Silicon
N-Channel
Power
MOSFET
R
○
CS150N04 A8
General Description
：
CS150N04
A8,
the
silicon
N-channel
Enhanced
VDMOSFETs, is obtained by the high density Trench
technology which reduce the conduction loss, improve switching
performance and enhance the avalanche energy. This device is
suitable for use as a load switch and PWM applications. The
package form is TO-220AB, which accords with the RoHS
standard.
V
DSS
I
D
（
Silicon limited current
）
P
D
R
DS(ON)Typ
40
130
125
3.6
V
A
W
mΩ
Features：
l
Fast Switching
l
Low ON Resistance
(Rdson≤5
mΩ)
l
Low Gate Charge
l
Low Reverse transfer capacitances
l
100% Single Pulse avalanche energy Test
Applications
：
Power switch circuit of adaptor and charger.
Absolute
（T
C
= 25℃ unless otherwise specified）
Symbol
V
DSS
I
D
I
DM
V
GS
E
AS
P
D
T
J
，T
stg
T
L
a1
Parameter
Drain-to-Source Voltage
Continuous Drain Current
Continuous Drain Current T
C
= 100
°C
Pulsed Drain Current
Gate-to-Source Voltage
Rating
40
130
83
520
±20
221.1
125
1
150，–55 to 150
300
Units
V
A
A
A
V
mJ
W
W/℃
℃
℃
a2
Avalanche Energy
Power Dissipation
Derating Factor above 25°C
Operating Junction and Storage Temperature Range
MaximumTemperature for Soldering
W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D .
Pag e 1 of 1 0
2 0 1 7 V0 2
CS150N04 A8
Electrical Characteristics
（T
C
= 25
℃
unless otherwise specified）
：
OFF Characteristics
Symbol
V
DSS
I
DSS
I
GSS(F)
I
GSS(R)
Parameter
Drain to Source Breakdown Voltage
Drain to Source Leakage Current
Gate to Source Forward Leakage
Gate to Source Reverse Leakage
R
○
Test Conditions
V
GS
=0V, I
D
=250µA
V
DS
=40V, V
GS
= 0V,
T
a
= 25℃
V
DS
=32V, V
GS
= 0V,
T
a
= 125℃
V
GS
=20V
V
GS
=-20V
Rating
Min.
Typ.
Max.
Units
V
µA
nA
nA
40
--
--
--
--
--
--
--
--
--
--
1
500
100
-100
ON Characteristics
Symbol
R
DS(ON)
V
GS(TH)
Parameter
Drain-to-Source On-Resistance
Gate Threshold Voltage
Test Conditions
V
GS
=10V,I
D
=75A
V
DS
= V
GS
, I
D
= 250µA
Rating
Min.
--
2.0
Typ.
3.6
2.7
Max.
5
4.0
Units
mΩ
V
Pulse width tp≤300µs,δ≤2%
Dynamic Characteristics
Symbol
R
g
C
iss
C
oss
C
rss
Parameter
Gate resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V
GS
= 0V V
DS
=25V
f = 1.0MHz
Test Conditions
V
GS
=0V, V
DS
=0V, f=1MHz
Rating
Min.
--
--
--
--
Typ.
1
8900
550
480
Max.
--
--
--
--
Units
Ω
pF
Resistive Switching Characteristics
Symbol
t
d(ON)
tr
t
d(OFF)
t
f
Q
g
Q
gs
Q
gd
Parameter
Turn-on Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain (“Miller”)Charge
I
D
=20A V
DD
=32V
V
GS
= 10V
V
GS
=10V，R
G
=10Ω
V
DD
=30V，I
D
=75A
Test Conditions
Rating
Min.
--
--
--
--
--
--
--
Typ.
48
88
170
62
160
42
33
Max.
--
--
--
--
--
--
--
Units
ns
nC
W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D .
Pag e 2 of 1 0
2 0 1 7 V0 2
CS150N04 A8
Source-Drain Diode Characteristics
Symbol
I
S
I
SM
V
SD
trr
Qrr
Parameter
Continuous Source Current (Body Diode)
Maximum Pulsed Current (Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
I
S
=75A,V
GS
=0V
di/dt=100A/us
IF=20A
R
○
Test
Conditions
Rating
Min.
--
--
--
--
--
Typ.
--
--
--
84
75
Max.
130
520
1.2
--
--
Units
A
A
V
ns
nC
Pulse width tp≤300µs,δ≤2%
Symbol
R
θ
JC
R
θ
JA
a1
a2
Parameter
Junction-to-Csae
Junction-to-Ambient
Max.
