CRSH100N06L2,CRSD100N06L2
华润微电 子（重庆） 有限公司
Features
• Uses CRM(CQ) advanced SkyMOS2 technology
• Extremely low on-resistance R
DS(on)
• Excellent Q
g
xR
DS(on)
product(FOM)
• Qualified according to JEDEC criteria
Applications
• Synchronous Rectification for AC/DC Quick Charger
• Battery management
• UPS (Uninterrupible Power Supplies)
V
DS
R
DS(on)@10V typ
R
DS(on)@4.5V typ
I
D
SkyMOS2 N-MOSFET 60V, 8.2mΩ, 79A
Product Summary
60V
8.2mΩ
11.1mΩ
79A
100% Avalanche Tested
CRSH100N06L2
CRSD100N06L2
Package Marking and Ordering Information
Part #
CRSH100N06L2
CRSD100N06L2
Marking
CRSH100N06L2
CRSD100N06L2
Package
TO-251
TO-252
Packing
Tape&Reel
Tape&Reel
Reel Size
N/A
N/A
Tape Width
N/A
N/A
Qty
4000pcs
4000pcs
Absolute Maximum Ratings
Parameter
Drain-source voltage
Continuous drain current
T
C
= 25°C (Package limit)
T
C
= 25°C (Silicon limit)
T
C
= 100°C (Silicon limit)
Pulsed drain current (T
C
= 25°C, t
p
limited by T
jmax
)
Avalanche energy, single pulse (L=0.3mH, Rg=25Ω)
[1]
Repeative avalanche Current (L=0.3mH)
[2]
Repeative avalanche (L=0.3mH)
[2]
Gate-Source voltage
I
D pulse
E
AS
I
AR
E
AR
V
GS
I
D
80
79
50
316
38
12
22
±20
A
mJ
A
mJ
V
A
Symbol
V
DS
Value
60
Unit
V
©China Resources Microelectronics (Chongqing) Limited
Page 1
CRSH100N06L2,CRSD100N06L2
华润微电 子（重庆） 有限公司
Power dissipation (T
C
= 25°C )
Operating junction and storage temperature
Notes:1.EAS was tested at Tj = 25℃, ID = 16A.
2. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low
frequency and duty cycles to keep initial TJ =25°C.
SkyMOS2 N-MOSFET 60V, 8.2mΩ, 79A
P
tot
T
j
,
T
stg
101.2
-55...+150
W
°C
Thermal Resistance
Parameter
Thermal resistance, junction – case
Thermal resistance, junction – ambient
[3]
Symbol
R
thJL
R
thJA
Max
1.24
94
Unit
°C/W
Notes:3. Surface mounted FR-4 board by JEDEC (jesd51-7). Continuous current at TC=25℃ is
silicon limited
Electrical Characteristic
(at Tj = 25 °C, unless otherwise specified)
Parameter
Symbol
Value
min.
typ.
max.
Unit
Test Condition
Static Characteristic
Drain-source breakdown
voltage
Gate threshold voltage
Zero gate voltage drain
current
Gate-source leakage
current
BV
DSS
V
GS(th )
60
1.2
-
1.7
-
2.2
V
V
V
GS
=0V, I
D
=250uA
V
DS
=V
GS
,I
D
=250uA
V
DS
=60V,V
GS
=0V
I
DSS
-
-
I
GSS
-
0.02
-
10
1
10
100
nA
µA
T
j
=25°C
T
j
=125°C
V
GS
=±20V,V
DS
=0V
V
GS
=10V, I
D
=20A
-
Drain-source on-state
resistance
R
DS(on)
-
8.5
8.2
10.0
9.8
mΩ
TO-251
TO-252
V
GS
=4.5V, I
D
=20A
-
-
Transconductance
g
fs
-
11.7
11.1
102
14.6
13.9
-
mΩ
S
TO-251
TO-252
V
DS
=5V,I
D
=12A
©China Resources Microelectronics (Chongqing) Limited
Page 2
CRSH100N06L2,CRSD100N06L2
华润微电 子（重庆） 有限公司
SkyMOS2 N-MOSFET 60V, 8.2mΩ, 79A
Dynamic Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Gate Total Charge
Gate-Source charge
Gate-Drain charge
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Gate resistance
C
iss
C
oss
C
rss
Q
G
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
R
G
-
-
-
-
-
-
-
-
-
-
-
1038
309
30
18.3
4.4
2.3
7.9
29
19.7
4.6
1.7
-
-
-
-
-
-
-
-
-
-
3
Ω
V
GS
=0V, V
DS
=0V,
f=1MHz
ns
V
GS
=10V, V
DD
=30V,
R
G_ext
=2.7Ω
nC
V
GS
=10V, V
DS
=30V,
I
D
=12A, f=1MHz
pF
V
GS
=0V, V
DS
=30V,
f=1MHz
Body Diode Characteristic
Parameter
Body Diode Forward
Voltage
Body Diode Reverse
Recovery Time
Body Diode Reverse
Recovery Charge
Symbol
Value
min.
