Silicon
N-Channel
Power MOSFET
R
○
CS180N06 A0
General Description
：
CS180N06 A0, the silicon N-channel Enhanced
VDMOSFETs, is obtained by advanced Trench Technology
which reduce the conduction loss, improve switching
performance and enhance the avalanche energy. The transistor
can be used in various power switching circuit for system
miniaturization and higher efficiency. The package form is TO-263,
which accords with the RoHS standard.
V
DSS
I
D
（
Silicon limited current
）
P
D
(T
C
=25℃)
R
DS(ON)Typ
60
180
245
3.2
V
A
W
mΩ
Features：
l
Fast Switching
l
Low ON Resistance
(Rdson≤4mΩ)
l
Low Gate Charge
(Typical Data:86.2nC)
l
Low Reverse transfer capacitances
(Typical:342pF)
l
100% Single Pulse avalanche energy Test
Applications
：
Power switch circuit of adaptor and charger.
Absolute
（Tc=
25℃ unless otherwise specified）
：
Symbol
V
DSS
I
D
I
DM
V
GS
E
AS
P
D
T
J
，T
stg
a1
Parameter
Drain-to-Source Voltage
Continuous Drain Current
Continuous Drain Current T
C
= 100
°C
Pulsed Drain Current
Gate-to-Source Voltage
Rating
60
180
116
720
±20
870
245
1.96
150，–55 to 150
Units
V
A
A
A
V
mJ
W
W/℃
℃
a2
Single Pulse Avalanche Energy
Power Dissipation
Derating Factor above 25°C
Operating Junction and Storage Temperature Range
W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D .
Pag e 1 of 1 0
2 0 1 9 V0 1
CS180N06 A0
Electrical Characteristics
（Tc=
25℃ unless otherwise specified）
：
OFF Characteristics
Symbol
V
DSS
I
DSS
I
GSS(F)
I
GSS(R)
Parameter
Drain to Source Breakdown Voltage
Drain to Source Leakage Current
Gate to Source Forward Leakage
Gate to Source Reverse Leakage
R
○
Test Conditions
V
GS
=0V, I
D
=250µA
V
DS
=60V, V
GS
= 0V,
T
a
= 25℃
V
DS
=48V, V
GS
= 0V,
T
a
= 100℃
V
GS
=+20V
V
GS
=-20V
Rating
Min.
Typ.
Max.
Unit
s
V
µA
µA
nA
nA
--
1
100
100
-100
60
--
--
--
--
--
--
--
--
--
ON Characteristics
Symbol
R
DS(ON)
V
GS(TH)
Parameter
Drain-to-Source On-Resistance
Gate Threshold Voltage
Test Conditions
V
GS
=10V,I
D
=90A
V
DS
= V
GS
, I
D
= 250µA
Rating
Min.
Typ.
Max.
Units
mΩ
V
--
2.0
3.2
--
4
4.0
Pulse width tp≤300µs,δ≤2%
Dynamic Characteristics
Symbol
C
iss
C
oss
C
rss
Parameter
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VGS=0V，VDS=25V
f=1.0MHz
Test Conditions
Rating
Min.
Typ.
Max.
Units
--
--
--
4882
635
342
--
--
--
pF
Resistive Switching Characteristics
Symbol
t
d(ON)
tr
t
d(OFF)
t
f
Q
g
Q
gs
Q
gd
Parameter
Turn-on Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain (“Miller”)Charge
VGS=10V，VDD=48V
ID=90A
VGS=10V，RG=6Ω
VDD=30V，ID=90A
Test Conditions
Rating
Min.
Typ.
Max.
Units
--
--
--
--
--
--
--
37.9
22.7
68.8
23.5
86.2
23.6
29.4
--
--
--
--
--
--
--
nC
ns
W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D .
Pag e 2 of 1 0
2 0 1 9 V0 1
CS180N06 A0
Source-Drain Diode Characteristics
Symbol
I
S
I
SM
V
SD
trr
Qrr
I
RRM
Parameter
Continuous Source Current (Body Diode)
Maximum Pulsed Current (Body Diode)
Diode Forward Voltage
Reverse Recovery Time
I
S
=90A,T
j
= 25℃
I
S
=90A,V
GS
=0V
R
○
Test Conditions
Rating
Min.
Typ.
Max.
Units
A
A
V
ns
nC
A
--
--
--
--
dI
F
/dt=100A/us,
V
GS
=0V
--
--
--
36
40.4
2.5
180
720
1.2
--
--
--
Reverse Recovery Charge
Reverse Recovery Current
--
--
Pulse width tp≤300µs,δ≤2%
Symbol
R
θ
JC
R
θ
JA
Parameter
Junction-to-Case
Junction-to-Ambient
Max.
0.51
62.5
Units
℃/W
℃/W
：Repetitive
rating; pulse width limited by maximum junction temperature
：L=0.5mH,
I
D
=59A, Start T
J
=25℃
a3
：Recommend
soldering temperature defined by IPC/JEDEC J-STD 020
a2
a1
W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D .
Pag e 3 of 1 0
2 0 1 9 V0 1
CS180N06 A0
Characteristics Curve：
R
○
Figure 1 Maximum Forward Bias Safe Operating Area
Figure 2 Maximum Power Dissipation vs Case Temperature
Figure 3 Maximum Continuous Drain Current vs Case Temperature
Figure 4 Typical Output Characteristics
Figure 5 Drain-to-Source On Resistance vs Drain Current
Figure 6 Typical Transfer Characteristics
Pag e 4 of 1 0
W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D .
2 0 1 9 V0 1
CS180N06 A0
R
○
Figure 7 Typical Gate Charge vs Gate to Source Voltage
Figure 8 Typical Body Diode Transfer Characteristics
Figure 9 Typical Capacitance vs Drain to Source Voltage
Figure 10 Typical Drian to Source on Resistance
vs Junction Temperature
W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D .
Pag e 5 of 1 0
2 0 1 9 V0 1
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