CRSM055N10L2
华润微电子(重庆)有限公司
Features
• Uses CRM(CQ) advanced SkyMOS2 technology
• Extremely low on-resistance R
DS(on)
• Excellent Q
g
xR
DS(on)
product(FOM)
• Qualified according to JEDEC criteria
Applications
• Motor control and drive
• Battery management
• UPS (Uninterrupible Power Supplies)
SkyMOS2 N-MOSFET 100V, 4.8mΩ, 80A
Product Summary
V
DS
R
DS(on)
I
D
100V
4.8mΩ
80A
100% Avalanche Tested
CRSM055N10L2
Package Marking and Ordering Information
Part #
CRSM055N10L2
Marking
Package
DFN 5X6
Packing
Tube
Reel Size
N/A
Tape Width
N/A
Qty
50pcs
-
Absolute Maximum Ratings
Parameter
Drain-source voltage
Continuous drain current
T
C
= 25°C (Silicon limit)
T
C
= 25°C (Package limit)
T
C
= 100°C (Silicon limit)
Pulsed drain current (T
C
= 25°C, t
p
limited by T
jmax
)
Avalanche energy, single pulse (L=0.5mH, Rg=25Ω)
[1]
Gate-Source voltage
Power dissipation (T
C
= 25°C)
Operating junction and storage temperature
※.
Notes:1.EAS was tested at starting Tj = 25℃, ID = 34A.
Symbol
V
DS
Value
100
111
80
70
320
289
±20
125
-55...+150
Unit
V
I
D
A
I
D pulse
E
AS
V
GS
P
tot
T
j
,
T
stg
A
mJ
V
W
°C
©China Resources Microelectronics (Chongqing) Limited
Page 1
CRSM055N10L2
华润微电子(重庆)有限公司
Thermal Resistance
Parameter
Thermal resistance, junction – case.
Thermal resistance, junction – ambient(min. footprint)
Symbol
R
thJC
R
thJA
Max
1.00
52
Unit
°C/W
SkyMOS2 N-MOSFET 100V, 4.8mΩ, 80A
Electrical Characteristic
(at Tj = 25 °C, unless otherwise specified)
Parameter
Symbol
Value
min.
typ.
max.
Unit
Test Condition
Static Characteristic
Drain-source breakdown
voltage
Gate threshold voltage
BV
DSS
V
GS(th )
100
1.2
-
1.6
-
2
V
V
V
GS
=0V, I
D
=250uA
V
DS
=V
GS
,I
D
=250uA
V
DS
=100V,V
GS
=0V
Zero gate voltage drain
current
Gate-source leakage
current
Drain-source on-state
resistance
Transconductance
I
DSS
-
-
I
GSS
R
DS(on)
g
fs
-
-
-
0.02
-
±1
4.8
5.7
110
1
10
±10
5.5
6.8
-
nA
mΩ
S
µA
T
j
=25°C
T
j
=125°C
V
GS
=±20V,V
DS
=0V
V
GS
=10V, I
D
=30A
V
GS
=4.5V, I
D
=24A
V
DS
=5V,I
D
=30A
Dynamic Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Gate Total Charge
Gate-Source charge
Gate-Drain charge
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Gate resistance
C
iss
C
oss
C
rss
Q
G
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
R
G
-
-
-
-
-
-
-
-
-
-
-
3514
741
34
60
13
9.8
12.8
51.5
43.5
97.7
1.32
-
-
-
-
-
-
-
-
-
-
-
Ω
V
GS
=0V, V
DS
=0V,
f=1MHz
ns
V
GS
=10V, V
DD
=50V,
R
G_ext
=2.7Ω
nC
V
GS
=10V, V
DS
=50V,
I
D
=30A, f=1MHz
pF
V
GS
=0V, V
DS
=50V,
f=1MHz
©China Resources Microelectronics (Chongqing) Limited
Page 2
CRSM055N10L2
华润微电子(重庆)有限公司
Body Diode Characteristic
Parameter
Body Diode Forward
Voltage
Body Diode Reverse
Recovery Time
Body Diode Reverse
Recovery Charge
Symbol
SkyMOS2 N-MOSFET 100V, 4.8mΩ, 80A
Value
min.
-
-
-
typ.
0.83
65.2
138.76
max.
1.1
-
-
Unit
V
ns
nC
Test Condition
V
GS
=0V,I
SD
=30A
V
SD
t
rr
Q
rr
I
F
=30A,
dI/dt=300A/µs
©China Resources Microelectronics (Chongqing) Limited
Page 3
CRSM055N10L2
华润微电子(重庆)有限公司
SkyMOS2 N-MOSFET 100V, 4.8mΩ, 80A
Typical Performance Characteristics
Fig 1: Output Characteristics
240
200
160
120
Fig 2: Transfer Characteristics
V
DS
=5V
10V
6.5V
4.5V
5.5V
100
80
I
D
(A)
I
D
(A)
120
60
V
GS
=3.5V
80
40
40
125°C
25°C
20
V
GS
=2.5V
0
0
1
2
3
4
5
0
0
1
2
3
4
5
V
DS
(V)
V
GS
(V)
Fig 3: Rds(on) vs Drain Current and
Gate Voltage
8.0
7.5
7.0
Fig 4: Rds(on) vs Gate Voltage
30
25
I
D
=30A
R
DS(on)
(m )
R
DS(on)
(m )
20
6.5
V
GS
=4.5V
6.0
5.5
5.0
4.5
4.0
10
20
30
40
50
60
70
15
150°C
V
GS
=10V
10
5
25°C
2
3
4
5
6
7
8
9
10
0
I
D
(A)
V
GS
(V)
Fig 5: Rds(on) vs. Temperature
10.0
9.5
9.0
8.0
7.5
7.0
6.5
6.0
5.5
5.0
4.5
4.0
3.5
3.0
25
50
75
100
125
150
Fig 6: Capacitance Characteristics
10000
Ciss
V
GS
=4.5V
C - Capacitance (PF)
R
DS(on)
_Normalized
8.5
1000
Coss
V
GS
=10V
100
Crss
V
GS
=0V
f=1MHz
10
0
10
20
30
40
50
60
70
80
90
Tj - Junction Temperature (°C)
V
DS
(V)
©China Resources Microelectronics (Chongqing) Limited
Page 4
CRSM055N10L2
华润微电子(重庆)有限公司
SkyMOS2 N-MOSFET 100V, 4.8mΩ, 80A
Fig 8: Body-diode Forward
Characteristics
Fig 7: Gate Charge Characteristics
10
1000
8
I
S
- Diode Current(A)
V
DS
=50V
I
D
=30A
100
V
GS
(V)
6
10
150˚C
25˚C
4
1
2
0
0
5
10
15
20
25
30
35
40
45
50
55
60
0.1
0
0.2
0.4
0.6
0.8
1
1.2
1.4
Qg (nC)
V
SD
- Diode Forward Voltage(V)
Fig 9: Power Dissipation
140
120
100
Fig 10: Drain Current Derating
90
80
70
60
P
tot
(W)
80
60
40
20
0
0
25
50
75
100
125
150
I
D
(A)
50
40
30
20
10
0
0
25
50
75
100
125
150
175
V
GS
≥10V
Tc - Case Temperature (°C)
Tc - Case Temperature (°C)
Fig 11: Safe Operating Area
1000
100
Limited by
Rds(on)
1us
10us
100us
I
D
(A)
1ms
10
10ms
DC
1
Single pulse
Tc=25˚C
0.1
0.1
1
10
100
V
DS
(V)
©China Resources Microelectronics (Chongqing) Limited
Page 5
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