CRSE064N06L2
SkyMOS2 N-MOSFET 60V, 5.5mΩ, 16A
Features
• Uses CRM(CQ) advanced SkyMOS2 technology
• Extremely low on-resistance R
DS(on)
• Excellent Q
g
xR
DS(on)
product(FOM)
• Qualified according to JEDEC criteria
Applications
• Synchronous Rectification for AC/DC Quick Charger
• Battery management
• UPS (Uninterrupible Power Supplies)
V
DS
R
DS(on)@10V typ
R
DS(on)@4.5V typ
I
D
Product Summary
60V
5.5mΩ
7.3mΩ
16A
100% Avalanche Tested
CRSE064N06L2
Package Marking and Ordering Information
Part #
CRSE064N06L2
Marking
SE064N06L2
Package
SOP8
Packing
Tape&Reel
Reel Size
N/A
Tape Width
N/A
Qty
4000pcs
Absolute Maximum Ratings
Parameter
Drain-source voltage
Continuous drain current
T
A
= 25°C
T
A
= 75°C
Pulsed drain current (T
C
= 25°C, t
p
limited by T
jmax
)
Avalanche energy, single pulse (L=0.5mH, Rg=25Ω)
[1]
Gate-Source voltage
Power dissipation (T
C
= 25°C )
Operating junction and storage temperature
I
D pulse
E
AS
V
GS
P
tot
T
j
,
T
stg
I
D
16
13
65
267
±20
2.8
-55...+150
A
mJ
V
W
°C
A
Symbol
V
DS
Value
60
Unit
V
©China Resources Microelectronics (Chongqing) Limited
Page 1
CRSE064N06L2
SkyMOS2 N-MOSFET 60V, 5.5mΩ, 16A
Thermal Resistance
Parameter
Thermal resistance, junction – lead
Thermal resistance, junction – ambient(min. footprint)
Symbol
R
thJL
R
thJA
Max
21.80
45.0
Unit
°C/W
Electrical Characteristic
(at Tj = 25 °C, unless otherwise specified)
Parameter
Symbol
Value
min.
typ.
max.
Unit
Test Condition
Static Characteristic
Drain-source breakdown
voltage
Gate threshold voltage
BV
DSS
V
GS(th )
60
1.2
-
1.7
-
2.2
V
V
V
GS
=0V, I
D
=250uA
V
DS
=V
GS
,I
D
=250uA
V
DS
=60V,V
GS
=0V
Zero gate voltage drain
current
Gate-source leakage
current
Drain-source on-state
resistance
Transconductance
I
DSS
-
-
I
GSS
R
DS(on)
g
fs
-
-
-
-
0.02
-
10
5.5
7.3
88
1
10
100
6.6
9.1
-
nA
mΩ
S
µA
T
j
=25°C
T
j
=125°C
V
GS
=±20V,V
DS
=0V
V
GS
=10V, I
D
=12A
V
GS
=4.5V, I
D
=9.6A
V
DS
=5V,I
D
=12A
Dynamic Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Gate Total Charge
Gate-Source charge
Gate-Drain charge
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Gate resistance
C
iss
C
oss
C
rss
Q
G
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
R
G
-
-
-
-
-
-
-
-
-
-
-
1666
453
31
28
7.1
3.5
10.9
20.6
29.6
30.4
2
-
-
-
-
-
-
-
-
-
-
-
Ω
V
GS
=0V, V
DS
=0V,
f=1MHz
ns
V
GS
=10V, V
DD
=30V,
R
G_ext
=2.7Ω
nC
V
GS
=10V, V
DS
=30V,
I
D
=6A, f=1MHz
pF
V
GS
=0V, V
DS
=30V,
f=1MHz
©China Resources Microelectronics (Chongqing) Limited
Page 2
CRSE064N06L2
SkyMOS2 N-MOSFET 60V, 5.5mΩ, 16A
Body Diode Characteristic
Parameter
Body Diode Forward
Voltage
Body Diode Reverse
Recovery Time
Body Diode Reverse
Recovery Charge
Symbol
Value
min.
-
-
-
typ.
0.81
30
52
max.
1
-
-
Unit
V
ns
Test Condition
V
GS
=0V,I
SD
=12A
V
SD
t
rr
Q
rr
I
F
=6A, dI/dt=230A/µs
nC
©China Resources Microelectronics (Chongqing) Limited
Page 3
CRSE064N06L2
SkyMOS2 N-MOSFET 60V, 5.5mΩ, 16A
Typical Performance Characteristics
Fig 1: Output Characteristics
60
80
Fig 2: Transfer Characteristics
70
60
10V
40
3.5V
V
DS
=5V
I
D
(A)
I
D
(A)
50
40
30
20
3.0V
20
125°C
25°C
0
1
2
3
4
5
V
GS
=2.5V
0
0
1
2
3
4
5
10
0
V
DS
(V)
V
GS
(V)
Fig 3: Rds(on) vs Drain Current and
Gate Voltage
9.0
8.0
Fig 4: Rds(on) vs Gate Voltage
37
32
I
D
=12A
R
DS(on)
(m )
R
DS(on)
(m )
7.0
6.0
5.0
4.0
3.0
2.0
1
2
3
4
5
6
7
8
9
10 11 12 13 14 15
27
22
17
12
7
V
GS
=10V
150°C
25°C
2
0
1
2
3
4
5
6
7
8
9
10
I
D
(A)
V
GS
(V)
Fig 5: Rds(on) vs. Temperature
1.7
1.6
Fig 6: Capacitance Characteristics
R
DS(on)
_Normalized
1.5
1.4
1.3
1.2
1.1
1.0
0.9
0.8
25
50
75
100
125
150
V
GS
=10V
I
D
=12A
C - Capacitance (PF)
1000
Ciss
Coss
100
V
GS
=4.5V
I
D
=9.6A
V
GS
=0V
f=1MHz
10
0
10
20
Crss
30
40
50
60
Tj - Junction Temperature (°C)
V
DS
(V)
©China Resources Microelectronics (Chongqing) Limited
Page 4
CRSE064N06L2
SkyMOS2 N-MOSFET 60V, 5.5mΩ, 16A
Fig 8: Body-diode Forward
Characteristics
1000
Fig 7: Gate Charge
10
Characteristics
8
I
S
- Diode Current(A)
V
DS
=30V
I
D
=6A
100
V
GS
(V)
6
150˚C
10
25˚C
4
1
2
0
0
4
8
12
16
20
24
28
0.1
0.2
0.4
0.6
0.8
1
1.2
Qg (nC)
V
SD
- Diode Forward Voltage(V)
Fig 9: Power Dissipation
3
Fig 10: Drain Current Derating
18
16
14
2
12
P
tot
(W)
I
D
(A)
1
10
8
6
4
2
V
GS
≥10V
0
0
25
50
75
100
125
150
0
0
25
50
75
100
125
150
175
T
A
- Case Temperature (°C)
T
A
- Case Temperature (°C)
Fig 11: Safe Operating Area
1us
10
Limited by
Rds(on)
10us
100us
I
D
(A)
1
1ms
10ms
0.1
DC
Single pulse
Tc=25˚C
0.01
0.1
1
10
100
V
DS
(V)
©China Resources Microelectronics (Chongqing) Limited
Page 5
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