
E
AS
I
AR
E
AR
V
GS
P
tot
T
j
,
T
stg
I
D
120
80
76
320
21
110
15
56
±20
227
-55...+150
A
A
mJ
A
mJ
V
W
°C
A
Symbol
V
DS
Value
100
Unit
V
*Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and
duty cycles to keep initial TJ =25°C.
©China Resources Microelectronics (Chongqing) Limited
Page 1
CRST074N10L2
华润微电子(重庆)有限公司
Thermal Resistance
Parameter
Thermal resistance, junction – case.
Thermal resistance, junction – ambient(min. footprint)
Symbol
R
thJC
R
thJA
Max
0.55
62
Unit
°C/W
SkyMOS2 N-MOSFET 100V, 6.8mΩ, 80A
Electrical Characteristic
(at Tj = 25 °C, unless otherwise specified)
Parameter
Symbol
Value
min.
typ.
max.
Unit
Test Condition
Static Characteristic
Drain-source breakdown
voltage
Gate threshold voltage
BV
DSS
V
GS(th )
100
1.4
115
1.8
-
2.2
V
V
V
GS
=0V, I
D
=250uA
V
DS
=V
GS
,I
D
=250uA
V
DS
=100V,V
GS
=0V
Zero gate voltage drain
current
Gate-source leakage
current
I
DSS
-
-
I
GSS
-
0.05
-
±10
6.8
Drain-source on-state
resistance
R
DS(on)
-
Transconductance
g
fs
-
10.2
8.3
15.6
115
1
10
±100
8.2
12.8
10.0
19.5
-
nA
mΩ
mΩ
mΩ
mΩ
S
µA
T
j
=25°C
T
j
=125°C
V
GS
=±20V,V
DS
=0V
VGS=10V,I
D
=50A
T
j
=100°C
VGS=4.5V,I
D
=50A
T
j
=100°C
V
DS
=5V,I
D
=50A
Dynamic Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Gate Total Charge
Gate-Source charge
Gate-Drain charge
Turn-on delay time
Rise time
Turn-off delay time
Fall time
C
iss
C
oss
C
rss
Q
G
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
1313
228.5
19
-
-
-
-
-
-
-
2626
457
38
44.5
10.4
6.8
10.3
62
30
98
3939
685.5
76
66.8
15.6
10.2
15.5
93
45
147
ns
V
GS
=10V, V
DD
=50V,
R
G_ext
=3.0Ω
nC
V
GS
=10V, V
DS
=50V,
I
D
=50A, f=1MHz
pF
V
GS
=0V, V
DS
=50V,
f=1MHz
©China Resources Microelectronics (Chongqing) Limited
Page 2
CRST074N10L2
华润微电子(重庆)有限公司
Gate resistance
R
G
0.6
1.1
SkyMOS2 N-MOSFET 100V, 6.8mΩ, 80A
1.7
Ω
V
GS
=0V, V
DS
=0V,
f=1MHz
Body Diode Characteristic
Parameter
Body Diode Forward
Voltage
Body Diode Reverse
Recovery Time
Body Diode Reverse
Recovery Charge
Symbol
Value
min.
-
-
-
typ.
0.93
64
101
max.
1.4
128
202
Unit
V
ns
nC
Test Condition
V
GS
=0V,I
SD
=50A
V
SD
t
rr
Q
rr
I
F
=50A,
dI/dt=100A/µs
©China Resources Microelectronics (Chongqing) Limited
Page 3
CRST074N10L2
华润微电子(重庆)有限公司
SkyMOS2 N-MOSFET 100V, 6.8mΩ, 80A
Typical Performance Characteristics
Fig 1: Output Characteristics
100
280
240
200
Fig 2: Transfer Characteristics
V
DS
=5V
4.5V
I
D
(A)
80
10V
7V 5V
I
D
(A)
60
160
120
4V
125°C
40
3.5V
80
40
0
0
1
2
25°C
20
3V
2.5V
3
4
5
0
0
1
V
DS
(V)
2
V
GS
(V)
3
4
5
10.0
Fig 3: Rds(on) vs Drain Current and
Gate Voltage
9.0
Fig 4: Rds(on) vs Gate Voltage
20
I
D
=50A
V
GS
=4.5V
R
DS(on)
(m )
16
R
DS(on)
(m )
8.0
12
7.0
V
GS
=10V
125°C
8
6.0
4
25°C
5.0
4.0
20
30
40
50
60
70
80
90
100
0
2
4
6
8
10
I
D
(A)
V
GS
(V)
Fig 5: Rds(on) vs. Temperature
2.4
2.2
Fig 6: Capacitance Characteristics
10000
R
DS(on)
_Normalized
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0
25
50
75
100
125
150
175
C - Capacitance (PF)
V
GS
=10V
I
D
=50A
Ciss
1000
Coss
100
V
GS
=0V
f=1MHz
10
0
10
20
Crss
30
40
50
60
Tj - Junction Temperature (°C)
V
DS
(V)
©China Resources Microelectronics (Chongqing) Limited
Page 4
CRST074N10L2
华润微电子(重庆)有限公司
SkyMOS2 N-MOSFET 100V, 6.8mΩ, 80A
Fig 8: Body-diode Forward
Characteristics
100
Fig 7: Gate Charge Characteristics
10
8
I
S
- Diode Current(A)
V
DS
=50V
I
D
=50A
V
GS
(V)
10
6
125˚C
1
25˚C
4
0.1
2
0
0
10
20
30
40
50
0.01
0
0.2
0.4
0.6
0.8
1
1.2
1.4
Qg (nC)
V
SD
- Diode Forward Voltage(V)
Fig 9: Power Dissipation
250
Fig 10: Drain Current Derating
90
80
200
70
60
P
tot
(W)
150
I
D
(A)
50
40
30
100
50
20
10
V
GS
≥10V
0
0
25
50
75
100
125
150
0
0
25
50
75
100
125
150
175
Tc - Case Temperature (°C)
Tc - Case Temperature (°C)
Fig 11: Safe Operating Area
1000
1us
100
Limited by
Rds(on)
10us
100us
1ms
I
D
(A)
10
10ms
DC
1
Single pulse
Tc=25˚C
0.1
0.1
1
10
100
V
DS
(V)
©China Resources Microelectronics (Chongqing) Limited
Page 5
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