Silicon
N-Channel
Power
MOSFET
R
○
CS180N08 A8
General Description
：
CS180N08
A8,
the
silicon
N-channel
Enhanced
VDMOSFETs, is obtained by the high density Trench
technology which reduce the conduction loss, improve switching
performance and enhance the avalanche energy. This device is
suitable for use as a load switch and PWM applications. The
package form is TO-220AB, which accords with the RoHS
standard.
V
DSS
I
D
（
Silicon limited current
）
I
D
（
Package limited
）
R
DS(ON)Typ
80
180
120
2.6
V
A
A
mΩ
Features：
l
Fast Switching
l
Low ON Resistance
(Rdson≤3.3mΩ)
l
Low Gate Charge
l
Low Reverse transfer capacitances
l
100% Single Pulse avalanche energy Test
Applications
：
Power switch circuit of adaptor and charger.
Absolute
（T
C
= 25℃ unless otherwise specified）
Symbol
V
DSS
I
D
I
DM
a1
Parameter
Drain-to-Source Voltage
Continuous Drain Current
Continuous Drain Current T
C
= 100
°C
Pulsed Drain Current
Gate-to-Source Voltage
Rating
80
180
120
480
±20
1519
223
1.78
150，–55 to 150
300
Units
V
A
A
A
V
mJ
W
W/℃
℃
℃
V
GS
E
AS
P
D
T
J
，T
stg
T
L
a2
Avalanche Energy
Power Dissipation T
C
= 25
°C
Derating Factor above 25°C
Operating Junction and Storage Temperature Range
MaximumTemperature for Soldering
W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D .
Pag e 1 of 1 0
2 0 2 0 V0 1
CS180N08 A8
Electrical Characteristics
（T
C
= 25
℃
unless otherwise specified）
：
OFF Characteristics
Symbol
V
DSS
I
DSS
I
GSS(F)
I
GSS(R)
Parameter
Drain to Source Breakdown Voltage
Drain to Source Leakage Current
Gate to Source Forward Leakage
Gate to Source Reverse Leakage
R
○
Test Conditions
V
GS
=0V, I
D
=250µA
V
DS
=80V, V
GS
= 0V,
T
C
= 25℃
V
DS
=64V, V
GS
= 0V,
T
C
= 125℃
V
GS
=20V
V
GS
=-20V
Rating
Min.
Typ.
Max.
Units
V
µA
nA
nA
80
--
--
--
--
--
--
--
--
--
--
1
500
100
-100
ON Characteristics
Symbol
R
DS(ON)
V
GS(TH)
Parameter
Drain-to-Source On-Resistance
Gate Threshold Voltage
Test Conditions
V
GS
=10V,I
D
=40A
V
DS
= V
GS
, I
D
= 250µA
Rating
Min.
--
2
Typ.
2.6
Max.
3.3
4
Units
mΩ
V
Pulse width tp≤300µs,δ≤2%
Dynamic Characteristics
Symbol
R
g
C
iss
C
oss
C
rss
Parameter
Gate resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V
GS
= 0V V
DS
=40V
f = 1.0MHz
Test Conditions
V
GS
=0V, V
DS
=0V, f=1MHz
Rating
Min.
--
--
--
--
Typ.
1.2
8251
861
605
Max.
--
--
--
--
Units
Ω
pF
Resistive Switching Characteristics
Symbol
t
d(ON)
tr
t
d(OFF)
t
f
Q
g
Q
gs
Q
gd
Parameter
Turn-on Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain (“Miller”)Charge
I
D
=90A V
DD
=64V
V
GS
= 10V
V
GS
=10V，R
G
=6Ω
V
DD
=40V，I
D
=90A
Test Conditions
Rating
Min.
--
--
--
--
--
--
--
Typ.
46
67
125
77
174
35
75
Max.
--
--
--
--
--
--
--
Units
ns
nC
W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D .
Pag e 2 of 1 0
2 0 2 0 V0 1
CS180N08 A8
Source-Drain Diode Characteristics
Symbol
I
S
I
SM
V
SD
trr
Qrr
Parameter
Continuous Source Current (Body Diode)
Maximum Pulsed Current (Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
I
S
=40A,V
GS
=0V
di/dt=100A/us
IF=20A
R
○
Test
Conditions
Rating
Min.
--
--
--
--
--
Typ.
--
--
--
54
109
Max.
120
480
1.2
--
--
Units
A
A
V
ns
nC
Pulse width tp≤300µs,δ≤2%
Symbol
R
θ
JC
R
θ
JA
a1
a2
Parameter
Junction-to-Case
Junction-to-Ambient
Max.
0.56
62.5
Units
℃/W
℃/W
：Repetitive
rating; pulse width limited by maximum junction temperature
：L=0.5mH,Ias=77.9A
Start T
J
=25℃
W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D .
Page 3 of 10
2 0 2 0 V0 1
CS180N08 A8
Characteristics Curve：
R
○
W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D .
Page 4 of 10
2 0 2 0 V0 1
CS180N08 A8
10 0
Note:
1.V
DS
=5V
2.250us Pulse Test
R
○
100
I
D
,Drain Current[A]
Is,Source Current[A]
10
Tj=150℃
1
10
Tj=150℃
Tj=25℃
Tj=25℃
1
0.1
0.1
0.01
1
2
3
4
5
6
0
0.2
0.4
0.6
0.8
1
1.2
V
GS
,Gate-to-Source Voltage[V]
V
SD
，
Source-to-Drain Voltage[V]
Figure 6 Typical T ransfer Characteristics
2.5
PULSED TEST
T
j
= 25℃
Figure 7 Typical Body Diode Transfer
Characteristics
3.50
R
DS(on),
Drain-to-Source On Resistance,mΩ
PULSED TEST
I
D
= 40A
3.00
R
DS(on)
,(Normalized)
Drain-to-Source On Resistance
2
1.5
VGS=10V
1
2.50
V
GS
= 10V
2.00
0.5
1.50
0.00
10.00
20.00
30.00
40.00
50.00
0
-50
0
50
100
150
T
J
,Junction Temperature(℃ )
I
D
,Drain Current,A
Figure 8. Drain-to-Source On Resistance vs
Drain Current
1.3
1.2
1.1
V
GS
= V
DS
I
D
= 250μA
Figure 9. Normalized On Resistance vs
Junction Temperature
1.15
B
VDSS
,(Normalized)
Drain-to-Source Breakdown Voltage
1.1
V
GS(th)
,(Normalized)
Threshold Voltage
1
0.9
0.8
0.7
0.6
0.5
0.4
-5 0
0
50
100
150
T
J
,Junction Temperature(℃ )
1.05
1
0.95
0.9
0.85
-50
0
50
100
150
T
J
,Junction Temperature(℃ )
Figure10. Normalized T hreshold Voltage vs
Junction T emperature
Figure 11. Normalized Breakdown Voltage vs
Junction Temperature
W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D .
Page 5 of 10
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