CRSM062N08N
华润微电子(重庆)有限公司
Features
• Uses CRM(CQ) advanced SkyMOS1 technology
• Extremely low on-resistance R
DS(on)
• Excellent Q
g
xR
DS(on)
product(FOM)
• Qualified according to JEDEC criteria
Applications
• Synchronous Rectification for AC/DC Quick Charger
• Battery management
• UPS (Uninterrupible Power Supplies)
V
DS
R
DS(on)@10V typ
I
D
SkyMOS1 N-MOSFET 85V, 5.2mΩ, 80A
Product Summary
85V
5.2mΩ
80A
100% Avalanche Tested
CRSM062N08N
Package Marking and Ordering Information
Part #
CRSM062N08N
Marking
Package
DFN5
X
6
Packing
Tape&Reel
Reel Size
N/A
Tape Width
N/A
Qty
5000pcs
-
Absolute Maximum Ratings
Parameter
Drain-source voltage
Continuous drain current
T
c
= 25°C (Silicon Limit)
T
c
= 25°C (Package Limit)
T
c
= 100°C (Slicon Limit)
Pulsed drain current (T
A
= 25°C, t
p
limited by T
jmax
)
Avalanche energy, single pulse (L=0.5mH, Rg=25Ω)
Gate-Source voltage
Power dissipation (T
A
= 25°C )
Operating junction and storage temperature
I
D pulse
E
AS
V
GS
P
tot
T
j
,
T
stg
I
D
86
80
55
344
121
±20
79.1
-55...+150
A
mJ
V
W
°C
A
Symbol
V
DS
Value
85
Unit
V
※.
Notes:1.EAS is tested at starting Tj = 25℃, L = 0.5mH, IAS = 22A, VGS = 10V. IAS(max)=44A;EAS(max)=484mJ under
℃
above Conditions;
©China Resources Microelectronics (Chongqing) Limited
Page 1
CRSM062N08N
华润微电子(重庆)有限公司
Thermal Resistance
Parameter
Thermal resistance, junction – case.
Thermal resistance, junction – ambient(min. footprint)
Symbol
R
thJC
R
thJA
Max
1.58
47.0
Unit
°C/W
SkyMOS1 N-MOSFET 85V, 5.2mΩ, 80A
Electrical Characteristic
(at Tj = 25 °C, unless otherwise specified)
Parameter
Symbol
Value
min.
typ.
max.
Unit
Test Condition
Static Characteristic
Drain-source breakdown
voltage
Gate threshold voltage
BV
DSS
V
GS(th )
85
2.0
97
3.0
-
4.0
V
V
V
GS
=0V, I
D
=250uA
V
DS
=V
GS
,I
D
=250uA
V
DS
=85V,V
GS
=0V
Zero gate voltage drain
current
Gate-source leakage
current
Drain-source on-state
resistance
Transconductance
I
DSS
-
-
I
GSS
R
DS(on)
g
fs
-
-
-
0.05
-
10
5.2
89.7
1
10
±100
6.2
-
nA
mΩ
S
µA
T
j
=25°C
T
j
=125°C
V
GS
=±20V,V
DS
=0V
V
GS
=10V, I
D
=50A
V
DS
=5V,I
D
=50A
Dynamic Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Gate Total Charge
Gate-Source charge
Gate-Drain charge
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Gate resistance
C
iss
C
oss
C
rss
Q
G
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
R
G
-
-
-
-
-
-
-
-
-
-
-
2990
790
19
55.5
17.6
13
16.0
31.0
36.0
19.0
2.2
-
-
-
-
-
-
-
-
-
-
-
Ω
V
GS
=0V, V
DS
=0V,
f=1MHz
ns
V
GS
=10V,V
DD
=42.5V
R
G_ext
=3.5Ω
(Note 2,3)
nC
V
GS
=10V,VDS=42.5V,
ID=50A, f=1MHz
pF
V
GS
=0V, V
DS
=42.5V,
f=1MHz
Body Diode Characteristic
©China Resources Microelectronics (Chongqing) Limited
Page 2
CRSM062N08N
华润微电子(重庆)有限公司
Value
min.
