Silicon N-Channel Power Trench MOSFET
CS12N06 AE-G
General Description
：
CS12N06 AE-G, the silicon N-channel Enhanced
VDMOSFETs, is obtained by the high density Trenchtechnology
which reduce the conduction loss, improve switching
performance and enhance the avalanche energy. The transistor
can be used in various power switching circuit for system
miniaturization and higher efficiency. The package form is SOP-8,
which accords with the RoHS standard.
V
DSS
I
D
（
Silicon limited current
）
P
D
(T
C
=25℃)
R
○
60
12
3.2
10.5
V
A
W
mΩ
R
DS(ON)Typ
Features：
l
Fast Switching
l
Low ON Resistance
l
Low Gate Charge
l
Low Reverse transfer capacitances
l
100% Single Pulse avalanche energy Test
l
Halogen free
Applications
：
Power switch circuit of adaptor and charger.
Absolute
（T
A
= 25℃ unless otherwise specified）
：
Symbol
V
DSS
I
D
I
DM
a1
Parameter
Drain-to-Source Voltage
Continuous Drain Current
Continuous Drain Current T
A
= 100
°C
Pulsed Drain Current
Gate-to-Source Voltage
Rating
60
12
8
48
±20
135
3.2
150，–55 to 150
Units
V
A
A
A
V
mJ
W
℃
V
GS
E
AS
P
D
T
J
，T
stg
a2
Single Pulse Avalanche Energy
Power Dissipation
Operating Junction and StorageTemperatureRange
WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD.P a ge
1 of 10
2 0 1 9 V0 1
CS12N06 AE-G
Electrical Characteristics
（T
A
= 25℃ unless otherwise specified）
：
OFF Characteristics
Symbol
V
DSS
I
DSS
I
GSS(F)
I
GSS(R)
Parameter
Drain to Source Breakdown Voltage
R
○
Test Conditions
V
GS
=0V,I
D
=250µA
V
DS
= 60V, V
GS
= 0V,
T
a
= 25℃
V
DS
=48V, V
GS
= 0V,
T
a
= 125℃
Rating
Min.
Typ.
Max.
Units
V
µA
60
--
--
--
--
--
--
--
--
--
--
1
100
100
-100
Drain to Source Leakage Current
Gate to Source Forward Leakage
Gate to Source Reverse Leakage
V
GS
=+20V
V
GS
=-20V
nA
nA
ON Characteristics
Symbol
R
DS(ON)
V
GS(TH)
Parameter
Drain-to-Source On-Resistance
V
GS
=4.5V,I
D
=9A
Test Conditions
V
GS
=10V,I
D
=12A
Rating
Min.
Typ.
Max.
Units
mΩ
mΩ
V
--
0.9
10.5
13
1.4
13.5
16
1.9
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= 250µA
Pulse width tp≤300µs,δ≤2%
Dynamic Characteristics
Symbol
C
iss
C
oss
C
rss
Parameter
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V
DS
=30V,V
GS
=0V,
f=1.0MHz
Test Conditions
Rating
Min.
Typ.
Max.
Units
--
--
--
2370
164
123
--
--
--
pF
Resistive Switching Characteristics
Symbol
t
d(ON)
tr
t
d(OFF)
t
f
Q
g
Q
gs
Q
gd
Parameter
Turn-on Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain (“Miller”)Charge
V
DS
=30V,I
D
=12A,
V
GS
=10V
V
DD
=30V, I
D
=10A,
R
G
= 3Ω,V
GS
=10V
Test Conditions
Rating
Min.
Typ.
Max.
Units
--
--
--
--
--
--
--
13.1
25.1
60.8
9.0
50.7
7.0
12.3
--
--
--
--
--
--
nC
ns
WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD.
P a ge 2 o f 1 0
2 0 1 9 V0 1
CS12N06 AE-G
Source-Drain Diode Characteristics
Symbol
V
SD
T
rr
Q
rr
Parameter
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
R
○
Test Conditions
I
S
=12A,V
GS
=0V
V
GS
=0V,I
S
=12A,
di/dt=100A/us
Rating
Min.
Typ.
Max.
Units
V
ns
nC
--
--
--
--
22
19.5
1.2
Pulse width tp≤300µs,δ≤2%
Symbol
R
θ
JA
a1
Parameter
Junction-to-Ambient
Max.
40
Units
℃/W
：Repetitive
rating; pulse width limited by maximum junction temperature
：Vdd=25V，L=1mH,
I
D
=17A, Start T
J
=25℃
a3
：Recommend
soldering temperature defined by IPC/JEDEC J-STD 020
a2
WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD.P a ge
3 of 10
2019V01
CS12N06 AE-G
Characteristics Curve：
80
70
60
V
GS
= 4.0V
100
V
GS
=4.5,5,6,10V
R
○
250μs
PULSE
TEST
PULSED TEST
VDS = 20V
I
D
,Drain Current,A
50
40
30
20
10
0
0
1
2
3
4
V
DS
,Drain-to-Source Voltage,V
5
V
GS
= 3V
V
GS
= 3.5V
I
D
,Drain Current,A
10
150℃
1
25℃
0.1
1
2
3
4
V
GS
,Gate-to-Source Voltage,V
5
Figure 1. Output Characteristics
14
Figure 2.Transfer Characteristics
R
DS(on),
Drain-to-Source On
Resistance,mΩ
13
12
11
10
9
8
0
V
GS
= 4.5V
PULSED TEST
T
j
= 25℃
10
PULSED TEST
V
GS
= 0V
I
SD
,Reverse Drain Current,A
150℃
1
25℃
V
GS
= 10V
0.1
0.2
0.4
0.6
0.8
V
SD
,Source-to-Drain Voltage,V
1
10
20
I
D
,Drain Current,A
30
Figure 3. Drain-to-Source On Resistance vs Drain
Current
10000
Figure 4. Typical Body Diode Transfer Characteristics
12
V
DS
= 30V
Capacitance,pF
C
iss
1000
V
GS
,Gate-to-Source Voltage,V
10
8
6
4
2
0
I
D
= 12A
C
oss
f = 1MHz
C
iss
= C
gs
+C
gd
C
oss
= C
ds
+C
gd
C
rss
100
0.1
1
10
100
V
DS
,Drain-to-Source Voltage,V
0
10
20
30
40
50
Q
G
,Total Gate Charge,nC
60
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD.P a ge
4 of 10
2019V01
CS12N06 AE-G
R
○
WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD.P a ge
5 of 10
2019V01
Linux开发
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
