Silicon
N-Channel
Power
MOSFET
R
○
CS90N03 A8
General Description
：
CS90N03
A8,
the
silicon
N-channel
Enhanced
VDMOSFETs, is obtained by the high density Trench
technology which reduce the conduction loss, improve switching
performance and enhance the avalanche energy. This device is
suitable for use as a load switch and PWM applications. The
package form is TO-220AB, which accords with the RoHS
standard.
V
DSS
I
D
（
Silicon limited current
）
I
D
（
Package limited
）
P
D
R
DS(ON)Typ
30
90
60
53
3.6
V
A
A
W
mΩ
Features：
l
Fast Switching
l
Low ON Resistance
(Rdson≤5.5
mΩ)
l
Low Gate Charge
l
Low Reverse transfer capacitances
l
100% Single Pulse avalanche energy Test
Applications
：
Power switch circuit of adaptor and charger.
Absolute
（T
j
= 25℃ unless otherwise specified）
Symbol
V
DSS
I
D
I
DM
a1
Parameter
Drain-to-Source Voltage
Continuous Drain Current T
C
=25
°C
Continuous Drain Current T
C
= 100
°C
Pulsed Drain Current T
C
= 25
°C
Gate-to-Source Voltage
Rating
30
90
60
360
±20
240
53
0.424
150，–55 to 150
300
Units
V
A
A
A
V
mJ
W
W/℃
℃
℃
V
GS
E
AS
P
D
T
J
，T
stg
T
L
a2
Avalanche Energy
Power Dissipation T
C
= 25
°C
Derating Factor above 25°C
Operating Junction and Storage Temperature Range
MaximumTemperature for Soldering
W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D .
Pag e 1 of 1 0
2 0 1 8 V0 1
CS90N03 A8
Electrical Characteristics
（T
j
= 25
℃
unless otherwise specified）
：
OFF Characteristics
Symbol
V
DSS
I
DSS
I
GSS(F)
I
GSS(R)
Parameter
Drain to Source Breakdown Voltage
Drain to Source Leakage Current
Gate to Source Forward Leakage
Gate to Source Reverse Leakage
R
○
Test Conditions
V
GS
=0V, I
D
=250µA
V
DS
=30V, V
GS
= 0V,
T
j
= 25℃
V
DS
=24V, V
GS
= 0V,
T
j
= 125℃
V
GS
=20V
V
GS
=-20V
Rating
Min.
Typ.
Max.
Units
V
µA
nA
nA
30
--
--
--
--
--
--
--
--
--
--
1
100
100
-100
ON Characteristics
Symbol
R
DS(ON)
V
GS(TH)
Parameter
Drain-to-Source On-Resistance
V
GS
=4.5V,I
D
=19A
Test Conditions
V
GS
=10V,I
D
=19A
Rating
Min.
--
--
1.0
Typ.
3.6
5.0
1.5
Max.
5.5
7.5
2.0
Units
mΩ
mΩ
V
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= 250µA
Pulse width tp≤300µs,δ≤2%
Dynamic Characteristics
Symbol
R
g
C
iss
C
oss
C
rss
Parameter
Gate resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V
GS
= 0V V
DS
=15V
f = 1.0MHz
Test Conditions
V
GS
=0V, V
DS
=0V, f=1MHz
Rating
Min.
--
--
--
--
Typ.
2.2
2848
356
316
Max.
--
--
--
--
Units
Ω
pF
Resistive Switching Characteristics
Symbol
t
d(ON)
tr
t
d(OFF)
t
f
Q
g
Q
gs
Q
gd
Parameter
Turn-on Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain (“Miller”)Charge
I
D
=45A V
DD
=15V
V
GS
= 10V
V
GS
=10V，R
G
=3Ω
V
DD
=15V，I
D
=45A
Test Conditions
Rating
Min.
--
--
--
--
--
--
--
Typ.
13
8
56.5
12
53.5
8.2
12
Max.
--
--
--
--
--
--
--
Units
ns
nC
W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D .
Pag e 2 of 1 0
2 0 1 8 V0 1
CS90N03 A8
R
○
Source-Drain Diode Characteristics
Symbol
I
S
I
SM
V
SD
trr
Qrr
Parameter
Continuous Source Current (Body Diode)
Maximum Pulsed Current (Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
I
S
=45A,V
GS
=0V
di/dt=100A/us
IF=45A
Test
Conditions
T
C
= 25
°C
Rating
Min.
--
--
--
--
--
Typ.
--
--
--
12
4.2
Max.
90
360
1.2
--
--
Units
A
A
V
ns
nC
Pulse width tp≤300µs,δ≤2%
Symbol
R
θ
JC
R
θ
JA
a1
a2
Parameter
Junction-to-Case
Junction-to-Ambient
Max.
2.36
62.5
Units
℃/W
℃/W
：Repetitive
rating; pulse width limited by maximum junction temperature
：L=0.5mH,Ias=31A
Start T
J
=25℃
W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D .
Page 3 of 10
2 0 1 8 V0 1
CS90N03 A8
Characteristics Curve：
R
○
Figure 1．Maximum Safe Operating
Figure 2．Maximum Power Dissipation vs
Case Temperature
Figure3．Maximum Continuous Drain Current
vs Case Temperature
Figure4．
Typical Output Characteristics
Figure 5. Maximum Effective Transient Thermal Impedance, Junction-to-Case
W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D .
Page 4 of 10
2 0 1 8 V0 1
CS90N03 A8
R
○
Figure 6．Typical Transfer Characteristics
Figure 7．Typical Body Diode Transfer
Characteristics
Figure 8．
Drain-to-Source On Resistance
vs Drain Current
Figure 9. Typical Drian to Source on Resistance
vs Junction Temperature
Figure 10. Typical Theshold Voltage vs
Junction Temperature
Figure 11. Typical Breakdown Voltage vs
Junction Temperature
W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D .
Page 5 of 10
2 0 1 8 V0 1
微控制器 MCU
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
