CRST065N08N, CRSS063N08N
华润微电子(重庆)有限公司
Features
• Uses CRM(CQ) advanced SkyMOS1 technology
• Extremely low on-resistance R
DS(on)
• Excellent Q
g
xR
DS(on)
product(FOM)
• Qualified according to JEDEC criteria
Applications
• Motor control and drive
• Battery management
• UPS (Uninterrupible Power Supplies)
SkyMOS1 N-MOSFET 85V, 5.6mΩ, 80A
Product Summary
V
DS
R
DS(on)
I
D
85V
5.6mΩ
80A
100% Avalanche Tested
CRST065N08N
CRSS063N08N
Package Marking and Ordering Information
Part #
CRST065N08N
CRSS063N08N
Marking
Package
TO-220
TO-263
Packing
Tube
Tube
Reel Size
N/A
N/A
Tape Width
N/A
N/A
Qty
50pcs
50pcs
-
-
Absolute Maximum Ratings
Parameter
Drain-source voltage
Continuous drain current
T
C
= 25°C (Silicon limit)
T
C
= 25°C (Package limit)
T
C
= 100°C (Silicon limit)
Pulsed drain current (T
C
= 25°C, t
p
limited by T
jmax
)
Avalanche energy, single pulse (L=0.5mH, Rg=25Ω)
Gate-Source voltage
Power dissipation (T
C
= 25°C)
Operating junction and storage temperature
I
D pulse
E
AS(Note 1)
V
GS
P
tot
T
j
,
T
stg
I
D
121
80
77
320
110
±20
164
-55...+150
A
mJ
V
W
°C
A
Symbol
V
DS
Value
85
Unit
V
※.
Notes:1.EAS is tested at starting Tj = 25℃, L = 0.5mH, IAS = 21A, VGS = 10V.
IAS(max)=42A;EAS(max)=441mJ under above Conditions;
©China Resources Microelectronics (Chongqing) Limited
Page 1
CRST065N08N, CRSS063N08N
华润微电子(重庆)有限公司
Thermal Resistance
Parameter
Thermal resistance, junction – case.
Thermal resistance, junction – ambient(min. footprint)
Symbol
R
thJC
R
thJA
Max
0.76
65
Unit
°C/W
SkyMOS1 N-MOSFET 85V, 5.6mΩ, 80A
Electrical Characteristic
(at Tj = 25 °C, unless otherwise specified)
Parameter
Symbol
Value
min.
typ.
max.
Unit
Test Condition
Static Characteristic
Drain-source breakdown
voltage
Gate threshold voltage
BV
DSS
V
GS(th )
85
2
97
3
-
4
V
V
V
GS
=0V, I
D
=250uA
V
DS
=V
GS
,I
D
=250uA
V
DS
=80V,V
GS
=0V
Zero gate voltage drain
current
Gate-source leakage
current
Drain-source on-state
resistance
Transconductance
I
DSS
-
-
I
GSS
-
0.05
-
10
1
5
100
nA
µA
T
j
=25°C
T
j
=125°C
V
GS
=±20V,V
DS
=0V
V
GS
=10V, I
D
=50A
R
DS(on)
-
-
g
fs
-
5.6
5.4
70
6.5
6.3
-
mΩ
S
TO-220
TO-263
V
DS
=5V,I
D
=40A
Dynamic Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Gate Total Charge
Gate-Source charge
Gate-Drain charge
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Gate resistance
C
iss
C
oss
C
rss
Q
G
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
R
G
-
-
-
-
-
-
-
-
-
-
-
2860
790
19
47
13
11
16
31
36
19
3.3
-
-
-
-
-
-
-
-
-
-
-
Ω
ns
Vds=42.5V
Id=10A
Rg=3.5Ω
Vgs=10V;
(Note 2,3)
V
GS
=0V, V
DS
=0V,
f=1MHz
nC
V
GS
=10V, V
DS
=40V,
I
D
=50A, f=1MHz
pF
V
GS
=0V, V
DS
=42.5V,
f=1MHz
©China Resources Microelectronics (Chongqing) Limited
Page 2
CRST065N08N, CRSS063N08N
华润微电子(重庆)有限公司
Body Diode Characteristic
Parameter
Body Diode Forward
Voltage
Body Diode Reverse
Recovery Time
Body Diode Reverse
Recovery Charge
Symbol
SkyMOS1 N-MOSFET 85V, 5.6mΩ, 80A
Value
min.
-
-
-
typ.
0.9
56
54
max.
1.4
-
-
Unit
V
ns
nC
Test Condition
V
GS
=0V,I
SD
=50A
V
SD
t
rr
Q
rr
IS=30A, VGS=0V,
dIF/dt=100A/us;
※.
Notes
2.Pulse Test : Pulse Width ≤ 300us, duty cycle ≤ 2%.
3.Essentially independent of operating temperature.
©China Resources Microelectronics (Chongqing) Limited
Page 3
CRST065N08N, CRSS063N08N
华润微电子(重庆)有限公司
SkyMOS1 N-MOSFET 85V, 5.6mΩ, 80A
Typical Performance Characteristics
Fig 1: Output Characteristics
100
100
Fig 2: Transfer Characteristics
V
DS
=5V
80
10V
80
6.5V
6.0V
I
D
(A)
5.5V
40
I
D
(A)
60
60
125°C
40
25°C
20
V
GS
=5.0V
0
0
1
2
3
4
5
20
0
0
1
V
DS
(V)
V
GS
(V)
7.0
Fig 3: Rds(on) vs Drain Current and
Gate Voltage
Fig 4: Rds(on) vs Gate Voltage
10
9
I
D
=50A
6.0
8
R
DS(on)
(m )
R
DS(on)
(m )
5.0
7
6
5
4
V
GS
=10V
4.0
3.0
3
2.0
10
20
30
40
50
60
70
80
90
100
2
5
6
7
8
9
10
I
D
(A)
V
GS
(V)
Fig 5: Rds(on) vs. Temperature
2.0
1.8
10000
Fig 6: Capacitance Characteristics
R
DS(on)
_Normalized
1.6
1.4
1.2
1.0
0.8
0.6
0.4
25
50
75
100
125
150
175
C - Capacitance (PF)
V
GS
=10V
I
D
=50A
Ciss
1000
Coss
100
V
GS
=0V
f=1MHz
10
0
10
20
Crss
30
40
50
Tj - Junction Temperature (°C)
V
DS
(V)
©China Resources Microelectronics (Chongqing) Limited
Page 4
CRST065N08N, CRSS063N08N
华润微电子(重庆)有限公司
SkyMOS1 N-MOSFET 85V, 5.6mΩ, 80A
Fig 8: Body-diode Forward
Characteristics
Fig 7: Gate Charge Characteristics
10
8
V
DS
=40V
I
D
=50A
V
GS
(V)
6
125˚C
4
25˚C
2
0
0
10
20
30
40
50
60
0
0.2
Qg (nC)
Fig 9: Power Dissipation
180
160
140
120
Fig 10: Drain Current Derating
90
80
70
60
P
tot
(W)
I
D
(A)
100
80
60
40
20
0
0
25
50
75
100
125
150
50
40
30
20
10
0
0
25
50
75
100
125
150
175
V
GS
≥10V
Tc - Case Temperature (°C)
Tc - Case Temperature (°C)
Fig 11: Safe Operating Area
1000
1us
10us
100us
1ms
10
10ms
DC
1
100
Limited by
Rds(on)
I
D
(A)
Single pulse
Tc=25˚C
0.1
0.1
1
10
100
V
DS
(V)
©China Resources Microelectronics (Chongqing) Limited
Page 5
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