CRTD055N03L
华润微电子(重庆)有限公司
Features
• Uses CRM(CQ) advanced Trench MOS technology
• Extremely low on-resistance R
DS(on)
• Excellent Q
g
xR
DS(on)
product(FOM)
• Qualified according to JEDEC criteria
Applications
• Motor control and drive
• Battery management
• UPS (Uninterrupible Power Supplies)
Trench N-MOSFET 30V, 4.3mΩ, 58A
Product Summary
V
DS
R
DS(on) typ.
I
D
30V
4.3mΩ
58A
100% DVDS Tested
100% Avalanche Tested
Package Marking and Ordering Information
Part #
CRTD055N03L
Marking
CRTD055N03L
Package
TO-252
Packing
Reel
Reel Size
N/A
Tape Width
N/A
Qty
2500pcs
Absolute Maximum Ratings
Parameter
Drain-source voltage
Continuous drain current
T
C
= 25°C (Silicon limit)
T
C
= 25°C (Package limit)
T
C
= 100°C (Silicon limit)
Pulsed drain current (T
C
= 25°C, t
p
limited by T
jmax
)
Avalanche energy, single pulse (L=0.3mH, Rg=25Ω)
Gate-Source voltage
Power dissipation (T
C
= 25°C)
Operating junction and storage temperature
Soldering temperature, wave soldering only allowed at leads
(1.6mm from case for 10s)
I
D pulse
E
AS
V
GS
P
tot
T
j
,
T
stg
T
sold
I
D
92
58
58
232
48
±20
80
-55...+150
260
A
mJ
V
W
°C
°C
A
Symbol
V
DS
Value
30
Unit
V
©China Resources Microelectronics (Chongqing) Limited
Page 1
CRTD055N03L
华润微电子(重庆)有限公司
Thermal Resistance
Parameter
Thermal resistance, junction – case.
Thermal resistance, junction – ambient(min. footprint)
Symbol
R
thJC
R
thJA
*
Max
1.56
105
Unit
°C/W
Trench N-MOSFET 30V, 4.3mΩ, 58A
Electrical Characteristic
(at Tj = 25 °C, unless otherwise specified)
Parameter
Symbol
Value
min.
typ.
max.
Unit
Test Condition
Static Characteristic
Drain-source breakdown
voltage
Gate threshold voltage
BV
DSS
V
GS(th )
30
0.8
-
1.3
-
2
V
V
V
GS
=0V, I
D
=250uA
V
DS
=V
GS
,I
D
=250uA
V
DS
=30V,V
GS
=0V
Zero gate voltage drain
current
Gate-source leakage
current
I
DSS
-
-
I
GSS
-
0.01
-
±5
1
50
±100
nA
µA
T
j
=25°C
T
j
=150°C
V
GS
=±20V,V
DS
=0V
V
GS
=10V, I
D
=25A,
Drain-source on-state
resistance
R
DS(on)
-
-
-
Transconductance
g
fs
-
4.3
7.2
5.4
82
5.5
9.1
6.5
-
S
mΩ
T
j
=25°C
T
j
=150°C
V
GS
=4.5V, I
D
=20A,
V
DS
=5V,I
D
=25A
Dynamic Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Gate Total Charge
Gate-Source charge
Gate-Drain charge
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Gate resistance
C
iss
C
oss
C
rss
Q
G
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
R
G
-
-
-
-
-
-
-
-
-
-
-
2212
312
195
47
8
9
12
97
39
107
1.3
-
-
-
-
-
-
-
-
-
-
-
Ω
V
GS
=0V, V
DS
=0V,
f=1MHz
Page 2
ns
V
GS
=10V, V
DD
=15V,
R
G_ext
=2.7Ω,ID=25A
nC
V
GS
=10V, V
DS
=15V,
I
D
=25A, f=1MHz
pF
V
GS
=0V, V
DS
=15V,
f=1MHz
©China Resources Microelectronics (Chongqing) Limited
CRTD055N03L
华润微电子(重庆)有限公司
Body Diode Characteristic
Parameter
Body Diode Forward
Voltage
Body Diode Forward
Current
Body Diode Reverse
Recovery Time
Body Diode Reverse
Recovery Charge
Symbol
Trench N-MOSFET 30V, 4.3mΩ, 58A
Value
min.
-
typ.
0.8
max.
1.3
58
-
-
21
14
-
-
Unit
V
A
ns
nC
Test Condition
V
GS
=0V,I
SD
=25A
T
C
= 25°C
V
SD
I
S
t
rr
Q
rr
I
F
=25A, dI/dt=100A/µ
s
*The value of R
thJA
is measured by placing the device in a still air box which is one cubic foot.
©China Resources Microelectronics (Chongqing) Limited
Page 3
CRTD055N03L
华润微电子(重庆)有限公司
Trench N-MOSFET 30V, 4.3mΩ, 58A
Typical Performance Characteristics
Fig 1: Output Characteristics
250
250
Fig 2: Transfer Characteristics
10V
7.0V
200
T
j
=25°C
4.5V
200
V
DS
=5V
I
D
(A)
3.5V
100
I
D
(A)
150
150
100
150°C
50
Vgs=3.0V
50
25°C
0
5
1
2
3
4
5
6
0
0
1
2
3
4
V
DS
(V)
V
GS
(V)
Fig 3: Rds(on) vs Drain Current and
Gate Voltage
8
Fig 4: Rds(on) vs Gate Voltage
22
T
j
=25°C
7
I
D
=25A
18
R
DS(on)
(mΩ)
R
DS(on)
(mΩ)
V
GS
=4V
6
14
5
V
GS
=7V
V
GS
=10V
10
150°C
4
6
25°C
3
0
30
60
90
120
150
2
2
3
4
5
6
7
8
9
10
I
D
(A)
V
GS
(V)
Fig 5: Rds(on) vs. Temperature
2.0
1.8
Fig 6: Capacitance Characteristics
10000
V
GS
=10V
I
D
=25A
C - Capacitance (PF)
R
DS(on)
_Normalized
1.6
1.4
1.2
1.0
0.8
0.6
0.4
-50
-25
0
25
50
75
100
125
150
V
GS
=0V
f=1MHz
Ciss
1000
Coss
Crss
100
0
6
12
18
24
30
Tj - Junction Temperature (°C)
V
DS
(V)
©China Resources Microelectronics (Chongqing) Limited
Page 4
CRTD055N03L
华润微电子(重庆)有限公司
Trench N-MOSFET 30V, 4.3mΩ, 58A
Fig 8: Body-diode Forward
Characteristics
Fig 7: Gate Charge Characteristics
10
1000
8
I
S
- Diode Current(A)
100
V
GS
(V)
150˚C
10
6
4
V
DS
=15V
I
D
=25A
25˚C
1
2
0
0
10
20
30
40
50
0.1
0.4
0.6
0.8
1
1.2
1.4
1.6
Qg (nC)
V
SD
- Diode Forward Voltage(V)
Fig 9: Power Dissipation
90
80
70
60
Fig 10: Drain Current Derating
70
60
50
P
tot
(W)
I
D
(A)
50
40
30
20
10
0
0
25
50
75
100
125
150
40
30
20
10
0
0
25
50
75
100
125
150
175
V
GS
≥10V
Tc - Case Temperature (°C)
Tc - Case Temperature (°C)
Fig 11: Safe Operating Area
1000
100
Limited by
Rds(on)
1us
10us
100us
I
D
(A)
10
1ms
10ms
1
DC
Single pulse
Tc=25˚C
0.1
0.1
1
10
100
V
DS
(V)
©China Resources Microelectronics (Chongqing) Limited
Page 5
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