CRTS030N04L
华润微电子(重庆)有限公司
Features
• Uses CRM(CQ) advanced Trench technology
• Extremely low on-resistance R
DS(on)
• Excellent Q
g
xR
DS(on)
product(FOM)
• Qualified according to JEDEC criteria
Applications
• Motor control and drive
• Battery management
• UPS (Uninterrupible Power Supplies)
Trench N-MOSFET 40V, 2.8mΩ, 80A
Product Summary
V
DS
R
DS(on) typ.
I
D
40V
2.8mΩ
80A
100% DVDS Tested
100% Avalanche Tested
Package Marking and Ordering Information
Part #
CRTS030N04L
Marking
CRTS030N04L
Package
TO-263
Packing
Reel
Reel Size
N/A
Tape Width
N/A
Qty
1000pcs
Absolute Maximum Ratings
Parameter
Drain-source voltage
Continuous drain current
T
C
= 25°C (Silicon limit)
T
C
= 25°C (Package limit)
T
C
= 100°C (Silicon limit)
Pulsed drain current (T
C
= 25°C, t
p
limited by T
jmax
)
Avalanche energy, single pulse (L=0.5mH, Rg=50Ω)
Gate-Source voltage
Power dissipation (T
C
= 25°C)
Operating junction and storage temperature
Soldering temperature, wave soldering only allowed at leads
(1.6mm from case for 10s)
I
D pulse
E
AS
V
GS
P
tot
T
j
,
T
stg
T
sold
I
D
164
80
104
320
210
±20
151
-55...+150
260
A
mJ
V
W
°C
°C
A
Symbol
V
DS
Value
40
Unit
V
©China Resources Microelectronics (Chongqing) Limited
Page 1
CRTS030N04L
华润微电子(重庆)有限公司
Thermal Resistance
Parameter
Thermal resistance, junction – case.
Thermal resistance, junction – ambient(min. footprint)
Symbol
R
thJC
R
thJA
*
Max
0.83
91
Unit
°C/W
Trench N-MOSFET 40V, 2.8mΩ, 80A
Electrical Characteristic
(at Tj = 25 °C, unless otherwise specified)
Parameter
Symbol
Value
min.
typ.
max.
Unit
Test Condition
Static Characteristic
Drain-source breakdown
voltage
Gate threshold voltage
BV
DSS
V
GS(th )
40
1.3
-
2
-
2.7
V
V
V
GS
=0V, I
D
=250uA
V
DS
=V
GS
,I
D
=250uA
V
DS
=40V,V
GS
=0V
Zero gate voltage drain
current
Gate-source leakage
current
I
DSS
-
-
I
GSS
-
0.05
-
±10
1
10
±100
nA
µA
T
j
=25°C
T
j
=150°C
V
GS
=±20V,V
DS
=0V
V
GS
=10V, I
D
=40A,
Drain-source on-state
resistance
R
DS(on)
-
-
-
Transconductance
g
fs
-
2.8
4.7
3.4
209
3.3
5.6
4.4
-
S
mΩ
T
j
=25°C
T
j
=150°C
V
GS
=4.5V, I
D
=30A
V
DS
=5V,I
D
=40A
Dynamic Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Gate Total Charge
Gate-Source charge
Gate-Drain charge
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Gate resistance
C
iss
C
oss
C
rss
Q
G
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
R
G
-
-
-
-
-
-
-
-
-
-
-
5734
686
338
126
24
31
20
106
68
112
0.8
-
-
-
-
-
-
-
-
-
-
-
Ω
V
GS
=0V, V
DS
=0V,
f=1MHz
Page 2
ns
V
GS
=10V, V
DD
=20V,
R
G_ext
=2.7Ω
nC
V
GS
=10V, V
DS
=20V,
I
D
=40A, f=1MHz
pF
V
GS
=0V, V
DS
=20V,
f=1MHz
©China Resources Microelectronics (Chongqing) Limited
CRTS030N04L
华润微电子(重庆)有限公司
Body Diode Characteristic
Parameter
Body Diode Forward
Voltage
Body Diode Continuous
Forward Current
Body Diode Reverse
Recovery Time
Body Diode Reverse
Recovery Charge
Symbol
Trench N-MOSFET 40V, 2.8mΩ, 80A
Value
min.
-
typ.
0.9
max.
1.3
80
-
-
29
28
-
-
Unit
V
A
ns
nC
Test Condition
V
GS
=0V,I
SD
=40A
T
C
= 25°C
V
SD
I
S
t
rr
Q
rr
I
F
=40A, dI/dt=100A/µ
s
*The value of R
thJA
is measured by placing the device in a still air box which is one cubic foot.
©China Resources Microelectronics (Chongqing) Limited
Page 3
CRTS030N04L
华润微电子(重庆)有限公司
Trench N-MOSFET 40V, 2.8mΩ, 80A
Typical Performance Characteristics
Fig 1: Output Characteristics
300
300
Fig 2: Transfer Characteristics
4.5V
240
10V
240
6.0V
V
DS
=5V
4.0V
I
D
(A)
I
D
(A)
180
180
120
T
j
=25°C
120
150°C
60
60
V
GS
=3.0V
0
0
1
2
3
4
5
0
1
2
3
25°C
4
5
6
V
DS
(V)
V
GS
(V)
Fig 3: Rds(on) vs Drain Current and
Gate Voltage
6
Fig 4: Rds(on) vs Gate Voltage
20
18
16
5
T
j
=25°C
R
DS(on)
(mΩ)
I
D
=40A
R
DS(on)
(mΩ)
14
12
10
8
6
4
2
4
V
GS
=4V
V
GS
=7V
3
V
GS
=10V
150°C
2
25°C
3
4
5
6
7
8
9
10
1
0
60
120
180
240
300
0
I
D
(A)
V
GS
(V)
Fig 5: Rds(on) vs. Temperature
2.0
1.8
Fig 6: Capacitance Characteristics
100000
R
DS(on)
_Normalized
1.6
1.4
1.2
1.0
0.8
0.6
0.4
-50
-25
0
25
50
75
100
125
150
C - Capacitance (PF)
V
GS
=10V
I
D
=40A
V
GS
=0V
f=1MHz
10000
Ciss
1000
Coss
Crss
100
0
8
16
24
32
40
Tj - Junction Temperature (°C)
V
DS
(V)
©China Resources Microelectronics (Chongqing) Limited
Page 4
CRTS030N04L
华润微电子(重庆)有限公司
Trench N-MOSFET 40V, 2.8mΩ, 80A
Fig 8: Body-diode Forward
Characteristics
Fig 7: Gate Charge Characteristics
10
1000
I
S
- Diode Current(A)
8
100
V
GS
(V)
6
V
DS
=20V
I
D
=40A
10
150˚C
25˚C
4
1
2
0.1
0
0
20
40
60
80
100
120
140
0.01
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
Qg (nC)
V
SD
- Diode Forward Voltage(V)
Fig 9: Power Dissipation
160
140
120
Fig 10: Drain Current Derating
90
80
70
60
P
tot
(W)
I
D
(A)
100
80
60
40
20
0
0
25
50
75
100
125
150
50
40
30
20
10
0
0
25
50
75
100
125
150
175
V
GS
≥10V
Tc - Case Temperature (°C)
Tc - Case Temperature (°C)
Fig 11: Safe Operating Area
1000
1us
10us
100
Limited by
Rds(on)
I
D
(A)
100us
10
1ms
10ms
DC
1
Single pulse
Tc=25˚C
0.1
0.1
1
10
100
V
DS
(V)
©China Resources Microelectronics (Chongqing) Limited
Page 5
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