Silicon N-Channel Power MOSFET
R
○
CS8N25F A9R
General Description
：
CS8N25F
A9R,
the
silicon
N-channel
Enhanced
VDMOSFETs, is obtained by the self-aligned planar Technology
which reduce the conduction loss, improve switching
performance and enhance the avalanche energy. The transistor
can be used in various power switching circuit for system
miniaturization and higher efficiency. The package form is
TO-220F, which accords with the RoHS standard.
V
DSS
I
D
P
D
(T
C
=25℃)
R
DS(ON)Typ
250
8
30
0.36
V
A
W
Ω
Features：
Fast Switching
Low ON Resistance(
Rdson≤0.47Ω
)
Low Gate Charge
(
Typical Data: 12.8nC
)
Low Reverse transfer capacitances
(Typical: 7.9pF)
100% Single Pulse avalanche energy Test
Applications
：
Automotive、DC Motor Control and Class D Amplifier.
Absolute
（Tc=
25℃ unless otherwise specified）
：
Symbol
V
DSS
I
D
I
DM
V
GS
E
AS
I
AS
a1
Parameter
Drain-to-Source Voltage
Continuous Drain Current
Continuous Drain Current T
C
= 100 °
C
Pulsed Drain Current
Gate-to-Source Voltage
Rating
250
8
5
32
±30
205
6.4
5.0
30
0.24
150，–55 to 150
300
Units
V
A
A
A
V
mJ
A
V/ns
W
W/℃
℃
℃
a2
Single Pulse Avalanche Energy
Avalanche Current
a1
a3
dv/dt
P
D
Peak Diode Recovery dv/dt
Power Dissipation
Derating Factor above 25°
C
Operating Junction and Storage Temperature Range
Maximum Temperature for Soldering
T
J
，T
stg
T
L
W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D .
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2 02 0 V0 1
CS8N25F A9R
Electrical Characteristics
（Tc=
25℃ unless otherwise specified）
：
OFF Characteristics
Symbol
V
DSS
ΔBV
DSS
/ΔT
J
I
DSS
I
GSS(F)
I
GSS(R)
Parameter
Drain to Source Breakdown Voltage
Bvdss Temperature Coefficient
R
○
Test Conditions
V
GS
=0V, I
D
=250µA
ID=250uA,Reference25℃
V
DS
= 250V, V
GS
= 0V,
T
a
= 25℃
V
DS
=200V, V
GS
= 0V,
T
a
= 125℃
Rating
Min.
Typ.
Max.
Units
V
V/℃
250
--
--
--
--
--
--
0.30
--
--
--
--
--
--
1
Drain to Source Leakage Current
µA
100
100
-100
nA
nA
Gate to Source Forward Leakage
Gate to Source Reverse Leakage
V
GS
=+30V
V
GS
=-30V
ON Characteristics
Symbol
R
DS(ON)
V
GS(TH)
Parameter
Drain-to-Source On-Resistance
Gate Threshold Voltage
Test Conditions
V
GS
=10V,I
D
=4A
V
DS
= V
GS
, I
D
= 250µA
Rating
Min.
Typ.
Max.
Units
Ω
V
--
2.0
0.36
0.47
4.0
Pulse width tp≤300µs,δ≤2%
Dynamic Characteristics
Symbol
g
fs
R
g
C
iss
C
oss
C
rss
Parameter
Forward Trans conductance
Gate resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V
GS
= 0V V
DS
= 25V
f = 1.0MHz
Test Conditions
V
DS
=15V, I
D
=8A
f = 1.0MHz
Rating
Min.
Typ.
Max.
Units
S
Ω
--
--
--
--
5.2
2.5
557.9
83.1
7.9
--
--
--
--
pF
Resistive Switching Characteristics
Symbol
t
d(ON)
tr
t
d(OFF)
t
f
Q
g
Q
gs
Q
gd
Parameter
Turn-on Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain (“Miller”)Charge
I
D
=8A V
DD
=200V
V
GS
= 10V
I
D
=8A
V
DD
= 125V
V
GS
= 10V R
G
=12Ω
Test Conditions
Rating
Min.
Typ.
Max.
Units
--
--
--
--
--
--
--
11.6
4
20.3
4.5
12.8
3.1
6.1
--
--
--
--
--
--
nC
ns
W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D .
Page 2 of 10
2 0 2 0 V0 1
CS8N25F A9R
R
○
Source-Drain Diode Characteristics
Symbol
I
S
I
SM
V
SD
trr
Qrr
I
RRM
Parameter
Continuous Source Current (Body Diode)
Maximum Pulsed Current (Body Diode)
Diode Forward Voltage
Reverse Recovery Time
I
S
=8A,T
j
= 25°C
I
S
=8A,V
GS
=0V
Test Conditions
Rating
Min.
Typ.
Max.
Units
A
A
V
ns
nC
--
--
--
--
--
--
--
--
--
146
758
9.5
8
32
1.5
Reverse Recovery Charge
Reverse Recovery Current
dI
F
/dt=100A/us,
V
GS
=0V
--
A
Pulse width tp≤300µs,δ≤2%
Symbol
R
θ
JC
R
θ
JA
a1
a2
Parameter
Junction-to-Case
Junction-to-Ambient
Max.
4.17
62.5
Units
℃/W
℃/W
：Repetitive
rating; pulse width limited by maximum junction temperature
：L=10.0mH,
I
D
=6.4A, Start T
J
=25℃
a3
：I
SD
=8A,di/dt
≤100A/us,V
DD
≤BV
DS,
Start T
J
=25℃
W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D .
Page 3 of 10
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CS8N25F A9R
Characteristics Curve：
R
○
Figure 1 Maximum Forward Bias Safe Operating Area
Figure 2 Maximum Power dissipation vs Case Temperature
Figure 3 Maximum Continuous Drain Current vs Case Temperature
Figure 4 Typical Output Characteristics
Figure 5 Maximum Effective Thermal Impedance , Junction to Case
W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D .
Page 4 of 10
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CS8N25F A9R
R
○
Figure 6 Typical Transfer Characteristics
Figure 7 Typical Body Diode Transfer Characteristics
Figure 8 Typical Drain to Source ON Resistance
vs Drain Current
Figure 9 Typical Drian to Source on Resistance
vs Junction Temperature
W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D .
Page 5 of 10
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