Silicon N-Channel Power MOSFET
CS10N06 BE-G
General Description
：
CS10N06 BE-G, the silicon N-channel Enhanced
VDMOSFETs, is obtained by the high density Trench
technology which reduce the conduction loss, improve switching
performance and enhance the avalanche energy. This device is
suitable for use as a load switch and PWM applications.. The
package form is SOP-8, which accords with the RoHS standard.
V
DSS
I
D
P
D
R
DS(ON)Typ
60
10
3.1
12.5
V
A
W
R
○
mΩ
Features：
Fast Switching
Low ON Resistance(
Rdson≤16 mΩ
)
Low Gate Charge
Low Reverse transfer capacitances
100% Single Pulse avalanche energy Test
Applications
：
Power switch circuit of adaptor and charger;
LED backlight driver.
Absolute
（T
A
= 25℃ unless otherwise specified）
Symbol
V
DSS
I
D
I
DM
V
GS
E
AS
P
D
T
J
，T
stg
a1
Parameter
Drain-to-Source Voltage
Continuous Drain Current
Continuous Drain Current T
A
= 100 °
C
Pulsed Drain Current
Gate-to-Source Voltage
Rating
60
10
6.3
40
±
20
121
3.1
0.025
150，–55 to 150
Units
V
A
A
A
V
mJ
W
W/℃
℃
a2
Avalanche Energy
Power Dissipation
Derating Factor above 25°
C
Operating Junction and Storage Temperature Range
W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D .
P ag e 1 of 10
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CS10N06 BE-G
Electrical Characteristics
（T
A
= 25℃ unless otherwise specified）
：
OFF Characteristics
Symbol
V
DSS
I
DSS
I
GSS(F)
I
GSS(R)
Parameter
Drain to Source Breakdown Voltage
Drain to Source Leakage Current
Gate to Source Forward Leakage
Gate to Source Reverse Leakage
R
○
Test Conditions
V
GS
=0V, I
D
=250µA
V
DS
=60V, V
GS
= 0V,
T
A
= 25℃
V
DS
=48V, V
GS
= 0V,
T
A
= 125℃
V
GS
=20V
V
GS
=-20V
Rating
Min.
Typ.
Max.
Units
V
µA
nA
nA
60
--
--
--
--
--
--
--
--
--
--
1
100
100
-100
ON Characteristics
Symbol
R
DS(ON)
V
GS(TH)
Parameter
Drain-to-Source On-Resistance
V
GS
=4.5V,I
D
=8A
Test Conditions
V
GS
=10V,I
D
=10A
Rating
Min.
--
--
1.0
Typ.
12.5
15
1.5
Max.
16
20
2.0
Units
mΩ
mΩ
V
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= 250µA
Pulse width tp≤300µs,δ≤2%
Dynamic Characteristics
Symbol
R
g
C
iss
C
oss
C
rss
Parameter
Gate resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V
GS
= 0V V
DS
=30V
f = 1.0MHz
Test Conditions
V
GS
=0V, V
DS
=0V, f=1MHz
Rating
Min.
--
--
--
--
Typ.
3.2
1876
135
102
Max.
--
--
--
--
Units
Ω
pF
Resistive Switching Characteristics
Symbol
t
d(ON)
tr
t
d(OFF)
t
f
Q
g
Q
gs
Q
gd
Parameter
Turn-on Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain (“Miller”)Charge
I
D
=10A V
DD
=30V
V
GS
= 10V
V
GS
=10V,Rg=3Ω
V
DD
=30V,I
D
=10A
Test Conditions
Rating
Min.
--
--
--
--
--
--
--
Typ.
13.1
25.1
60.8
9.2
43.45
5.7
11.9
Max.
--
--
--
--
--
--
--
Units
ns
nC
W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D .
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CS10N06 BE-G
Source-Drain Diode Characteristics
Symbol
I
S
I
SM
V
SD
trr
Qrr
Parameter
Continuous Source Current (Body Diode)
T
A
= 25℃
R
○
Test
Conditions
Rating
Min.
--
--
Typ.
--
--
--
29
21
Max.
10
40
1.2
--
--
Units
A
A
V
ns
nC
Maximum Pulsed Current (Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
I
S
=10A,V
GS
=0V
di/dt=100A/us
IF=10A
--
--
--
Pulse width tp≤300µs,δ≤2%
Symbol
R
θ
JA
a1
a2
Parameter
Junction-to-Ambient
Max.
40
Units
℃/W
：Repetitive
rating; pulse width limited by maximum junction temperature
：L=0.5mH,V
DD
=30V,I
AS
=22A Start T
J
=25℃
a3
：Recommend
soldering temperature defined by IPC/JEDEC J-STD 020
W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D .
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CS10N06 BE-G
Characteristics Curve：
R
○
Figure 1. Maximum Safe Operating Area
Figure 2. Maximum Power Dissipation vs Ambient Temperature
Figure 3. Maximum Continuous Drain Current vs
Ambient Temperature
vs Drain Current
Figure 4. Typical output Characteristics
Figure 5 Maximum Effective Thermal Impedance , Junction to Ambient
W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D .
P ag e 4 of 10
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CS10N06 BE-G
`
R
○
Figure 6 Typical Transfer Characteristics
Figure 7 Typical Body Diode Transfer Characteristics
Figure 8. Drain-to-Source On Resistance vs Drain Current
Figure 9. Normalized On Resistance vs Junction Temperature
Figure10. Normalized Threshold Voltage vs
Junction Temperature
Figure 11. Normalized Breakdown Voltage vs
Junction Temperature
P ag e 5 of 10
W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D .
2 0 1 9 V0 1
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