CRST058N12N,CRSS055N12N
华润微电子(重庆)有限公司
Features
• Uses CRM(CQ) advanced SkyMOS3 technology
• Extremely low on-resistance R
DS(on)
• Excellent Q
g
xR
DS(on)
product(FOM)
• Qualified according to JEDEC criteria
Applications
• Motor control and drive
• Battery management
• UPS (Uninterrupible Power Supplies)
SkyMOS3 N-MOSFET 120V, 4.8mΩ, 130A
Product Summary
V
DS
R
DS(on)
I
D
120V
4.8mΩ
130A
100% Avalanche Tested
100% DVDS Tested
100% Avalanche Tested
CRST058N12N
CRSS055N12N
Package Marking and Ordering Information
Part #
CRST058N12N
CRSS055N12N
Marking
CRST058N12N
CRSS055N12N
Package
TO-220
TO-263
Packing
Tube
Tube
Reel Size
N/A
N/A
Tape Width
N/A
N/A
Qty
50pcs
50pcs
Absolute Maximum Ratings
Parameter
Drain-source voltage
Continuous drain current
T
C
= 25°C (Silicon limit)
T
C
= 25°C (Package limit)
T
C
= 100°C (Silicon limit)
Pulsed drain current (T
C
= 25°C, t
p
limited by T
jmax
)
Avalanche energy, single pulse (L=0.5mH, Rg=25Ω)
[1]
Gate-Source voltage
Power dissipation (T
C
= 25°C)
Operating junction and storage temperature
I
D pulse
E
AS(Note 1)
V
GS
P
tot
T
j
,
T
stg
I
D
134
180
85
536
196
±20
202
-55...+150
A
mJ
V
W
°C
A
Symbol
V
DS
Value
120
Unit
V
※.
Notes:1.EAS is FT Monitoring tested at starting Tj = 25℃, L = 0.5mH, IAS = 28A, Vgs=10V.
©China Resources Microelectronics (Chongqing) Limited
Page 1
CRST058N12N,CRSS055N12N
华润微电子(重庆)有限公司
Thermal Resistance
Parameter
Thermal resistance, junction – case.
Thermal resistance, junction – ambient(min. footprint)
Symbol
R
thJC
R
thJA
Max
0.62
62.5
Unit
°C/W
SkyMOS3 N-MOSFET 120V, 4.8mΩ, 130A
Electrical Characteristic
(at Tj = 25 °C, unless otherwise specified)
Parameter
Symbol
Value
min.
typ.
max.
Unit
Test Condition
Static Characteristic
Drain-source breakdown
voltage
Gate threshold voltage
BV
DSS
V
GS(th )
120
2
-
3
-
4
V
V
V
GS
=0V, I
D
=250uA
V
DS
=V
GS
,I
D
=250uA
V
DS
=120V,V
GS
=0V
Zero gate voltage drain
current
Gate-source leakage
current
Drain-source on-state
resistance
Transconductance
I
DSS
-
-
I
GSS
-
-
-
-
1
100
100
7.4
R
DS(on)
-
-
g
fs
-
4.8
4.5
110.7
5.8
5.5
-
S
mΩ
nA
µA
T
j
=25°C
T
j
=125°C
V
GS
=±20V,V
DS
=0V
V
GS
=10V, I
D
=60A
TO-220
TO-263
V
DS
=5V,I
D
=60A
Dynamic Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Gate Total Charge
Gate-Source charge
Gate-Drain charge
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Gate resistance
C
iss
C
oss
C
rss
Q
G
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
R
G
-
-
-
-
-
-
-
-
-
-
-
5548
758.7
29
80.07
33.99
16.55
20.9
105.2
45.4
102.9
1.8
-
-
-
-
-
-
-
-
-
-
-
Ω
ns
V
DS
=60V
I
D
=60A
R
G
=2.7Ω
V
GS
=10V;
V
GS
=0V, V
DS
=0V,
f=1MHz
nC
V
GS
=10V, V
DS
=60V,
I
D
=70A, f=1MHz
pF
V
GS
=0V, V
DS
=60V,
f=1MHz
©China Resources Microelectronics (Chongqing) Limited
Page 2
CRST058N12N,CRSS055N12N
华润微电子(重庆)有限公司
Body Diode Characteristic
Parameter
Body Diode Forward
Voltage
Body Diode Reverse
Recovery Time
Body Diode Reverse
Recovery Charge
Symbol
SkyMOS3 N-MOSFET 120V, 4.8mΩ, 130A
Value
min.
