CRST048N07N,CRSS045N07N
华润微电子(重庆)有限公司
Features
• Uses CRM(CQ) advanced SkyMOS1 technology
• Extremely low on-resistance R
DS(on)
• Excellent Q
g
xR
DS(on)
product(FOM)
• Qualified according to JEDEC criteria
Applications
• Motor control and drive
• Battery management
• UPS (Uninterrupible Power Supplies)
SkyMOS1 N-MOSFET 70V, 3.8mΩ, 120A
Product Summary
V
DS
R
DS(on)
I
D
70V
3.8mΩ
120A
100% Avalanche Tested
100% DVDS Tested
CRST048N07N
CRSS045N07N
Package Marking and Ordering Information
Part #
CRST048N07N
CRSS045N07N
Marking
Package
TO-220
TO-263
Packing
Tube
Tube
Reel Size
N/A
N/A
Tape Width
N/A
N/A
Qty
50pcs
50pcs
-
-
Absolute Maximum Ratings
Parameter
Drain-source voltage
Continuous drain current
T
C
= 25°C (Silicon limit)
T
C
= 25°C (Package limit)
T
C
= 100°C (Silicon limit)
Pulsed drain current (T
C
= 25°C, t
p
limited by T
jmax
)
Avalanche energy, single pulse (L=0.5mH, Rg=25Ω)
Gate-Source voltage
Power dissipation (T
C
= 25°C)
Operating junction and storage temperature
I
D pulse
E
AS
V
GS
P
tot
T
j
,
T
stg
I
D
137
120
87
480
169
±20
147
-55...+150
A
mJ
V
W
°C
A
Symbol
V
DS
Value
70
Unit
V
※.
Notes:1.EAS is tested at starting Tj = 25℃, L = 0.5mH, IAS = 26.0A, VGS = 10V.
©China Resources Microelectronics (Chongqing) Limited
Page 1
CRST048N07N,CRSS045N07N
华润微电子(重庆)有限公司
Thermal Resistance
Parameter
Thermal resistance, junction – case.
Thermal resistance, junction – ambient(min. footprint)
Symbol
R
thJC
R
thJA
Max
0.85
62
Unit
°C/W
SkyMOS1 N-MOSFET 70V, 3.8mΩ, 120A
Electrical Characteristic
(at Tj = 25 °C, unless otherwise specified)
Parameter
Symbol
Value
min.
typ.
max.
Unit
Test Condition
Static Characteristic
Drain-source breakdown
voltage
Gate threshold voltage
BV
DSS
V
GS(th )
70
2
-
3
-
4
V
V
V
GS
=0V, I
D
=250uA
V
DS
=V
GS
,I
D
=250uA
V
DS
=70V,V
GS
=0V
Zero gate voltage drain
current
Gate-source leakage
current
Drain-source on-state
resistance
Transconductance
I
DSS
-
-
I
GSS
-
0.02
-
±10
1
10
±100
7.4
R
DS(on)
-
-
g
fs
3.8
3.5
110.6
4.7
4.3
-
S
mΩ
nA
µA
T
j
=25°C
T
j
=125°C
V
GS
=±20V,V
DS
=0V
V
GS
=10V, I
D
=60A
TO-220
TO-263
V
DS
=5V,I
D
=60A
Dynamic Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Gate Total Charge
Gate-Source charge
Gate-Drain charge
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Gate resistance
C
iss
C
oss
C
rss
Q
G
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
R
G
-
-
-
-
-
-
-
-
-
-
-
3994.6
1108
53.6
61
22.2
13.5
15.2
89.6
38.93
100.7
2.2
-
-
-
-
-
-
-
-
-
-
-
Ω
V
GS
=0V, V
DS
=0V,
f=1MHz
ns
V
GS
=10V, V
DD
=35V,
R
G_ext
=2.7Ω
nC
V
GS
=10V, V
DS
=35V,
I
D
=60A, f=1MHz
pF
V
GS
=0V, V
DS
=35V,
f=1MHz
©China Resources Microelectronics (Chongqing) Limited
Page 2
CRST048N07N,CRSS045N07N
华润微电子(重庆)有限公司
SkyMOS1 N-MOSFET 70V, 3.8mΩ, 120A
Body Diode Characteristic
Parameter
Body Diode Forward
Voltage
Body Diode Reverse
Recovery Time
Body Diode Reverse
Recovery Charge
Symbol
Value
min.
