Silicon
N-Channel
Power
MOSFET
R
○
CS55N10 AQ3-G
General Description
：
CS55N10 AQ3-G, the silicon N-channel Enhanced
VDMOSFETs, is obtained by the high density Trench
technology which reduce the conduction loss, improve switching
performance and enhance the avalanche energy. This device is
suitable for use as a load switch and PWM applications. The
package form is PDFN5*6, which accords with the RoHS standard.
V
DSS
I
D
P
D
R
DS(ON)Typ
100
55
96
12
V
A
W
mΩ
Features：
l
Fast Switching
l
Low ON Resistance
(Rdson≤15
mΩ)
l
Low Gate Charge
l
Low Reverse transfer capacitances
l
100% Single Pulse avalanche energy Test
l
Halogen Free
Applications
：
Power switch circuit of adaptor and charger.
Absolute
（T
j
= 25℃ unless otherwise specified）
Symbol
V
DSS
I
D
I
DM
a1
Parameter
Drain-to-Source Voltage
Continuous Drain Current T
C
= 25
°C
Continuous Drain Current T
C
= 100
°C
Pulsed Drain Current T
C
= 25
°C
Gate-to-Source Voltage
Rating
100
55
35.8
220
±20
295.8
96
0.77
150，–55 to 150
Units
V
A
A
A
V
mJ
W
W/℃
℃
V
GS
E
AS
P
D
T
J
，T
stg
a2
Avalanche Energy
Power Dissipation T
C
= 25
°C
Derating Factor above 25°C
Operating Junction and Storage Temperature Range
W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D .
Pag e 1 of 1 0
2 0 1 9 V0 1
CS55N10 AQ3-G
Electrical Characteristics
（T
j
= 25
℃
unless otherwise specified）
：
OFF Characteristics
Symbol
V
DSS
I
DSS
I
GSS(F)
I
GSS(R)
Parameter
Drain to Source Breakdown Voltage
Drain to Source Leakage Current
Gate to Source Forward Leakage
Gate to Source Reverse Leakage
R
○
Test Conditions
V
GS
=0V, I
D
=250µA
V
DS
=100V, V
GS
= 0V,
Tj = 25℃
V
DS
=80V, V
GS
= 0V,
Tj = 125℃
V
GS
=20V
V
GS
=-20V
Rating
Min.
Typ.
Max.
Units
V
µA
nA
nA
100
--
--
--
--
--
--
--
--
--
--
1
100
100
-100
ON Characteristics
Symbol
Parameter
Test Conditions
V
GS
=10V,I
D
=19A
Rating
Min.
--
--
--
1.0
Typ.
12
13
15
1.9
Max.
15
16.5
19
3.0
Units
mΩ
mΩ
mΩ
V
R
DS(ON)
V
GS(TH)
Drain-to-Source On-Resistance
V
GS
=6V,I
D
=15A
V
GS
=4.5V,I
D
=12A
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= 250µA
Pulse width tp≤300µs,δ≤2%
Dynamic Characteristics
Symbol
R
g
C
iss
C
oss
C
rss
Parameter
Gate resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V
GS
= 0V V
DS
=50V
f = 1.0MHz
Test Conditions
V
GS
=0V, V
DS
=0V, f=1MHz
Rating
Min.
--
--
--
--
Typ.
0.77
5401
197
162
Max.
--
--
--
--
Units
Ω
pF
Resistive Switching Characteristics
Symbol
t
d(ON)
tr
t
d(OFF)
t
f
Q
g
Q
gs
Q
gd
Parameter
Turn-on Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain (“Miller”)Charge
I
D
=30A V
DD
=50V
V
GS
= 10V
V
GS
=10V，R
G
=2Ω
V
DD
=50V，I
D
=30A
Test Conditions
Rating
Min.
--
--
--
--
--
--
--
Typ.
23
15
78.5
10.4
112.65
17.3
30.95
Max.
--
--
--
--
--
--
--
Units
ns
nC
W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D .
Pag e 2 of 1 0
2 0 1 9 V0 1
CS55N10 AQ3-G
Source-Drain Diode Characteristics
Symbol
I
S
I
SM
V
SD
trr
Qrr
Parameter
Continuous Source Current (Body Diode)
Maximum Pulsed Current (Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
R
○
Test
Conditions
T
C
= 25
°C
I
S
=19A,V
GS
=0V
di/dt=100A/us
IF=30A
Rating
Min.
--
--
--
--
--
Typ.
--
--
--
57
126.4
Max.