-
-
-
typ.
0.71
40
17.8
max.
1
-
-
Unit
V
ns
nC
Test Condition
V
GS
=0V,I
SD
=1A
V
SD
t
rr
Q
rr
I
F
=12A, dI/dt=100A/µ
s
©China Resources Microelectronics (Chongqing) Limited
Page 3
CRSH100N06L2,CRSD100N06L2
华润微电 子（重庆） 有限公司
SkyMOS2 N-MOSFET 60V, 8.2mΩ, 79A
Typical Performance Characteristics
Fig 1: Output Characteristics
60
120
Fig 2: Transfer Characteristics
110
100
90
10V
50
4.5V
3.5V
V
DS
=5V
40
80
I
D
(A)
30
I
D
(A)
70
60
50
3V
20
40
30
125°C
25°C
0
1
2
3
4
5
10
V
GS
=2.5V
0
1
2
3
4
5
20
10
0
0
V
DS
(V)
V
GS
(V)
14.0
13.0
12.0
Fig 3: Rds(on) vs Drain Current and
Gate Voltage
Fig 4: Rds(on) vs Gate Voltage
39
37
35
33
31
29
27
25
23
21
19
17
15
13
11
9
7
5
0
1
2
3
4
I
D
=12A
V
GS
=4.5V
R
DS(on)
(m )
R
DS(on)
(m )
11.0
10.0
9.0
8.0
7.0
6.0
5.0
5
7
9
11
V
GS
=10V
125°C
25°C
5
6
7
8
9
10
I
D
(A)
V
GS
(V)
Fig 5: Rds(on) vs. Temperature
1.7
1.6
Fig 6: Capacitance Characteristics
1000
Ciss
R
DS(on)
_Normalized
1.5
1.4
1.3
1.2
1.1
1.0
0.9
0.8
25
50
75
100
125
150
V
GS
=10V
I
D
=20A
C - Capacitance (PF)
Coss
100
V
GS
=4.5V
I
D
=20A
V
GS
=0V
f=1MHz
10
0
10
20
Crss
30
40
50
60
Tj - Junction Temperature (°C)
V
DS
(V)
©China Resources Microelectronics (Chongqing) Limited
Page 4
CRSH100N06L2,CRSD100N06L2
华润微电 子（重庆） 有限公司
SkyMOS2 N-MOSFET 60V, 8.2mΩ, 79A
Fig 8: Body-diode Forward
Characteristics
100
Fig 7: Gate Charge Characteristics
10
8
I
S
- Diode Current(A)
V
DS
=30V
I
D
=12A
V
GS
(V)
6
10
125˚C
25˚C
4
1
2
0
0
2
4
6
8
10
12
14
16
18
20
0.1
0.2
0.4
0.6
0.8
1
1.2
1.4
Qg (nC)
V
SD
- Diode Forward Voltage(V)
Fig 9: Power Dissipation
110
100
90
80
Fig 10: Drain Current Derating
90
80
70
60
P
tot
(W)
70
60
50
40
30
20
10
0
0
25
50
75
100
125
150
I
D
(A)
50
40
30
20
10
0
0
25
50
75
100
125
150
175
V
GS
≥10V
T
C
- Case Temperature (°C)
T
C
- Case Temperature (°C)
Fig 11: Safe Operating Area
1000
1us
100
Limited by
Rds(on)
10us
100us
I
D
(A)
10
1ms
10ms
1
DC
Single pulse
Tc=25˚C
0.1
0.1
1
10
100
V
DS
(V)
©China Resources Microelectronics (Chongqing) Limited
Page 5
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