-
-
-
typ.
0.94
66
58.3
max.
1.3
-
-
Unit
V
ns
nC
Test Condition
V
GS
=0V,I
SD
=60A
V
SD
t
rr
Q
rr
I
F
=60A,
dI/dt=100A/µs
©China Resources Microelectronics (Chongqing) Limited
Page 3
CRST048N07N,CRSS045N07N
华润微电子(重庆)有限公司
SkyMOS1 N-MOSFET 70V, 3.8mΩ, 120A
Typical Performance Characteristics
Fig 1: Output Characteristics
320
9V→
8V
7V
10V
280
240
200
160
120
80
40
0
0
1
2
3
4
5
Fig 2: Transfer Characteristics
200
180
V
DS
=5V
6.5V
I
D
(A)
160
140
I
D
(A)
120
100
80
60
40
5.5V
125°C
25°C
V
GS
=4.5V
20
0
0
1
2
3
4
5
6
7
8
V
DS
(V)
V
GS
(V)
6.0
Fig 3: Rds(on) vs Drain Current and
Gate Voltage
Fig 4: Rds(on) vs Gate Voltage
20
I
D
=60A
16
5.0
R
DS(on)
(m )
R
DS(on)
(m )
12
4.0
V
GS
=10V
8
3.0
125°C
4
25°C
2.0
10
20
30
40
50
60
70
80
90
100
0
4
5
6
7
8
9
10
I
D
(A)
V
GS
(V)
Fig 5: Rds(on) vs. Temperature
1.8
1.7
1.6
Fig 6: Capacitance Characteristics
10000
V
GS
=10V
I
D
=60A
C - Capacitance (PF)
1000
Ciss
R
DS(on)
_Normalized
1.5
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
25
50
75
100
125
150
Coss
100
Crss
V
GS
=0V
f=1MHz
10
0
10
20
30
40
50
60
70
Tj - Junction Temperature (°C)
V
DS
(V)
©China Resources Microelectronics (Chongqing) Limited
Page 4
CRST048N07N,CRSS045N07N
华润微电子(重庆)有限公司
SkyMOS1 N-MOSFET 70V, 3.8mΩ, 120A
Fig 8: Body-diode Forward
Characteristics
100
Fig 7: Gate Charge Characteristics
10
8
I
S
- Diode Current(A)
V
DS
=35V
I
D
=60A
V
GS
(V)
10
6
125˚C
25˚C
1
4
2
0.1
0
0
5
10
15
20
25
30
35
40
45
50
55
60
65
0.01
0
0.2
0.4
0.6
0.8
1
1.2
1.4
Qg (nC)
V
SD
- Diode Forward Voltage(V)
Fig 9: Power Dissipation
160
140
120
Fig 10: Drain Current Derating
160
140
120
P
tot
(W)
I
D
(A)
100
80
60
40
20
0
0
25
50
75
100
125
150
100
80
60
40
20
0
0
25
50
75
100
125
150
175
V
GS
≥10V
Tc - Case Temperature (°C)
Tc - Case Temperature (°C)
Fig 11: Safe Operating Area
1000
1us
Limited by Rds(on)
100
10us
100us
1ms
I
D
(A)
10
10ms
DC
1
Single pulse
Tc=25˚C
0.1
0.1
1
10
100
V
DS
(V)
©China Resources Microelectronics (Chongqing) Limited
Page 5
嵌入式系统
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
