CRSD130N10L2
华润微电子(重庆)有限公司
Features
• Uses CRM(CQ) advanced SkyMOS2 technology
• Extremely low on-resistance R
DS(on)
• Excellent Q
g
xR
DS(on)
product(FOM)
• Qualified according to JEDEC criteria
Applications
• Synchronous Rectification for AC/DC Quick Charger
• Battery management
• UPS (Uninterrupible Power Supplies)
V
DS
R
DS(on)@10V typ
R
DS(on)@4.5V typ
I
D
SkyMOS2 N-MOSFET 100V, 11.0mΩ, 65A
Product Summary
100V
11.0mΩ
14.3mΩ
65A
100% Avalanche Tested
CRSD130N10L2
Package Marking and Ordering Information
Part #
CRSD130N10L2
Marking
CRSD130N10L2
Package
TO-252
Packing
Tape\Reel
Reel Size
N/A
Tape Width
N/A
Qty
2500pcs
Absolute Maximum Ratings
Parameter
Drain-source voltage
Continuous drain current
T
C
= 25°C (Silicon limit)
T
C
= 100°C (Silicon limit)
Pulsed drain current (T
A
= 25°C, t
p
limited by T
jmax
)
Avalanche Current (L=0.5mH)
Avalanche energy, single pulse (L=0.5mH, Rg=25Ω)
Repeative avalanche Current (L=0.5mH)*
Repeative avalanche (L=0.5mH)*
Gate-Source voltage
Power dissipation (T
C
= 25°C , R
thJA
=94 K/W)
Operating junction and storage temperature
Symbol
V
DS
I
D
I
D pulse
I
AS
E
AS
I
AR
E
AR
V
GS
P
tot
T
j
,
T
stg
Value
100
65
41
261
16
64
12
33
±20
101.2
-55...+150
Unit
V
A
A
A
mJ
A
mJ
V
W
°C
*Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and
duty cycles to keep initial TJ =25°C.
©China Resources Microelectronics (Chongqing) Limited
Page 1
CRSD130N10L2
华润微电子(重庆)有限公司
Thermal Resistance
Parameter
Thermal resistance, junction – case.
Thermal resistance, junction – ambient(min. footprint)*
Soldering temperature, wave and reflow soldering are allowed
(reflow MSL1)
Symbol
R
thJC
R
thJA
T
sold
Max
1.24
94
260
Unit
°C/W
°C
SkyMOS2 N-MOSFET 100V, 11.0mΩ, 65A
* Surface mounted FR-4 board by JEDEC (jesd51-7). Continuous current at TC=25℃ is silicon limited
Electrical Characteristic
(at Tj = 25 °C, unless otherwise specified)
Parameter
Symbol
Value
min.
typ.
max.
Unit
Test Condition
Static Characteristic
Drain-source breakdown
voltage
Gate threshold voltage
Zero gate voltage drain
current
Gate-source leakage
current
BV
DSS
V
GS(th )
I
DSS
100
1.4
115
1.8
-
2.2
V
V
V
GS
=0V, I
D
=250uA
V
DS
=V
GS
,I
D
=250uA
V
DS
=100V,V
GS
=0V
-
-
I
GSS
-
-
Drain-source on-state
resistance
R
DS(on)
-
-
-
Transconductance
g
fs
-
0.05
-
10
11.0
16.7
14.3
20.1
70.8
1
10
100
13.2
20.0
17.2
24.1
-
S
mΩ
nA
µA
T
j
=25°C
T
j
=125°C
V
GS
=±20V,V
DS
=0V
V
GS
=10V, I
D
=50A
T
j
=100°C
V
GS
=4.5V, I
D
=50A
T
j
=100°C
V
DS
=5V,I
D
=50A
Dynamic Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Gate Total Charge
Gate-Source charge
Gate-Drain charge
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Gate resistance
C
iss
C
oss
C
rss
Q
G
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
R
G
809
139
11
-
-
-
-
-
-
-
0.8
1618
277
22
28
7
5
30
81
24
7
1.6
2427
416
44
42
10
7
45
122
36
11
2.4
Ω
V
GS
=V
DS
=0V, f=1MHz
ns
V
GS
=10V, V
DD
=50V,
R
G_ext
=2.7Ω
nC
V
GS
=10V, V
DS
=50V,
I
D
=50A, f=1MHz
pF
V
GS
=0V, V
DS
=50V,
f=1MHz
©China Resources Microelectronics (Chongqing) Limited
Page 2
CRSD130N10L2
华润微电子(重庆)有限公司
SkyMOS2 N-MOSFET 100V, 11.0mΩ, 65A
Body Diode Characteristic
Parameter
Body Diode Forward
Voltage
Body Diode Reverse
Recovery Time
Body Diode Reverse
Recovery Charge
Symbol
Value
min.
