Silicon
N-Channel
Power MOSFET
R
○
CS13N03 AE
General Description
：
CS13N03
AE,
the
silicon
N-channel
Enhanced
V
DSS
I
D
R
DS(ON)Typ
30
13
8.3
V
A
mΩ
VDMOSFETs, is obtained by advanced Trench Technology
which reduce the conduction loss, improve switching
performance and enhance the avalanche energy. The transistor can
be used in various power switching circuit for system
miniaturization and higher efficiency. The package form is SOP8
which accords with the RoHS standard.
Features：
l
Fast Switching
l
Low ON Resistance
(Rdson≤10mΩ)
l
Low Gate Charge
l
Low Reverse transfer capacitances
l
100% Single Pulse avalanche energy Test
Applications
：
Power switch circuit of adaptor and charger.
Absolute
（Ta=
25℃ unless otherwise specified）
：
Symbol
V
DSS
I
D
I
DM
P
D
a1
Parameter
Drain-to-Source Voltage
Continuous Drain Current
Continuous Drain Current Ta = 100
°C
Pulsed Drain Current
Power Dissipation
Gate-to-Source Voltage
Rating
30
13
8.4
52
2.5
±20
64.8
150，–55 to 150
Units
V
A
A
A
W
V
mJ
℃
V
GS
E
AS
a2
Single Pulse Avalanche Energy
Operating Junction and Storage Temperature Range
T
J
，T
stg
W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D .
Pag e 1 of 1 0
2 0 2 0 V0 1
CS13N03 AE
Electrical Characteristics
（Tj=
25℃ unless otherwise specified）
：
OFF Characteristics
Symbol
V
DSS
I
DSS
I
GSS(F)
I
GSS(R)
Parameter
Drain to Source Breakdown Voltage
Drain to Source Leakage Current
Gate to Source Forward Leakage
Gate to Source Reverse Leakage
R
○
Test Conditions
V
GS
=0V, I
D
=250µA
V
DS
=30V, V
GS
= 0V,
T
j
= 25℃
V
DS
=24V, V
GS
= 0V,
T
j
= 125℃
V
GS
=+20V
V
GS
=-20V
Rating
Min.
Typ.
Max.
Units
V
µA
µA
nA
nA
30
--
--
--
--
--
--
--
--
--
--
1
500
100
-100
ON Characteristics
Symbol
R
DS(ON)
V
GS(TH)
Parameter
Drain-to-Source On-Resistance
V
GS
=4.5V,I
D
=10A
Test Conditions
V
GS
=10V,I
D
=10A
Rating
Min.
Typ.
Max.
Units
mΩ
mΩ
V
--
--
1
8.3
10
--
10
12.5
2
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= 250µA
Pulse width tp≤300µs,δ≤2%
Dynamic Characteristics
Symbol
R
g
C
iss
C
oss
C
rss
Parameter
Gate resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V
GS
=0V，V
DS
=15V
f=1.0MHz
Test Conditions
f = 1.0MHz
Rating
Min.
Typ.
Max.
Units
Ω
pF
--
--
--
--
2.3
1157
166
121
--
--
--
--
Resistive Switching Characteristics
Symbol
t
d(ON)
tr
t
d(OFF)
t
f
Q
g
Q
gs
Q
gd
Parameter
Turn-on Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain (“Miller”)Charge
V
GS
=10V，V
DD
=24V
I
D
=7A
V
GS
=10V，R
G
=6Ω
V
DD
=15V，I
D
=7A
Test Conditions
Rating
Min.
Typ.
Max.
Units
--
--
--
--
--
--
--
9
3.7
42.8
4.5
23.7
3.6
5.2
--
--
--
--
--
--
--
nC
ns
W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D .
Pag e 2 of 1 0
2 0 2 0 V0 1
CS13N03 AE
Source-Drain Diode Characteristics
Symbol
I
S
I
SM
V
SD
trr
Qrr
Parameter
Continuous Source Current (Body Diode)
TC= 25℃
R
○
Test Conditions
Rating
Min.
Typ.
Max.
Units
A
A
V
ns
nC
--
--
I
S
=10A,V
GS
=0V
I
S
=7A,T
j
= 25℃
dI
F
/dt=100A/us,
V
GS
=0V
--
--
--
20.9
7.9
13
52
1.3
--
--
Maximum Pulsed Current (Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
--
--
--
Pulse width tp≤300µs,δ≤2%
Symbol
R
θ
JA
a1
a2
Parameter
Junction-to-Ambient
Max.
