CRSM010N04L2
华润微电子(重庆)有限公司
Features
• Uses CRM(CQ) advanced SkyMOS2 technology
• Extremely low on-resistance R
DS(on)
• Excellent Q
g
xR
DS(on)
product(FOM)
• Qualified according to JEDEC criteria
Applications
• DC Motor Drive
• Synchronous Rectification for AC/DC Quick Charger
• Battery management
• UPS (Uninterrupible Power Supplies)
V
DS
R
DS(on)@10V typ
I
D
SkyMOS2 N-MOSFET 40V, 0.9mΩ, 100A
Product Summary
40V
0.9mΩ
100A
100% Avalanche Tested
100% DVDS Tested
Package Marking and Ordering Information
Part #
CRSM010N04L2
Marking
010N04L2
Package
Packing
Reel Size
N/A
Tape Width
N/A
Qty
-
DFN5X6 clip Tape&Reel
Absolute Maximum Ratings
Parameter
Drain-source voltage
Continuous drain current
T
C
= 25°C (silicon limit)
T
C
= 25°C (package limit)
T
C
= 100°C (silicon limit)
Pulsed drain current (T
C
= 25°C, t
p
limited by T
jmax
)
Avalanche energy, single pulse (I
D
=39A, Rg=25Ω)
Gate-Source voltage
Power dissipation (T
C
= 25°C)
Operating junction and storage temperature
Maximum lead temperature for soldering, 1.6mm from case for
10s
I
D
270
100
171
400
384
±20
147
-55...+150
260
A
Symbol
V
DS
Value
40
Unit
V
I
D pulse
E
AS
V
GS
P
tot
T
j
,
T
stg
Tsold
A
mJ
V
W
°C
°C
©China Resources Microelectronics (Chongqing) Limited
Page 1
CRSM010N04L2
华润微电子(重庆)有限公司
Thermal Resistance
Parameter
Thermal resistance,
junction – case.
Thermal resistance,
junction - ambient(min.
footprint)
Symbol
RthJC
Value
min.
-
typ.
0.5
max.
0.85
Unit
°C/W
Test Condition
-
SkyMOS2 N-MOSFET 40V, 0.9mΩ, 100A
RthJA
-
-
55
°C/W
-
Electrical Characteristic
(at Tj = 25 °C, unless otherwise specified)
Parameter
Symbol
Value
min.
typ.
max.
Unit
Test Condition
Static Characteristic
Drain-source breakdown
voltage
Gate threshold voltage
Zero gate voltage drain
current
Gate-source leakage
current
Drain-source on-state
resistance
BV
DSS
V
GS(th )
I
DSS
40
1.4
-
-
I
GSS
R
DS(on)
-
-
Transconductance
g
fs
-
-
1.8
-
-
-
0.9
1.3
181.2
-
2.2
1
100
±100
1.1
1.6
-
nA
mΩ
mΩ
S
V
V
V
GS
=0V, I
D
=250uA
V
DS
=V
GS
,I
D
=250uA
V
DS
=40V,V
GS
=0V
µA
T
j
=25°C
T
j
=125°C
V
GS
=±20V,V
DS
=0V
VGS=10V,I
D
=40A
VGS=4.5V,I
D
=32A
V
DS
=5V,I
D
=40A
Dynamic Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Gate Total Charge
Gate-Source charge
Gate-Drain charge
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Gate resistance
C
iss
C
oss
C
rss
Q
G
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
R
G
-
-
-
-
-
-
-
-
-
-
-
5307
3113
143
87.1
17
14.8
15
84.3
50.7
111
0.57
7960.5
4669.5
286.0
130.7
25.5
29.60
-
-
-
-
0.86
Ω
V
GS
=0V, V
DS
=0V,
f=1MHz
ns
V
GS
=10V, V
DD
=20V,
R
G_ext
=2.7Ω
nC
V
GS
=10V, V
DS
=20V,
I
D
=40A, f=1MHz
pF
V
GS
=0V, V
DS
=20V,
f=1MHz
©China Resources Microelectronics (Chongqing) Limited
Page 2
CRSM010N04L2
华润微电子(重庆)有限公司
SkyMOS2 N-MOSFET 40V, 0.9mΩ, 100A
Body Diode Characteristic
Parameter
Body Diode Forward
Voltage
Body Diode Continuous
Forward Current
Body Diode Pulsed Current
Body Diode Reverse
Recovery Time
Body Diode Reverse
Recovery Charge
Symbol
Value
min.
