CRST030N10N,CRSS028N10N
华润微电子(重庆)有限公司
Features
• Uses CRM(CQ) advanced SkyMOS1 technology
• Extremely low on-resistance R
DS(on)
• Excellent Q
g
xR
DS(on)
product(FOM)
• Qualified according to JEDEC criteria
Applications
• Synchronous Rectification for AC/DC Quick Charger
• Battery management
• UPS (Uninterrupible Power Supplies)
SkyMOS1 N-MOSFET 100V, 2.5mΩ, 180A
Product Summary
V
DS
R
DS(on)
I
D
100V
2.5mΩ
180A
100% Avalanche Tested
CRST030N10N
CRSS028N10N
Package Marking and Ordering Information
Part #
CRST030N10N
CRSS028N10N
Marking
Package
TO-220
TO-263
Packing
Tube
Tube
Reel Size
N/A
N/A
Tape Width
N/A
N/A
Qty
50pcs
50pcs
-
-
Absolute Maximum Ratings
Parameter
Drain-source voltage
Continuous drain current
T
C
= 25°C (Silicon limit)
T
C
= 25°C (Package limit)
T
C
= 100°C (Silicon limit)
Pulsed drain current (T
C
= 25°C, t
p
limited by T
jmax
)
Avalanche energy, single pulse (L=0.5mH, Rg=25Ω)
[1]
Gate-Source voltage
Power dissipation (T
C
= 25°C)
Operating junction and storage temperature
Notes:1.EAS was tested at Tj = 25℃, ID = 46A.
I
D pulse
E
AS
V
GS
P
tot
T
j
,
T
stg
I
D
207
180
131
720
529
±20
227
-55...+150
A
mJ
V
W
°C
A
Symbol
V
DS
Value
100
Unit
V
©China Resources Microelectronics (Chongqing) Limited
Page 1
CRST030N10N,CRSS028N10N
华润微电子(重庆)有限公司
Thermal Resistance
Parameter
Thermal resistance, junction – case.
Thermal resistance, junction – ambient(min. footprint)
Symbol
R
thJC
R
thJA
Max
0.55
62
Unit
°C/W
SkyMOS1 N-MOSFET 100V, 2.5mΩ, 180A
Electrical Characteristic
(at Tj = 25 °C, unless otherwise specified)
Parameter
Symbol
Value
min.
typ.
max.
Unit
Test Condition
Static Characteristic
Drain-source breakdown
voltage
Gate threshold voltage
BV
DSS
V
GS(th )
100
2.2
-
3
-
3.8
V
V
V
GS
=0V, I
D
=250uA
V
DS
=V
GS
,I
D
=250uA
V
DS
=100V,V
GS
=0V
Zero gate voltage drain
current
Gate-source leakage
current
Drain-source on-state
resistance
Transconductance
I
DSS
-
-
I
GSS
-
0.05
-
±10
1
10
±100
nA
µA
T
j
=25°C
T
j
=125°C
V
GS
=±20V,V
DS
=0V
V
GS
=10V, I
D
=90A
R
DS(on)
-
-
g
fs
-
2.5
2.3
197.2
3.0
2.8
-
mΩ
S
TO-220
TO-263
V
DS
=5V,I
D
=90A
Dynamic Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Gate Total Charge
Gate-Source charge
Gate-Drain charge
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Gate resistance
C
iss
C
oss
C
rss
Q
G
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
R
G
-
-
-
-
-
-
-
-
-
-
-
11355
1446
54
169
67
30
35
111
84
112
1.8
-
-
-
-
-
-
-
-
-
-
-
Ω
V
GS
=0V, V
DS
=0V,
f=1MHz
ns
V
GS
=10V, V
DD
=50V,
R
G_ext
=3.0Ω
nC
V
GS
=10V, V
DS
=50V,
I
D
=90A, f=1MHz
pF
V
GS
=0V, V
DS
=50V,
f=1MHz
©China Resources Microelectronics (Chongqing) Limited
Page 2
CRST030N10N,CRSS028N10N
华润微电子(重庆)有限公司
Body Diode Characteristic
Parameter
Body Diode Forward
Voltage
Body Diode Reverse
Recovery Time
Body Diode Reverse
Recovery Charge
Symbol
SkyMOS1 N-MOSFET 100V, 2.5mΩ, 180A
Value
min.
-
-
-
typ.
0.9
101
338
max.
1.4
-
-
Unit
V
ns
nC
Test Condition
V
GS
=0V,I
SD
=90A
V
SD
t
rr
Q
rr
I
F
=90A,
dI/dt=100A/µs
©China Resources Microelectronics (Chongqing) Limited
Page 3
CRST030N10N,CRSS028N10N
华润微电子(重庆)有限公司
SkyMOS1 N-MOSFET 100V, 2.5mΩ, 180A
Typical Performance Characteristics
Fig 1: Output Characteristics
400
420
350
Fig 2: Transfer Characteristics
350
300
10V
8V
6.5V
V
DS
=5V
6V
I
D
(A)
280
210
I
D
(A)
250
200
150
100
5.5V
140
70
0
0
1
2
3
125°C
25°C
5V
4V
4
5
50
0
0
1
2
V
DS
(V)
3
4
V
GS
(V)
5
6
7
Fig 3: Rds(on) vs Drain Current and
Gate Voltage
4.0
Fig 4: Rds(on) vs Gate Voltage
20
I
D
=90A
R
DS(on)
(m )
3.0
V
GS
=10V
16
R
DS(on)
(m )
12
2.0
8
150°C
1.0
4
25°C
0.0
0
50
100
150
200
0
2
3
4
5
6
7
8
9
10
I
D
(A)
V
GS
(V)
Fig 5: Rds(on) vs. Temperature
2.4
2.2
Fig 6: Capacitance Characteristics
10000
I
D
=90A
C - Capacitance (PF)
1000
Ciss
R
DS(on)
_Normalized
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0
25
50
75
100
125
150
V
GS
=10V
Coss
100
V
GS
=0V
f=1MHz
10
0
10
20
30
Crss
40
50
60
70
80
Tj - Junction Temperature (°C)
V
DS
(V)
©China Resources Microelectronics (Chongqing) Limited
Page 4
CRST030N10N,CRSS028N10N
华润微电子(重庆)有限公司
SkyMOS1 N-MOSFET 100V, 2.5mΩ, 180A
Fig 8: Body-diode Forward
Characteristics
100
Fig 7: Gate Charge Characteristics
10
8
I
S
- Diode Current(A)
V
DS
=50V
I
D
=90A
V
GS
(V)
10
6
1
125˚C
25˚C
4
0.1
2
0
0
30
60
90
120
150
180
0.01
0
0.2
0.4
0.6
0.8
1
1.2
Qg (nC)
V
SD
- Diode Forward Voltage(V)
Fig 9: Power Dissipation
250
Fig 10: Drain Current Derating
200
180
200
160
140
P
tot
(W)
150
I
D
(A)
120
100
80
60
100
50
40
20
V
GS
≥10V
0
0
25
50
75
100
125
150
0
0
25
50
75
100
125
150
175
Tc - Case Temperature (°C)
Tc - Case Temperature (°C)
Fig 11: Safe Operating Area
1000
Limited by
Rds(on)
100
1us
10us
100us
1ms
I
D
(A)
10
10ms
DC
1
Single pulse
Tc=25˚C
0.1
0.1
1
10
100
V
DS
(V)
©China Resources Microelectronics (Chongqing) Limited
Page 5
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