Silicon N-Channel Power Trench MOSFET
CS16N06 AE-G
General Description
：
CS16N06 AE-G the silicon N-channel Enhanced
VDMOSFETs, is obtained by the high density Trench technology
which reduce the conduction loss, improve switching
performance and enhance the avalanche energy. The transistor
can be used in various power switching circuit for system
miniaturization and higher efficiency. The package form is
SOP8, which accords with the RoHS standard.
V
DSS
I
D
（
Silicon limited current
）
P
D
(T
A
=25℃)
R
DS(ON) Typ@Vgs=10V
R
○
60
16
3.1
6.5
V
A
W
mΩ
Features：
l
Fast Switching
l
Low ON Resistance (
Rdson≤10mΩ)
l
Low Gate Charge
(Typical Data: 88.8nC)
l
Low Reverse transfer capacitances
(Typical:220pF)
l
100% Single Pulse avalanche energy Test
l
Halogen free
Applications
：
Power switch circuit of adaptor and charger.
Absolute
（T
A
= 25
℃
unless otherwise specified
）
：
Symbol
V
DSS
I
D
I
DM
a1
Parameter
Drain-to-Source Voltage
Continuous Drain Current
Continuous Drain Current T
C
= 100
°C
Pulsed Drain Current
Gate-to-Source Voltage
Rating
60
16
10.2
64
±20
211
3.1
150，–55 to 150
Units
V
A
A
A
V
mJ
W
℃
V
GS
E
AS
P
D
T
J
，T
stg
a2
Single Pulse Avalanche Energy
Power Dissipation
Operating Junction and Storage Temperature Range
W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D .
Pag e 1 of1 0
2 0 1 8 V0 1
CS16N06AE-G
Electrical Characteristics
（T
A
= 25
℃
unless otherwise specified
）
：
OFF Characteristics
Symbol
V
DSS
I
DSS
I
GSS(F)
I
GSS(R)
Parameter
Drain to Source Breakdown Voltage
R
○
Test Conditions
V
GS
=0V, I
D
=250µA
V
DS
= 60V, V
GS
= 0V,
T
a
= 25℃
V
DS
=48V, V
GS
= 0V,
T
a
= 125℃
Rating
Min.
Typ.
Max.
Units
V
µA
60
--
--
--
--
--
--
--
--
--
--
1
100
100
-100
Drain to Source Leakage Current
Gate to Source Forward Leakage
Gate to Source Reverse Leakage
V
GS
=+20V
V
GS
=-20V
nA
nA
ON Characteristics
Symbol
R
DS(ON)
V
GS(TH)
Parameter
Drain-to-Source On-Resistance
V
GS
=4.5V,I
D
=8A
Test Conditions
V
GS
=10V,I
D
=8A
Rating
Min.
Typ.
Max.
Units
mΩ
mΩ
V
--
--
1.0
6.5
9.1
10
12
3.0
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= 250µA
Pulse width tp≤380µs,δ≤2%
Dynamic Characteristics
Symbol
Rg
C
iss
C
oss
C
rss
Parameter
Gate resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V
GS
= 0V V
DS
= 25V
f = 1.0MHz
Test Conditions
VGS=0V, VDS=0V, f=1MHz
Rating
Min.
Typ.
Max.
Units
Ω
2.4
--
--
--
4398
296
220
--
--
--
pF
Resistive Switching Characteristics
Symbol
t
d(ON)
tr
t
d(OFF)
t
f
Q
g
Q
gs
Q
gd
Parameter
Turn-on Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain (“Miller”)Charge
I
D
=20A V
DD
=30V
V
GS
= 10V
I
D
=8A V
DD
=30V
V
GS
= 10V R
G
=9.1Ω
Test Conditions
Rating
Min.
Typ.
Max.
Units
--
--
--
--
--
--
--
25.3
95.7
154
77.9
88.8
17.3
17.4
--
--
--
--
--
--
nC
ns
W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D .
Pag e 2 of 1 0
2 0 1 8 V0 1
CS16N06 AE-G
R
○
Source-Drain Diode Characteristics
Symbol
I
S
I
SM
V
SD
trr
Qrr
Parameter
Continuous Source Current (Body Diode)
Maximum Pulsed Current (Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
I
S
=8A,V
GS
=0V
I
S
=8A,T
j
= 25°C
dI
F
/dt=100A/us,
V
GS
=0V
Test Conditions
Rating
Min.
Typ.
Max.
Units
A
A
V
ns
nC
--
--
--
--
--
--
--
--
56
11.2
16
64
1.5
73
15
Pulse width tp≤380µs,δ≤2%
Symbol
R
θJA
a1
a2
Parameter
Junction-to-Ambient
Max.
40
Units
℃
/W
：Repetitive
rating; pulse width limited by maximum junction temperature
：L=0.1mH,
I
D
=65A, Start T
J
=25
℃
a3
：Recommend
soldering temperature defined by IPC/JEDEC J-STD 020
W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D .
Pag e 3 of 1 0
2 0 1 8 V0 1
CS16N06 AE-G
Characteristics Curve：
Figure 1. Maximum Effective Thermal impedance，Junction-to-Ambient
R
○
Note：
ID=8A
250us Pulse Test
W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D .
Pag e 4 of 1 0
2018V01
CS16N06 AE-G
Figure 6. Typical Transfer Characteristics
R
○
Figure 7. Typical Body Diode Transfer Characteristics
Figure 8. Typical Drain-to-Source ON
Resistance vs Drain Current
Figure 9. Drain-to-Source ON Resistance vs
Junction Temperature
Figure 10. Typical Breakdown Voltage vs
Junction Temperature
Figure 11. Typical Threshold Voltage vs Junction
Temperature
W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D .
Pag e 5 of 1 0
2 0 1 8 V0 1
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