-
-
-
-
-
typ.
0.78
-
-
148.5
422.4
max.
1.4
100
400
297
844.8
Unit
V
A
A
ns
nC
Test Condition
V
GS
=0V,I
SD
=40A
TC = 25°C
TC = 25°C
V
SD
I
S
I
S
pulse
t
rr
Q
rr
I
F
=40A, dI/dt=200A/µ
s
©China Resources Microelectronics (Chongqing) Limited
Page 3
CRSM010N04L2
华润微电子(重庆)有限公司
SkyMOS2 N-MOSFET 40V, 0.9mΩ, 100A
Typical Performance Characteristics
3.5V
Fig 1: Output Characteristics
240
250
Fig 2: Transfer Characteristics
V
DS
=5V
10V 4.5V
200
3.5V
160
200
I
D
(A)
120
I
D
(A)
150
100
80
50
150°C
25°C
40
2.5V
0
0
1
2
3
4
5
0
1
2
V
DS
(V)
3
V
GS
(V)
4
5
Fig 3: Rds(on) vs Drain Current and
Gate Voltage
2.0
1.8
1.6
Fig 4: Rds(on) vs Gate Voltage
4
I
D
=40A
R
DS(on)
(m )
R
DS(on)
(m )
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0
10
20
V
GS
=4.5V
V
GS
=10V
3
2
150°C
1
25°C
0
30
40
50
60
70
80
90
100
2
3
4
5
6
7
8
9
10
I
D
(A)
V
GS
(V)
Fig 5: Rds(on) vs. Temperature
2.0
Fig 6: Capacitance Characteristics
10000
Ciss
C - Capacitance (PF)
1.8
R
DS(on)
_Normalized
1.6
V
GS
=10V
I
D
=40A
V
GS
=4.5V
I
D
=32A
Coss
1000
1.4
1.2
100
Crss
V
GS
=0V
f=1MHz
1.0
10
25
50
75
100
125
150
0
0.8
5
10
15
20
25
30
35
40
Tj - Junction Temperature (°C)
V
DS
(V)
©China Resources Microelectronics (Chongqing) Limited
Page 4
CRSM010N04L2
华润微电子(重庆)有限公司
SkyMOS2 N-MOSFET 40V, 0.9mΩ, 100A
Fig 8: Body-diode Forward Characteristics
100
Fig 7: Gate Charge Characteristics
10
8
I
S
- Diode Current(A)
V
DS
=20V
I
D
=40A
V
GS
(V)
6
10
150˚C
25˚C
1
4
2
0
0
10
20
30
40
50
60
70
80
90
100
0.1
0
0.2
0.4
0.6
0.8
1
Qg (nC)
V
SD
- Diode Forward Voltage(V)
Fig 9: Power Dissipation
160
140
120
Fig 10: Drain Current Derating
120
100
P
tot
(W)
I
D
(A)
100
80
60
40
20
0
0
25
50
75
100
125
150
80
60
40
V
GS
≥10V
20
0
0
25
50
75
100
125
150
175
Tc - Case Temperature (°C)
Tc - Case Temperature (°C)
Fig 11: Safe Operating Area
1us
1000
Limited by
Rds(on)
100
10us
100us
I
D
(A)
1ms
10
10ms
DC
1
Single pulse
Tc=25˚C
0.1
0.1
1
10
V
DS
(V)
©China Resources Microelectronics (Chongqing) Limited
Page 5
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