-
-
-
typ.
0.87
80
198
max.
1
-
-
Unit
V
ns
nC
Test Condition
V
GS
=0V,I
SD
=20A
V
SD
t
rr
Q
rr
I
F
=50A,
dI/dt=100A/µs
©China Resources Microelectronics (Chongqing) Limited
Page 3
CRSD130N10L2
华润微电子(重庆)有限公司
SkyMOS2 N-MOSFET 100V, 11.0mΩ, 65A
Typical Performance Characteristics
Fig 1: Output Characteristics
50
50
Fig 2: Transfer Characteristics
V
DS
=5V
40
10V
40
4.5V
3.5V
I
D
(A)
I
D
(A)
30
30
20
3.0V
20
125°C
25°C
10
10
V
GS
=2.5V
0
0
1
2
3
4
5
0
0
1
2
3
4
5
V
DS
(V)
V
GS
(V)
16.0
Fig 3: Rds(on) vs Drain Current and
Gate Voltage
V
GS
=4.5V
Fig 4: Rds(on) vs Gate Voltage
40
35
30
I
D
=50A
14.0
R
DS(on)
(m )
R
DS(on)
(m )
12.0
25
20
15
V
GS
=10V
125°C
10.0
25°C
8.0
10
5
6.0
5
15
25
35
45
0
2
4
6
8
10
I
D
(A)
V
GS
(V)
Fig 5: Rds(on) vs. Temperature
2.2
2.1
2.0
Fig 6: Capacitance Characteristics
2000
Ciss
C - Capacitance (PF)
1.9
R
DS(on)
_Normalized
1.8
1.7
1.6
1.5
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
25
50
V
GS
=10V
I
D
=50A
V
GS
=4.5V
I
D
=50A
1500
1000
500
V
GS
=0V
f=1MHz
Coss
Crss
0
75
100
125
150
0
20
40
60
80
100
Tj - Junction Temperature (°C)
V
DS
(V)
©China Resources Microelectronics (Chongqing) Limited
Page 4
CRSD130N10L2
华润微电子(重庆)有限公司
Fig 7: Gate Charge Characteristics
10
SkyMOS2 N-MOSFET 100V, 11.0mΩ, 65A
Fig 8: Body-diode Forward
Characteristics
10
8
I
S
- Diode Current(A)
V
DS
=50V
I
D
=50A
V
GS
(V)
125˚C
25˚C
1
6
4
2
0
0
10
20
30
40
0.1
0
0.2
0.4
0.6
0.8
1
Qg (nC)
V
SD
- Diode Forward Voltage(V)
Fig 9: Power Dissipation
110
100
90
80
Fig 10: Drain Current Derating
70
60
50
P
tot
(W)
I
D
(A)
70
60
50
40
30
20
10
0
0
25
50
75
100
125
150
40
30
20
10
0
0
25
50
75
100
125
150
175
V
GS
≥10V
T
C
- Case Temperature (°C)
T
C
- Case Temperature (°C)
Fig 11: Safe Operating Area
Limited by
Rds(on)
100
10us
100us
I
D
(A)
10
1ms
10ms
1
0.1
Single pulse
Tc=25˚C
0.1
1
10
100
DC
0.01
V
DS
(V)
©China Resources Microelectronics (Chongqing) Limited
Page 5
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