-
-
-
typ.
0.9
78
99
max.
1
-
-
SkyMOS1 N-MOSFET 85V, 5.2mΩ, 80A
Parameter
Body Diode Forward
Voltage
Body Diode Reverse
Recovery Time
Body Diode Reverse
Recovery Charge
Symbol
Unit
V
ns
Test Condition
V
GS
=0V,I
SD
=50A
V
SD
t
rr
Q
rr
I
F
=50A, dI/dt=300A/µs,
nC
※.
Notes
2.Pulse Test : Pulse Width ≤ 300us, duty cycle ≤ 2%.
3.Essentially independent of operating temperature.
©China Resources Microelectronics (Chongqing) Limited
Page 3
CRSM062N08N
华润微电子(重庆)有限公司
SkyMOS1 N-MOSFET 85V, 5.2mΩ, 80A
Typical Performance Characteristics
Fig 1: Output Characteristics
240
220
200
180
160
200
Fig 2: Transfer Characteristics
180
10V
9V
8V
7V
6.5V
I
D
(A)
V
DS
=5V
160
140
120
100
80
I
D
(A)
140
120
100
80
60
40
20
0
0
1
2
3
4
5
6V
5.5V
5V
125°C
25°C
60
40
20
0
0
1
2
3
4
5
6
7
8
V
DS
(V)
V
GS
(V)
Fig 3: Rds(on) vs Drain Current and
Gate Voltage
8.0
7.0
Fig 4: Rds(on) vs Gate Voltage
30
28
26
24
22
20
18
16
14
12
10
8
6
4
2
I
D
=50A
R
DS(on)
(m )
6.0
5.0
R
DS(on)
(m )
125°C
V
GS
=10V
4.0
3.0
25°C
2
4
6
8
10
2.0
5
10
15
20
25
30
35
40
45
50
I
D
(A)
V
GS
(V)
Fig 5: Rds(on) vs. Temperature
1.8
1.7
1.6
Fig 6: Capacitance Characteristics
10000
1.5
1.4
1.3
1.2
1.1
1.0
0.9
0.8
25
50
75
100
125
150
C - Capacitance (PF)
V
GS
=10V
I
D
=50A
Ciss
1000
R
DS(on)
_Normalized
Coss
100
V
GS
=0V
f=1MHz
Crss
10
0
10
20
30
40
50
60
70
80
Tj - Junction Temperature (°C)
V
DS
(V)
©China Resources Microelectronics (Chongqing) Limited
Page 4
CRSM062N08N
华润微电子(重庆)有限公司
SkyMOS1 N-MOSFET 85V, 5.2mΩ, 80A
Fig 8: Body-diode Forward
Characteristics
Fig 7: Gate Charge Characteristics
10
8
I
S
- Diode Current(A)
V
DS
=40V
I
D
=50A
V
GS
(V)
125˚C
50
6
25˚C
4
2
0
0
10
20
30
40
50
60
5
0.5
0.7
0.9
1.1
1.3
Qg (nC)
V
SD
- Diode Forward Voltage(V)
Fig 9: Power Dissipation
100
90
80
70
Fig 10: Drain Current Derating
90
80
70
60
P
tot
(W)
60
50
40
30
20
10
0
0
25
50
75
100
125
150
I
D
(A)
50
40
30
20
10
0
0
25
50
75
100
125
150
175
V
GS
≥10V
T
A
- Case Temperature (°C)
T
A
- Case Temperature (°C)
Fig 11: Safe Operating Area
1000
Limited by
Rds(on)
1us
10us
100
100us
I
D
(A)
10
1ms
10ms
1
Single pulse
Tc=25˚C
0.1
0.1
1
10
DC
100
V
DS
(V)
©China Resources Microelectronics (Chongqing) Limited
Page 5
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