1
62.5
Units
℃/W
℃/W
：Repetitive
rating; pulse width limited by maximum junction temperature
：L=0.1mH,Ias=66.5A
Start T
J
=25℃
W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D .
Page 3 of 9
2 0 1 7 V0 2
CS150N04 A8
Characteristics Curve：
100
100
15V
15V
10V
10V
R
○
100
6V
6V
5.5V
5.5V
ID,Drain Current,[A]
80
80
I
I
D
,Drain Current [A]
D
,Drain Current [A]
Note
：
：
Note
1. 250us Pulse Test
1. 250us Pulse Test
2. Tc =
= 25
℃
2. Tc
25
℃
80
Tj = 150
℃
60
60
5V
5V
60
Tj = 25
℃
40
40
40
4.5V
4.5
4.5
20
20
20
4
4 V
V
0
0
0
0
1
1
0
Note：
1. V
DD
= 5V
2. 250us Pulse
Test
2
2
3
3
2
3
4
5
6
7
V
GS
,Gate-to-Source Voltage [V]
V
DS
,Drain-to-Source Voltage [V]
DS
,Drain-to-Source Voltage [V]
Figure 1. Output Characteristics
40
D
rain-to-Source On Resistance [mΩ
]
Tj = 150
℃
Figure 2.Transfer Characteristics
100
Is, Source Current [A]
30
Tj = 25℃
Tj = 150
℃
10
Tj = 25
℃
20
Note
：
1. V
DD
= 5V
2. 250us Pul s e
Tes t
10
1
Note：
1. Vgs = 0V
2. 250us Pulse Test
0.1
0
2
4
6
8
10
V
GS
,Gate-to-Source Voltage [V]
0.2
0.4
0.6
0.8
1.0
1.2
V
SD
, Source-to-Drain Voltage [V]
Figure 3. Drain-to-Source On Resistance vs Gate
Voltage
100000
f = 1MHz
C
iss
= C
gs
+C
gd
C
oss
= C
ds
+C
gd
Figure 4. Typical Body Diode Transfer Characteristics
10
Vds=32V
8
Vds=20V
6
Capacitance [pF]
10000
C
iss
C
rss
= C
gd
Vgs,Gate-to-Source Voltage[V]
4
1000
C
oss
C
rs
2
100
0
10
20
30
40
V
DS
,Drain-to-Source Voltage [V]
0
0
50
100
150
200
Qg， Total Gate Charge[nC]
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D .
Page 4 of 9
2 0 1 7 V0 2
CS150N04 A8
1.1
2
R
○
B
VDSS
,(Normalized)
Drain-to-Source Breakdown Voltage
1.08
1.06
1.04
1.02
1
0.98
0.96
0.94
0.92
0.9
-75
-25
25
75
125
T
J
,Junction Temperature(℃ )
175
R
DS(on)
,(Normalized)
Drain-to-Source On Resistance
1.8
1.6
1.4
1.2
1
0.8
0.6
-75
PULSED TEST
Vgs=10v
Id=75A
-25
25
75
125
T
J
,Junction Temperature(℃ )
175
Figure 7. Normalized Breakdown Voltage vs Junction
Temperature
1000
Operation in This Area
Figure 8. Normalized On Resistance vs Junction
Temperature
40
1.3
V
GS(th)
,(Normalized)
Drain-to-Source On Resistance [mΩ]
1.2
30
1.1
Tj = 150
℃
100μs
1ms
V
GS
= V
DS
I
D
= 250μA
Tj = 25℃
I
D
,Drain Current,A
100
10ms
DC
10
SINGLE PULSE
T
C
=25℃
Threshold Voltage
1
20
0.9
0.8
10
0.7
Note
：
1. V
DD
= 5V
2. 250us Pul s e
Test
0.6
0.5
0
2
0.4
-75
4
6
8
10
175
V
GS
[V]
-25
,Gate-to-Source Voltage
125
25
75
1
0.1
1
10
100
V
DS
,Drain-to-Source Voltage,V
T
J
,Junction Temperature(℃ )
Figure 9. Maximum Safe Operating
10
Figure 10. Normalized Threshold Voltage vs Junction
Temperature
1
Duty Cycle - Descending Order
0.5
0.2
T emI R s o s [
ϴ
C
]
h r a e p ne Z J
0.1
0.1
0.05
0.02
0.01
Single Pulse
0.01
R
θJC
= 1
℃
/
w
0.001
1.E-05
1.E-04
1.E-03
1.E-02
1.E-01
Rectangular Pulse Duration [sec]
Figure 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D .
Page 5 of 9
2 0 1 7 V0 2
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