50
Units
℃/W
：Repetitive
rating; pulse width limited by maximum junction temperature
：L=0.5mH,
I
D
=16.1A, Start T
J
=25℃
a3
：Recommend
soldering temperature defined by IPC/JEDEC J-STD 020
W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D .
Pag e 3 of 1 0
2 0 2 0 V0 1
CS13N03 AE
Characteristics Curve:
100
3
R
○
10μ
s
2.5
10
P
D
,Power Dissipation,W
I
D
,Drain Current,A
2
100μ
s
1
Operation in This Area
is Limited by R
DS(on)
1.5
1ms
10ms
1
0.1
DC
0.5
SINGLE PULSE
T
C
=25℃
T
J
=150℃
0.01
0
1
10
100
0
25
50
75
100
125
150
T
C
,Case Temperature,℃
0.1
V
D S
,Drain-to-Source Voltage,V
Figure 1
. Maximum Safe Operating Area
40
Figure 2. Maximum Power Dissipation vs
Case Temperature
Vgs=4.0V~10V
35
Note:
1.250us Pulse Test
2.Tc=25℃
14
12
30
10
Vgs=3.0V
I
D
,Drain Current,A
8
I
D
,Drain Current[A]
25
20
15
10
5
0
Vgs=2.5V
6
4
2
Vgs=2.0V
0
25
50
75
100
125
150
0
0.5
1
1.5
2
T
C
,Case Temperature,℃
V
DS
,Drain-to-Source Voltage[V]
Figure 3. Maximum Continuous Drain Current
vs Case Temperature
Figure 4. Typical output Characteristics
100
D=1
0.5
Z
θJA
,Thermal Response[℃/W]
10
0.2
0.1
0.05
1
0.02
0.01
0.1
Single Pulse
0.01
0.000001
0.00001
0.0001
0.001
0.01
0.1
1
10
T , Rectangular Pulse Duration [sec]
Figure 5 Maximum Effective Thermal Impedance , Junction to Ambient
W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D .
Pag e 4 of 1 0
2 0 2 0 V0 1
CS13N03 AE
100
Note:
1.V
DS
=5V
2.250us Pulse Test
R
○
100
I
D
,Drain Current[A]
Tj=150℃
Tj=25℃
1
Is,Source Current[A]
10
10
Tj=150℃
Tj=25℃
1
0.1
0.1
0.01
0.5
1
1.5
2
2.5
3
3.5
0
0.2
0.4
0.6
0.8
1
1.2
V
GS
,Gate-to-Source Voltage[V]
V
SD
，Source-to-Drain
Voltage[V]
Figure 6 Typical Transfer Characteristics
Figure 7 Typical Body Diode Transfer
Characteristics
2
16.0
R
DS(on),
Drain-to-Source On Resistance,mΩ
14.0
12.0
PULSED TEST
T
j
= 25℃
1.8
PULSED TEST
I
D
= 10A
R
DS(on)
,(Normalized)
Drain-to-Source On Resistance
1.6
VGS=10V
1.4
1.2
1
0.8
0.6
0.4
0.2
0
VGS=4.5V
V
GS
= 4.5V
10.0
8.0
V
GS
= 10V
6.0
4.0
2.0
0.0
0.0
5.0
10.0
15.0
I
D
,Drain Current,A
-50
0
50
100
150
T
J
,Junction Temperature(℃ )
Figure 8. Drain-to-Source On Resistance vs
Drain Current
1.3
1.2
1.1
V
GS
= V
DS
I
D
= 250μA
Figure 9. Normalized On Resistance vs
Junction Temperature
1.1
1.08
B
VDSS
,(Normalized)
Drain-to-Source Breakdown Voltage
1.06
1.04
1.02
1
0.98
0.96
0.94
0.92
V
GS(th)
,(Normalized)
Threshold Voltage
1
0.9
0.8
0.7
0.6
0.5
0.4
-50
0
50
100
150
T
J
,Junction Temperature(℃ )
-50
0
50
100
150
T
J
,Junction Temperature(℃ )
Figure10. Normalized Threshold Voltage vs
Junction Temperature
Figure 11. Normalized Breakdown Voltage vs
Junction Temperature
W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D .
Pag e 5 of 1 0
2 0 2 0 V0 1
stm32/stm8
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