CRTS084NE6N
华润微电子(重庆)有限公司
Features
• Uses CRM(CQ) advanced Trench technology
• Extremely low on-resistance R
DS(on)
• Excellent Q
g
xR
DS(on)
product(FOM)
• Qualified according to JEDEC criteria
Applications
• Motor control and drive
• Battery management
• UPS (Uninterrupible Power Supplies)
Trench N-MOSFET 68V, 6.8mΩ, 83A
Product Summary
V
DS
R
DS(on) typ.
I
D
68V
6.8mΩ
83A
100% DVDS Tested
100% Avalanche Tested
Package Marking and Ordering Information
Part #
CRTS084NE6N
Marking
CRTS084NE6N
Package
TO-263
Packing
Reel
Reel Size
N/A
Tape Width
N/A
Qty
1000pcs
Absolute Maximum Ratings
Parameter
Drain-source voltage
Continuous drain current
T
C
= 25°C (Silicon limit)
T
C
= 25°C (Package limit)
T
C
= 100°C (Silicon limit)
Pulsed drain current (T
C
= 25°C, t
p
limited by T
jmax
)
Avalanche energy, single pulse (L=0.5mH, Rg=25Ω)
Gate-Source voltage
Power dissipation (T
C
= 25°C)
Operating junction and storage temperature
Soldering temperature, wave soldering only allowed at leads
(1.6mm from case for 10s)
I
D pulse
E
AS
V
GS
P
tot
T
j
,
T
stg
T
sold
I
D
83
87
53
332
100
±25
111
-55...+150
260
A
mJ
V
W
°C
°C
A
Symbol
V
DS
Value
68
Unit
V
©China Resources Microelectronics (Chongqing) Limited
Page 1
CRTS084NE6N
华润微电子(重庆)有限公司
Thermal Resistance
Parameter
Thermal resistance, junction – case.
Thermal resistance, junction – ambient(min. footprint)
Symbol
R
thJC
R
thJA
*
Max
1.13
91
Unit
°C/W
Trench N-MOSFET 68V, 6.8mΩ, 83A
Electrical Characteristic
(at Tj = 25 °C, unless otherwise specified)
Parameter
Symbol
Value
min.
typ.
max.
Unit
Test Condition
Static Characteristic
Drain-source breakdown
voltage
Gate threshold voltage
BV
DSS
V
GS(th )
68
2
-
3
-
4
V
V
V
GS
=0V, I
D
=250uA
V
DS
=V
GS
,I
D
=250uA
V
DS
=65V,V
GS
=0V
Zero gate voltage drain
current
Gate-source leakage
current
Drain-source on-state
resistance
Transconductance
I
DSS
-
-
I
GSS
-
0.05
-
±10
1
100
±100
nA
µA
T
j
=25°C
T
j
=150°C
V
GS
=±25V,V
DS
=0V
V
GS
=10V, I
D
=40A,
R
DS(on)
-
-
g
fs
-
6.8
13.9
105
8.4
16.5
-
S
mΩ
T
j
=25°C
T
j
=150°C
V
DS
=5V,I
D
=40A
Dynamic Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Gate Total Charge
Gate-Source charge
Gate-Drain charge
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Gate resistance
C
iss
C
oss
C
rss
Q
G
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
R
G
-
-
-
-
-
-
-
-
-
-
-
3091
292
219
72
17
26
13
75
46
73
2.4
-
-
-
-
-
-
-
-
-
-
-
Ω
V
GS
=0V, V
DS
=0V,
f=1MHz
ns
V
GS
=10V, V
DD
=32V,
R
G_ext
=2.7Ω,ID=40A
nC
V
GS
=10V, V
DS
=32V,
I
D
=40A, f=1MHz
pF
V
GS
=0V, V
DS
=35V,
f=1MHz
©China Resources Microelectronics (Chongqing) Limited
Page 2
CRTS084NE6N
华润微电子(重庆)有限公司
Body Diode Characteristic
Parameter
Body Diode Forward
Voltage
Body Diode Forward
Current
Body Diode Reverse
Recovery Time
Body Diode Reverse
Recovery Charge
Symbol
Trench N-MOSFET 68V, 6.8mΩ, 83A
Value
min.
-
typ.
0.9
max.
1.3
83
-
-
36
43
-
-
Unit
V
A
ns
nC
Test Condition
V
GS
=0V,I
SD
=40A
T
C
= 25°C
V
SD
I
S
t
rr
Q
rr
I
F
=40A, dI/dt=100A/µ
s
*The value of R
thJA
is measured by placing the device in a still air box which is one cubic foot.
©China Resources Microelectronics (Chongqing) Limited
Page 3
CRTS084NE6N
华润微电子(重庆)有限公司
Trench N-MOSFET 68V, 6.8mΩ, 83A
Typical Performance Characteristics
Fig 1: Output Characteristics
250
Fig 2: Transfer Characteristics
200
10V
T
j
=25°C
7.0V
6.0V
160
V
DS
=5V
200
I
D
(A)
5.5V
100
I
D
(A)
150
120
80
50
V
GS
=5.5V
40
150°C
25°C
0
0
2
4
6
8
10
0
2
3
4
5
6
7
V
DS
(V)
V
GS
(V)
11
Fig 3: Rds(on) vs Drain Current and
Gate Voltage
T
j
=25°C
Fig 4: Rds(on) vs Gate Voltage
24
22
20
I
D
=40A
10
R
DS(on)
(mΩ)
R
DS(on)
(mΩ)
18
16
14
12
9
150°C
8
V
GS
=7V
V
GS
=10V
10
8
6
7
25°C
6
0
40
80
120
160
200
4
4
5
6
7
8
9
10
I
D
(A)
V
GS
(V)
Fig 5: Rds(on) vs. Temperature
2.5
Fig 6: Capacitance Characteristics
100000
C - Capacitance (PF)
2.0
V
GS
=10V
I
D
=40A
R
DS(on)
_Normalized
10000
Ciss
1000
1.5
1.0
Coss
100
0.5
V
GS
=0V
f=1MHz
Crss
0.0
-50
-25
0
25
50
75
100
125
150
10
0
13
26
39
52
65
Tj - Junction Temperature (°C)
V
DS
(V)
©China Resources Microelectronics (Chongqing) Limited
Page 4
CRTS084NE6N
华润微电子(重庆)有限公司
Trench N-MOSFET 68V, 6.8mΩ, 83A
Fig 8: Body-diode Forward
Characteristics
Fig 7: Gate Charge Characteristics
10
1000
8
V
GS
(V)
6
V
DS
=32V
I
D
=40A
I
S
- Diode Current(A)
100
150˚C
25˚C
10
4
2
0
0
14
28
42
56
70
1
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
Qg (nC)
V
SD
- Diode Forward Voltage(V)
Fig 9: Power Dissipation
120
Fig 10: Drain Current Derating
90
80
100
70
80
60
P
tot
(W)
I
D
(A)
50
40
60
40
30
20
V
GS
≥10V
20
10
0
0
25
50
75
100
125
150
0
0
25
50
75
100
125
150
175
Tc - Case Temperature (°C)
Tc - Case Temperature (°C)
Fig 11: Safe Operating Area
1000
1us
10us
100us
10
1ms
10ms
1
DC
100
Limited by
Rds(on)
I
D
(A)
Single pulse
Tc=25˚C
0.1
0.1
1
10
100
V
DS
(V)
©China Resources Microelectronics (Chongqing) Limited
Page 5
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