Silicon
N-Channel
Power
MOSFET
R
○
CS100N03 B4-1
General Description
：
CS100N03 B4-1, the silicon N-channel Enhanced
VDMOSFETs, is obtained by the high density Trench
technology which reduce the conduction loss, improve switching
performance and enhance the avalanche energy. This device is
suitable for use as a load switch and PWM applications. The
package form is TO-252, which accords with the RoHS standard.
V
DSS
I
D
（
Silicon limited current
）
P
D
R
DS(ON)Typ
30
100
90
4
V
A
W
mΩ
Features：
l
Fast Switching
l
Low ON Resistance
(Rdson≤6 mΩ)
l
Low Gate Charge
l
Low Reverse transfer capacitances
l
100% Single Pulse avalanche energy Test
Applications
：
Power switch circuit of adaptor and charger.
Absolute
（T
C
= 25℃ unless otherwise specified）
Symbol
V
DSS
I
D
I
DM
a1
Parameter
Drain-to-Source Voltage
Continuous Drain Current
Continuous Drain Current T
C
= 100
°C
Pulsed Drain Current
Gate-to-Source Voltage
Rating
30
100
75
400
±20
100
90
0.71
150，–55 to 150
300
Units
V
A
A
A
V
mJ
W
W/℃
℃
℃
V
GS
E
AS
P
D
T
J
，T
stg
T
L
a2
Avalanche Energy
Power Dissipation
Derating Factor above 25°C
Operating Junction and Storage Temperature Range
MaximumTemperature for Soldering
W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D .
Pag e 1 of 9
2017V01
CS100N03B4-1
Electrical Characteristics
（T
J
= 25℃ unless otherwise specified）
：
OFF Characteristics
Symbol
V
DSS
I
DSS
I
GSS(F)
I
GSS(R)
Parameter
Drain to Source Breakdown Voltage
Drain to Source Leakage Current
Gate to Source Forward Leakage
Gate to Source Reverse Leakage
R
○
Test Conditions
V
GS
=0V, I
D
=250µA
V
DS
= 30V, V
GS
= 0V,
T
a
= 25℃
V
DS
=24V, V
GS
= 0V,
T
a
= 125℃
V
GS
=20V
V
GS
=-20V
Rating
Min.
Typ.
Max.
Units
V
µA
nA
nA
30
--
--
--
--
1
100
--
--
--
--
100
-100
ON Characteristics
Symbol
R
DS(ON)
R
DS(ON)
V
GS(TH)
Parameter
Drain-to-Source On-Resistance
Drain-to-Source On-Resistance
Gate Threshold Voltage
Test Conditions
V
GS
=10V,I
D
=50A
V
GS
=4.5V,I
D
=40A
V
DS
= V
GS
, I
D
= 250µA
Rating
Min.
--
--
1.0
Typ.
4
5
1.5
Max.
6
7.6
2.0
Units
mΩ
mΩ
V
Pulse width tp≤300µs,δ≤2%
Dynamic Characteristics
Symbol
R
g
C
iss
C
oss
C
rss
Parameter
Gate resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V
GS
= 0V V
DS
=25V
f = 1.0MHz
Test Conditions
VGS=0V, VDS=0V, f=1MHz
Rating
Min.
--
--
--
Typ.
1.95
2546
364
287
Max.
Units
Ω
pF
Resistive Switching Characteristics
Symbol
t
d(ON)
tr
t
d(OFF)
t
f
Q
g
(10V)
Q
gs
Q
gd
Parameter
Turn-on Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain (“Miller”)Charge
Vdd=15V，Id=30A，
V
GS
=10V
V
GS
=10V，R
G
=12Ω
V
DD
=15V，I
D
=30A
Test Conditions
Rating
Min.
--
--
--
--
--
--
--
Typ.
17
43
109
104
52.8
8.78
12.6
Max.
--
--
--
--
Units
ns
nC
W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D .
Pag e 2 of 9
2 0 1 7 V0 1
CS100N03 B4-1
Source-Drain Diode Characteristics
Symbol
I
S
I
SM
V
SD
trr
Qrr
Parameter
Continuous Source Current (Body Diode)
Maximum Pulsed Current (Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
I
S
=100A,V
GS
=0V
I
S
=30A,T
j
= 25°C
dI
F
/dt=100A/us,
V
GS
=0V
R
○
Test
Conditions
Rating
Min.
--
--
--
--
--
Typ.
--
--
--
23.5
12.4
Max.
100
400
1.5
--
--
Units
A
A
V
ns
nC
Pulse width tp≤300µs,δ≤2%
Symbol
R
θ
JC
R
θ
JA
a1
a2
Parameter
Junction-to-Csae
Junction-to-Ambient
Max.
1.39
100
Units
℃/W
℃/W
：Repetitive
rating; pulse width limited by maximum junction temperature
：L=0.1mH,
I
D
=47A, Start T
J
=25℃
W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D .
Pag e 3 of 9
2 0 1 7 V0 1
CS100N03 B4-1
Characteristics Curve：
R
○
Figure 1 Maximun Forward Bias Safe Operating Area
Figure 2 Typical Output Characteristics
Figure 3 Typical Drain to Source ON Resistance vs Drain Current
Figure 4 Typical Transfer Characteristics
Figure 5 Maximum Effective Thermal Impendance ,
Junction to Case
Figure 6
Body Diode Forward Voltage vs.
Source Current and Temperature
Pag e 4 of 9
W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D .
2 0 1 7 V0 1
CS100N03 B4-1
R
○
Figure 7 Typical Capacitance vs Drain to Source Voltage
Figure 8 Typical Gate Charge vs Gate to Source Voltage
Figure 9 Typical Breakdown Voltage vs Junction Temperature
Figure 10 Typical Drian to Source on Resistance
vs Junction Temperature
Figure 11 Drain-to-Source On Resistance vs Gate Voltage
and Drain Current
Figure 12 Typical Threshold Voltage vs Junction Temperature
W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D .
Pag e 5 of 9
2 0 1 7 V0 1
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