-
-
-
typ.
0.93
80.1
161.2
max.
1.3
-
-
Unit
V
ns
nC
Test Condition
V
GS
=0V,I
SD
=60A
V
SD
t
rr
Q
rr
I
SD
=60A, V
GS
=0V,
dIF/dt=100A/us;
©China Resources Microelectronics (Chongqing) Limited
Page 3
CRST058N12N,CRSS055N12N
华润微电子(重庆)有限公司
SkyMOS3 N-MOSFET 120V, 4.8mΩ, 130A
Typical Performance Characteristics
360
320
280
240
Fig 1: Output Characteristics
10V
9V
8V
7V
6.5V
I
D
(A)
Fig 2: Transfer Characteristics
140
130
120
110
100
90
80
70
60
V
DS
=5V
I
D
(A)
200
160
120
80
40
0
0
1
2
3
150°C
25°C
5.5V
50
40
30
20
V
GS
=4.5V
4
5
10
0
0
1
2
3
4
5
6
7
V
DS
(V)
V
GS
(V)
6.0
5.7
5.4
Fig 3: Rds(on) vs Drain Current and
Gate Voltage
Fig 4: Rds(on) vs Gate Voltage
30
I
D
=70A
26
22
18
14
10
6
R
DS(on)
(m )
5.1
4.8
4.5
4.2
3.9
3.6
3.3
3.0
20
40
60
80
100
120
140
160
V
GS
=10V
R
DS(on)
(m )
150°C
25°C
2
3
4
5
6
7
8
9
10
I
D
(A)
V
GS
(V)
Fig 5: Rds(on) vs. Temperature
2.5
10000
Fig 6: Capacitance Characteristics
R
DS(on)
_Normalized
C - Capacitance (PF)
2.2
V
GS
=10V
I
D
=70A
1000
Ciss
1.9
Coss
1.6
1.3
100
1.0
10
25
50
75
100
125
150
0
Crss
V
GS
=0V
f=1MHz
20
40
60
80
100
120
0.7
Tj - Junction Temperature (°C)
V
DS
(V)
©China Resources Microelectronics (Chongqing) Limited
Page 4
CRST058N12N,CRSS055N12N
华润微电子(重庆)有限公司
SkyMOS3 N-MOSFET 120V, 4.8mΩ, 130A
Fig 8: Body-diode Forward
Characteristics
1000
Fig 7: Gate Charge Characteristics
10
8
V
DS
=60V
I
D
=70A
100
V
GS
(V)
6
10
4
150˚C
25˚C
1
2
0
0
10
20
30
40
50
60
70
80
0.1
0
0.2
0.4
0.6
0.8
1
1.2
Qg (nC)
Fig 9: Power Dissipation
250
Fig 10: Drain Current Derating
160
140
200
120
P
tot
(W)
150
I
D
(A)
100
80
60
40
100
50
20
0
0
25
50
75
100
125
150
0
0
V
GS
≥10V
25
50
75
100
125
150
175
Tc - Case Temperature (°C)
Tc - Case Temperature (°C)
1000
Fig 11: Safe Operating Area
Limited by Rds(on)
1us
10us
100
100us
I
D
(A)
10
1ms
10ms
DC
1
Single pulse
Tc=25˚C
0.1
0.1
1
10
100
1000
V
DS
(V)
©China Resources Microelectronics (Chongqing) Limited
Page 5
测试/测量
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