55
220
1.2
--
--
Units
A
A
V
ns
nC
Pulse width tp≤300µs,δ≤2%
Symbol
R
θ
JC
R
θ
JA
a1
a2
Parameter
Junction-to-Case
Junction-to-Ambient
Max.
1.3
75
Units
℃/W
℃/W
：Repetitive
rating; pulse width limited by maximum junction temperature
：L=0.5mH,Ias=34.4A
Start T
J
=25℃
a3
：Recommend
soldering temperature defined by IPC/JEDEC J-STD 020
W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D .
Page 3 of 10
2 0 1 9 V0 1
CS55N10 AQ3-G
Characteristics Curve：
1000
120
100
R
○
100
P
D
,Power Dissipation,W
10μ
s
I
D
,Drain Current,A
80
10
100μ
s
Operation in This
Area
is Limited by R
DS(on)
60
1ms
DC
10ms
1
40
0.1
SINGLE PULSE
T
C
=25℃
T
J
=150℃
20
0.01
0.1
1
10
100
V
DS
,Drain-to-Source Voltage,V
0
0
25
50
75
100
125
150
T
C
,Case Temperature,℃
Figure 1
. Maximum Safe Operating Area
Figure 2. Maximum Power Dissipation vs
Case Temperature
70
Vgs=5V~10V
Vgs=4.5V
60
I
D
,Drain Current[A]
50
60
50
Vgs=4V
40
I
D
,Drain Current,A
40
30
30
20
20
10
Vgs=3.5V
Note:
1.250us Pulse
Test
2.Tc=25℃
0
0.5
1
1.5
2
10
0
25
50
75
100
125
150
T
C
,Case Temperature,℃
0
V
DS
,Drain-to-Source Voltage[V]
Figure 3. Maximum Continuous Drain Current
vs Case Temperature
10
Figure 4. Typical output Characteristics
D=1
ZθJC,Thermal Response[℃ /W]
1
0.5
0.2
0.1
0.1
0.05
0.02
0.01
0.01
Single Pulse
Notes:
1.Duty Cycle, D=t1/t2
2.T
JM
= P
DM
*R
θJA
+ T
A
0.0001
0.001
0.01
0.1
1
10
0.001
0.000001
0.00001
T , Rectangular Pulse Duration [sec]
Figure 5 Maximum Effective Thermal Impedance , Junction to Case
W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D .
Page 4 of 10
2 0 1 9 V0 1
CS55N10 AQ3-G
100
Note:
1.V
DS
=5V
2.250us Pulse Test
R
○
100
I
D
,Drain Current[A]
10
10
Is,Source Current[A]
Tj=150℃
1
Tj=150℃
1
Tj=25℃
Tj=25℃
0.1
0.1
0.01
1
2
3
4
5
0.01
0
0.2
0.4
0.6
0.8
1
1.2
V
GS
,Gate-to-Source Voltage[V]
V
SD
，
Source-to-Drain Voltage[V]
Figure 6 Typical Transfer Characteristics
Figure 7 Typical Body Diode Transfer
Characteristics
20
3
PULSED TEST
T
j
= 25℃
2.5
PULSED TEST
V
GS
= 10V
I
D
= 19A
R
DS(on),
Drain-to-Source On Resistance,mΩ
19
18
17
16
15
14
13
12
V
GS
= 6V
V
GS
= 4.5V
R
DS(on)
,(Normalized)
Drain-to-Source On Resistance
40
45
50
55
2
1.5
1
V
GS
= 10V
11
10
0
5
10
15
20
25
30
35
I
D
,Drain Current,A
0.5
0
-50
-25
0
25
50
75
100
125
150
T
J
,Junction Temperature(℃ )
Figure 8. Drain-to-Source On Resistance vs
Drain Current
1.3
1.2
1.1
V
GS
= V
DS
I
D
= 250μA
1.2
1.15
1.1
1.05
1
0.95
0.9
0.85
0.8
-50
0
50
100
150
Figure 9. Normalized On Resistance vs
Junction Temperature
1
0.9
0.8
0.7
0.6
0.5
0.4
T
J
,Junction Temperature(℃ )
B
VDSS
,(Normalized)
Drain-to-Source Breakdown Voltage
V
GS(th)
,(Normalized)
Threshold Voltage
-50
0
50
100
T
J
,Junction Temperature(℃ )
150
Figure10. Normalized Threshold Voltage vs
Junction Temperature
Figure 11. Normalized Breakdown Voltage vs
Junction Temperature
W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D .
Page 5 of 10
2 0 1 9 V0 1
NXP MCU
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