Silicon
N-Channel
Power
MOSFET
R
○
CS105N08 B8
General Description
：
CS105N08
B8,
the
silicon
N-channel
Enhanced
VDMOSFETs, is obtained by the high density Trench
technology which reduce the conduction loss, improve switching
performance and enhance the avalanche energy. This device is
suitable for use as a load switch and PWM applications. The
package form is TO-220AB, which accords with the RoHS
standard.
V
DSS
I
D
（
Silicon limited current
）
I
D
（
Package limited
）
P
D
R
DS(ON)Typ
80
105
60
147
6.3
V
A
A
W
mΩ
Features：
l
Fast Switching
l
Low ON Resistance
(Rdson≤8
mΩ)
l
Low Gate Charge
l
Low Reverse transfer capacitances
l
100% Single Pulse avalanche energy Test
Applications
：
Power switch circuit of adaptor and charger.
Absolute
（T
j
= 25℃ unless otherwise specified）
Symbol
V
DSS
I
D
I
DM
a1
Parameter
Drain-to-Source Voltage
Continuous Drain Current
Continuous Drain Current T
C
= 100
°C
Pulsed Drain Current
Gate-to-Source Voltage
Rating
80
105
67
420
±20
420
147
1.17
150，–55 to 150
300
Units
V
A
A
A
V
mJ
W
W/℃
℃
℃
V
GS
E
AS
P
D
T
J
，T
stg
T
L
a2
Avalanche Energy
Power Dissipation T
C
= 25
°C
Derating Factor above 25°C
Operating Junction and Storage Temperature Range
MaximumTemperature for Soldering
W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D .
Pag e 1 of 1 0
2 0 1 9 V0 1
CS105N08 B8
Electrical Characteristics
（T
j
= 25
℃
unless otherwise specified）
：
OFF Characteristics
Symbol
V
DSS
I
DSS
I
GSS(F)
I
GSS(R)
Parameter
Drain to Source Breakdown Voltage
Drain to Source Leakage Current
Gate to Source Forward Leakage
Gate to Source Reverse Leakage
R
○
Test Conditions
V
GS
=0V, I
D
=250µA
V
DS
=80V, V
GS
= 0V,
T
j
= 25℃
V
DS
=64V, V
GS
= 0V,
T
j
= 125℃
V
GS
=20V
V
GS
=-20V
Rating
Min.
Typ.
Max.
Units
V
µA
nA
nA
80
--
--
--
--
--
--
--
--
--
--
1
100
100
-100
ON Characteristics
Symbol
R
DS(ON)
V
GS(TH)
Parameter
Drain-to-Source On-Resistance
Gate Threshold Voltage
Test Conditions
V
GS
=10V,I
D
=50A
V
DS
= V
GS
, I
D
= 250µA
Rating
Min.
--
2
Typ.
6.3
3
Max.
8
4
Units
mΩ
V
Pulse width tp≤300µs,δ≤2%
Dynamic Characteristics
Symbol
R
g
C
iss
C
oss
C
rss
Parameter
Gate resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V
GS
= 0V V
DS
=40V
f = 1.0MHz
Test Conditions
V
GS
=0V, V
DS
=0V, f=1MHz
Rating
Min.
--
--
--
--
Typ.
1.2
2948
354
198
Max.
--
--
--
--
Units
Ω
pF
Resistive Switching Characteristics
Symbol
t
d(ON)
tr
t
d(OFF)
t
f
Q
g
Q
gs
Q
gd
Parameter
Turn-on Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain (“Miller”)Charge
I
D
=50A V
DD
=40V
V
GS
= 10V
V
GS
=10V，R
G
=6Ω
V
DD
=40V，I
D
=50A
Test Conditions
Rating
Min.
--
--
--
--
--
--
--
Typ.
24
15
52
17
61
13
24
Max.
--
--
--
--
--
--
--
Units
ns
nC
W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D .
Pag e 2 of 1 0
2 0 1 9 V0 1
CS105N08 B8
Source-Drain Diode Characteristics
Symbol
I
S
I
SM
V
SD
trr
Qrr
Parameter
Continuous Source Current (Body Diode)
Maximum Pulsed Current (Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
R
○
Test
Conditions
T
C
= 25
°C
I
S
=50A,V
GS
=0V
di/dt=100A/us
IF=50A
Rating
Min.
--
--
--
--
--
Typ.
--
--
--
40
61
Max.
105
420
1.2
--
--
Units
A
A
V
ns
nC
Pulse width tp≤300µs,δ≤2%
Symbol
R
θ
JC
R
θ
JA
a1
a2
Parameter
Junction-to-Case
Junction-to-Ambient
Max.
0.85
62.5
Units
℃/W
℃/W
：Repetitive
rating; pulse width limited by maximum junction temperature
：L=0.5mH,Ias=41A
Start T
J
=25℃
W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D .
Page 3 of 10
2 0 1 9 V0 1
CS105N08 B8
Characteristics Curve：
R
○
Figure 1. Maximum Safe Operating Area
Figure 2. Maximum Power Dissipation vs Case Temperature
Figure 3. Maximum Continuous Drain Current vs
Case Temperature
vs Drain Current
Figure 4. Typical output Characteristics
Figure 5 Maximum Effective Thermal Impedance , Junction to Case
W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D .
Page 4 of 10
2 0 1 9 V0 1
CS105N08 B8
R
○
Figure 6 Typical Transfer Characteristics
Figure 7 Typical Body Diode Transfer Characteristics
Figure 8. Drain-to-Source On Resistance vs Drain Current
Figure 9. Normalized On Resistance vs Junction Temperature
Figure10. Normalized Threshold Voltage vs
Junction Temperature
Figure 11. Normalized Breakdown Voltage vs
Junction Temperature
Page 5 of 10
W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D .
2 0 1 9 V0 1
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