Silicon N-Channel Power Trench MOSFET
CS100N06 D8
General Description
：
CS100N06 D8
the
silicon N-channel Enhanced
VDMOSFETs, is obtained by the high density Trench technology
which reduce the conduction loss, improve switching
performance and enhance the avalanche energy. The transistor
can be used in various power switching circuit for system
miniaturization and higher efficiency. The package form is
TO-220AB, which accords with the RoHS standard.
V
DSS
I
D
（
Silicon limited current
）
P
D
(T
C
=25℃)
R
DS(ON)Typ
R
○
60
100
156
6.5
V
A
W
mΩ
Features：
Fast Switching
Low ON Resistance (
Rdson≤10mΩ
)
Low Gate Charge
(Typical Data: 88.8nC)
Low Reverse transfer capacitances
(Typical:220pF)
100% Single Pulse avalanche energy Test
Applications
：
Power switch circuit of adaptor and charger.
Absolute
（Tc=
25℃ unless otherwise specified）
：
Symbol
V
DSS
I
D
I
DM
V
GS
E
AS
P
D
T
J
，T
stg
T
L
a1
Parameter
Drain-to-Source Voltage
Continuous Drain Current
Continuous Drain Current T
C
= 100 °
C
Pulsed Drain Current
Gate-to-Source Voltage
Rating
60
100
70
400
±
20
211
156
150，–55 to 150
300
Units
V
A
A
A
V
mJ
W
℃
℃
a2
Single Pulse Avalanche Energy
Power Dissipation
Operating Junction and Storage Temperature Range
Maximum Temperature for Soldering
W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D .
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CS100N06 D8
Electrical Characteristics
（Tc=
25℃ unless otherwise specified）
：
OFF Characteristics
Symbol
V
DSS
I
DSS
I
GSS(F)
I
GSS(R)
Parameter
Drain to Source Breakdown Voltage
R
○
Test Conditions
V
GS
=0V, I
D
=250µA
V
DS
= 60V, V
GS
= 0V,
T
a
= 25℃
V
DS
=48V, V
GS
= 0V,
T
a
= 125℃
Rating
Min.
Typ.
Max.
Units
V
60
--
--
--
--
--
--
--
--
--
--
1
Drain to Source Leakage Current
µA
100
100
-100
nA
nA
Gate to Source Forward Leakage
Gate to Source Reverse Leakage
V
GS
=+20V
V
GS
=-20V
ON Characteristics
Symbol
R
DS(ON)
V
GS(TH)
Parameter
Drain-to-Source On-Resistance
V
GS
=4.5V,I
D
=30A
Test Conditions
V
GS
=10V,I
D
=30A
Rating
Min.
Typ.
Max.
Units
mΩ
mΩ
V
--
--
1.0
6.5
9.1
10
12
3.0
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= 250µA
Pulse width tp≤300µs,δ≤2%
Dynamic Characteristics
Symbol
Rg
C
iss
C
oss
C
rss
Parameter
Gate resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V
GS
= 0V V
DS
= 25V
f = 1.0MHz
Test Conditions
VGS=0V, VDS=0V, f=1MHz
Rating
Min.
Typ.
Max.
Units
Ω
2.4
--
--
--
4398
296
220
--
--
--
pF
Resistive Switching Characteristics
Symbol
t
d(ON)
tr
t
d(OFF)
t
f
Q
g
Q
gs
Q
gd
Parameter
Turn-on Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain (“Miller”)Charge
I
D
=20A V
DD
=30V
V
GS
= 10V
I
D
=8A V
DD
=30V
V
GS
= 10V R
G
=9.1Ω
Test Conditions
Rating
Min.
Typ.
Max.
Units
--
--
--
--
--
--
--
25.3
95.7
154
77.9
88.8
17.3
17.4
--
--
--
--
--
--
nC
ns
W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D .
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2 01 6 V0 1
CS100N06 D8
R
○
Source-Drain Diode Characteristics
Symbol
I
S
I
SM
V
SD
trr
Qrr
Parameter
Continuous Source Current (Body Diode)
Maximum Pulsed Current (Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
I
S
=30A,V
GS
=0V
I
S
=30A,T
j
= 25°
C
dI
F
/dt=100A/us,
V
GS
=0V
Test Conditions
Rating
Min.
Typ.
Max.
Units
A
A
V
ns
nC
--
--
--
--
--
--
--
--
56
11.2
100
400
1.5
73
15
Pulse width tp≤300µs,δ≤2%
Symbol
R
θJC
R
θJA
Parameter
Junction-to-Case
Junction-to-Ambient
Max.
0.8
50
Units
℃/W
℃/W
Notes：
a1
a2
：Repetitive
rating; pulse width limited by maximum junction temperature
：L=0.1mH,
I
D
=65A, Start T
J
=25℃
W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D .
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CS100N06 D8
Characteristics Curve：
Figure 1. Maximum Effective Thermal impedance，Junction-to-Ambient
R
○
Note：
ID=30A
250us Pulse Test
W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D .
Page 4 of 10
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CS100N06 D8
Figure 6. Typical Transfer Characteristics
R
○
Figure 7. Typical Body Diode Transfer Characteristics
Figure 8. Typical Drain-to-Source ON
Resistance vs Drain Current
Figure 9. Drain-to-Source ON Resistance vs
Junction Temperature
Figure 10. Typical Breakdown Voltage vs Junction
Temperature
Figure 11. Typical Threshold Voltage vs Junction
Temperature
W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D .
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stm32/stm8
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