Silicon
N-Channel
Power Trench MOSFET
R
○
CS55N06 AQ3-G
General Description
：
CS55N06 AQ3-G, the silicon N-channel Enhanced
VDMOSFETs, is obtained by the high density Trenchtechnology
which reduce the conduction loss, improve switching performance
and enhance the avalanche energy. The transistor can be used in
various power switching circuit for system miniaturization and higher
efficiency. The package form is PDFN 5×6, which accords with the
RoHS standard.
V
DSS
I
D
（
Silicon limited current
）
R
DS(ON)Typ
60
55
11
V
A
mΩ
Features：
l
Fast Switching
l
Low ON Resistance
l
Low Gate Charge
l
Low Reverse transfer capacitances
l
100% Single Pulse avalanche energy Test
l
Halogen
Free
Applications
：
Power switch circuit of adaptor and charger.
Absolute
（Tc=
25℃ unless otherwise specified）
：
Symbol
V
DSS
I
D
I
DM
a1
Parameter
Drain-to-Source Voltage
Continuous Drain Current
Continuous Drain Current T
C
= 100
°C
Pulsed Drain Current
Gate-to-Source Voltage
Rating
60
55
38
220
±20
135
69.5
150，–55 to 150
Units
V
A
A
A
V
mJ
W
℃
V
GS
E
AS
P
D
T
J
，T
stg
a2
Single Pulse Avalanche Energy
Power Dissipation
Operating Junction and Storage Temperature Range
WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD.
P a ge 1 o f 1 0
2 0 1 9 V0 1
CS55N06 AQ3-G
R
○
：
Electrical Characteristics
（Tc=
25℃ unless otherwise specified）
OFF Characteristics
Symbol
V
DSS
I
DSS
I
GSS(F)
I
GSS(R)
Parameter
Drain to Source Breakdown Voltage
Test Conditions
V
GS
=0V,I
D
=250µA
V
DS
= 60V, V
GS
= 0V,
T
a
= 25℃
V
DS
=48V, V
GS
= 0V,
T
a
= 125℃
Rating
Min.
Typ.
Max.
Units
V
µA
60
--
--
--
--
--
--
--
--
--
--
1
100
100
-100
Drain to Source Leakage Current
Gate to Source Forward Leakage
Gate to Source Reverse Leakage
V
GS
=+20V
V
GS
=-20V
nA
nA
ON Characteristics
Symbol
R
DS(ON)
V
GS(TH)
Parameter
Drain-to-Source On-Resistance
V
GS
=4.5V,I
D
=20A
Test Conditions
V
GS
=10V,I
D
=20A
Rating
Min.
Typ.
Max.
Units
mΩ
mΩ
V
--
0.9
11
13
1.4
14
16
1.9
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= 250µA
Pulse width tp≤300µs,δ≤2%
Dynamic Characteristics
Symbol
C
iss
C
oss
C
rss
Parameter
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V
DS
=30V, V
GS
=0V,
f=1.0MHz
Test Conditions
Rating
Min.
Typ.
Max.
Units
--
--
--
2370
164
123
--
--
--
pF
Resistive Switching Characteristics
Symbol
t
d(ON)
tr
t
d(OFF)
t
f
Q
g
Q
gs
Q
gd
Parameter
Turn-on Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain (“Miller”)Charge
V
DS
=30V, I
D
=20A,
V
GS
=10V
V
DD
=30V, I
D
=10A,
R
G
= 3Ω, V
GS
=10V
Test Conditions
Rating
Min.
Typ.
Max.
Units
--
--
--
--
--
--
--
13.1
25.1
60.8
9.0
50.7
7.0
12.3
--
--
--
--
--
--
nC
ns
W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D .
P a g e 2 of 1 0
2019V01
CS55N06 AQ3-G
R
○
Source-Drain Diode Characteristics
Symbol
V
SD
trr
Qrr
Parameter
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Test Conditions
I
S
=20A,V
GS
=0V
V
GS
=0V,
I
S
=20A,
di/dt=100A/us
Rating
Min.
Typ.
Max.
Units
V
ns
nC
--
--
--
--
22
19.5
1.2
Pulse width tp≤300µs,δ≤2%
Symbol
R
θ
JC
Parameter
Junction-to-Case
Max.
1.8
Units
℃/W
Notes：
a1
a2
：Repetitive
rating; pulse width limited by maximum junction temperature
：Vdd=25V，L=1mH,
I
AS
=17A, Start T
J
=25℃
a3
：Recommend
soldering temperature defined by IPC/JEDEC J-STD 020
WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD.
P a ge 3 o f 1 0
2 0 1 9 V0 1
CS55N06 AQ3-G
Characteristics Curve：
80
70
60
V
GS
= 4.0V
100
V
GS
=4.5,5,6,10V
R
○
250μs
PULSE
TEST
PULSED TEST
VDS = 20V
I
D
,Drain Current,A
50
40
30
20
10
0
0
1
2
3
4
V
DS
,Drain-to-Source Voltage,V
5
V
GS
= 3V
V
GS
= 3.5V
I
D
,Drain Current,A
10
150℃
1
25℃
0.1
1
2
3
4
V
GS
,Gate-to-Source Voltage,V
5
Figure 1. Output Characteristics
14
Figure 2.Transfer Characteristics
R
DS(on),
Drain-to-Source On
Resistance,mΩ
13
12
11
10
9
8
0
V
GS
= 4.5V
PULSED TEST
T
j
= 25℃
10
PULSED TEST
V
GS
= 0V
I
SD
,Reverse Drain Current,A
150℃
1
25℃
V
GS
= 10V
0.1
0.2
0.4
0.6
0.8
V
SD
,Source-to-Drain Voltage,V
1
10
20
I
D
,Drain Current,A
30
Figure 3. Drain-to-Source On Resistance vs Drain
Current
10000
Figure 4. Typical Body Diode Transfer Characteristics
12
V
DS
= 30V
I
D
= 20A
Capacitance,pF
C
iss
1000
V
GS
,Gate-to-Source Voltage,V
10
8
6
4
2
0
C
oss
f = 1MHz
C
iss
= C
gs
+C
gd
C
oss
= C
ds
+C
gd
C
rss
100
0.1
1
10
100
V
DS
,Drain-to-Source Voltage,V
0
10
20
30
40
50
Q
G
,Total Gate Charge,nC
60
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD.
P a ge 4 o f 1 0
2 0 1 9 V0 1
CS55N06 AQ3-G
R
○
WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD.
P a ge 5 o f 1 0
2 0 1 9 V0 1
嵌入式系统
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
