CRTS260N10N
华润微电子(重庆)有限公司
Features
• Uses CRM(CQ) advanced Trench technology
• Extremely low on-resistance R
DS(on)
• Excellent Q
g
xR
DS(on)
product(FOM)
• Qualified according to JEDEC criteria
Trench N-MOSFET 100V, 16mΩ, 59A
Product Summary
V
DS
R
DS(on) typ.
I
D
100V
16mΩ
59A
100% DVDS Tested
Applications
• Motor control and drive
• Battery management
• UPS (Uninterrupible Power Supplies)
100% Avalanche Tested
Package Marking and Ordering Information
Part #
CRTS260N10N
Marking
Package
TO-263
Packing
Reel
Reel Size
N/A
Tape Width
N/A
Qty
1000pcs
CRTS260N10N
Absolute Maximum Ratings
Parameter
Drain-source voltage
Continuous drain current
T
C
= 25°C (Silicon limit)
T
C
= 25°C (Package limit)
T
C
= 100°C (Silicon limit)
Pulsed drain current (T
C
= 25°C, t
p
limited by T
jmax
)
Avalanche energy, single pulse (L=0.5mH, Rg=25Ω)
Gate-Source voltage
Power dissipation (T
C
= 25°C)
Operating junction and storage temperature
Soldering temperature, wave soldering only allowed at leads
(1.6mm from case for 10s)
I
D pulse
E
AS
V
GS
P
tot
T
j
,
T
stg
T
sold
I
D
59
80
38
236
64
±25
151
-55...+150
260
A
mJ
V
W
°C
°C
A
Symbol
V
DS
Value
100
Unit
V
©China Resources Microelectronics (Chongqing) Limited
Page 1
CRTS260N10N
华润微电子(重庆)有限公司
Thermal Resistance
Parameter
Thermal resistance, junction – case.
Thermal resistance, junction – ambient(min. footprint)
Symbol
R
thJC
R
thJA
Max
0.83
91
Unit
°C/W
Trench N-MOSFET 100V, 16mΩ, 59A
Electrical Characteristic
(at Tj = 25 °C, unless otherwise specified)
Parameter
Symbol
Value
min.
typ.
max.
Unit
Test Condition
Static Characteristic
Drain-source breakdown
voltage
Gate threshold voltage
BV
DSS
V
GS(th )
100
2.4
-
3
-
3.6
V
V
V
GS
=0V, I
D
=250uA
V
DS
=V
GS
,I
D
=250uA
V
DS
=100V,V
GS
=0V
Zero gate voltage drain
current
Gate-source leakage
current
Drain-source on-state
resistance
Transconductance
I
DSS
-
-
I
GSS
-
0.5
-
10
1
100
100
nA
µA
T
j
=25°C
T
j
=150°C
V
GS
=25V,V
DS
=0V
V
GS
=10V, I
D
=22A,
R
DS(on)
-
-
g
fs
-
16
35
49
20
42
-
S
mΩ
Tj=25°C
Tj=150°C
V
DS
=5V,I
D
=22A
Dynamic Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Gate Total Charge
Gate-Source charge
Gate-Drain charge
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Gate resistance
C
iss
C
oss
C
rss
Q
G
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
R
G
-
-
-
-
-
-
-
-
-
-
-
1685
141
74
39
10
14
12
42
25
36
1.2
-
-
-
-
-
-
-
-
-
-
-
Ω
V
GS
=0V, V
DS
=0V,
f=1MHz
ns
V
GS
=10V, V
DD
=50V,
R
G_ext
=2.7Ω
nC
V
GS
=10V, V
DS
=50V,
I
D
=22A, f=1MHz
pF
V
GS
=0V, V
DS
=50V,
f=1MHz
©China Resources Microelectronics (Chongqing) Limited
Page 2
CRTS260N10N
华润微电子(重庆)有限公司
Body Diode Characteristic
Parameter
Body Diode Forward
Voltage
Body Diode Continuous
Forward Current
Body Diode Reverse
Recovery Time
Body Diode Reverse
Recovery Charge
Symbol
Trench N-MOSFET 100V, 16mΩ, 59A
Value
min.
-
typ.
0.9
max.
1.3
59
-
-
37
49
-
-
Unit
V
A
ns
nC
Test Condition
V
GS
=0V,I
SD
=22A
T
C
= 25°C
V
SD
I
S
t
rr
Q
rr
I
F
=22A, dI/dt=100A/µ
s
*The value of R
thJA
is measured by placing the device in a still air box which is one cubic foot.
©China Resources Microelectronics (Chongqing) Limited
Page 3
CRTS260N10N
华润微电子(重庆)有限公司
Trench N-MOSFET 100V, 16mΩ, 59A
Typical Performance Characteristics
Fig 1: Output Characteristics
100
100
Fig 2: Transfer Characteristics
V
DS
=5V
80
80
10V
6.0V
I
D
(A)
5.5V
40
I
D
(A)
60
60
40
20
V
GS
=5.0V
4.5V
20
150°C
25°C
0
0
2
4
6
8
10
0
2
3
4
5
6
7
V
DS
(V)
V
GS
(V)
19
Fig 3: Rds(on) vs Drain Current and
Gate Voltage
Fig 4: Rds(on) vs Gate Voltage
35
33
I
D
=22A
18
31
R
DS(on)
(mΩ)
R
DS(on)
(mΩ)
29
27
25
23
21
17
16
V
GS
=10V
25°C
15
19
17
14
0
12
24
36
48
60
15
4
5
6
7
8
9
10
I
D
(A)
V
GS
(V)
Fig 5: Rds(on) vs. Temperature
2.5
Fig 6: Capacitance Characteristics
10000
C - Capacitance (PF)
2.0
V
GS
=10V
I
D
=22A
R
DS(on)
_Normalized
Ciss
1000
1.5
1.0
Coss
100
0.5
V
GS
=0V
f=1MHz
10
-50
-25
0
25
50
75
100
125
150
0
20
40
Crss
0.0
60
80
100
Tj - Junction Temperature (°C)
V
DS
(V)
©China Resources Microelectronics (Chongqing) Limited
Page 4
CRTS260N10N
华润微电子(重庆)有限公司
Trench N-MOSFET 100V, 16mΩ, 59A
Fig 8: Body-diode Forward
Characteristics
Fig 7: Gate Charge Characteristics
10
9
8
7
1000
I
S
- Diode Current(A)
100
V
GS
(V)
6
5
4
3
2
1
0
0
8
V
DS
=50V
I
D
=22A
10
150˚C
25˚C
1
0.1
16
24
32
40
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
Qg (nC)
V
SD
- Diode Forward Voltage(V)
Fig 9: Power Dissipation
160
140
120
Fig 10: Drain Current Derating
70
60
50
P
tot
(W)
I
D
(A)
100
80
60
40
20
0
0
25
50
75
100
125
150
40
30
20
10
0
0
25
50
75
100
125
150
175
V
GS
≥10V
Tc - Case Temperature (°C)
Tc - Case Temperature (°C)
Fig 11: Safe Operating Area
1000
100
Limited by
Rds(on)
1us
10us
I
D
(A)
100us
10
1ms
10ms
1
DC
Single pulse
Tc=25˚C
0.1
0.1
1
10
100
V
DS
(V)
©China Resources Microelectronics (Chongqing) Limited
Page 5
Microchip MCU
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