CRST046N14N, CRSS043N14N
华润微电子(重庆)有限公司
Features
• Uses CRM(CQ) advanced SkyMOS1 technology
• Extremely low on-resistance R
DS(on)
• Excellent Q
g
xR
DS(on)
product(FOM)
• Qualified according to JEDEC criteria
Applications
• Motor control and drive
• Battery management
• UPS (Uninterrupible Power Supplies)
SkyMOS1 N-MOSFET 135V, 3.5mΩ, 160A
Product Summary
V
DS
R
DS(on)
I
D
135V
3.5mΩ
160A
100% Avalanche Tested
CRST046N14N
CRSS043N14N
Package Marking and Ordering Information
Part #
CRST046N14N
CRSS043N14N
Marking
Package
TO-220
TO-263
Packing
Tube
Tube
Reel Size
N/A
N/A
Tape Width
N/A
N/A
Qty
50pcs
50pcs
-
-
Absolute Maximum Ratings
Parameter
Drain-source voltage
Continuous drain current
T
C
= 25°C (Silicon limit)
T
C
= 25°C (Package limit)
T
C
= 100°C (Silicon limit)
Pulsed drain current (T
C
= 25°C, t
p
limited by T
jmax
)
Avalanche energy, single pulse (L=0.5mH, Rg=25Ω)
Gate-Source voltage
Power dissipation (T
C
= 25°C)
Operating junction and storage temperature
※.
Notes:1.EAS is tested at starting Tj = 25℃, L = 0.5mH, IAS = 40A, VGS = 10V.
Symbol
V
DS
Value
135
174
160
105
640
400
±20
250
-55...+150
Unit
V
I
D
A
I
D pulse
E
AS
V
GS
P
tot
T
j
,
T
stg
A
mJ
V
W
°C
©China Resources Microelectronics (Chongqing) Limited
Page 1
CRST046N14N, CRSS043N14N
华润微电子(重庆)有限公司
Thermal Resistance
Parameter
Thermal resistance, junction – case.
Thermal resistance, junction – ambient(min. footprint)
Symbol
R
thJC
R
thJA
Max
0.50
60
Unit
°C/W
SkyMOS1 N-MOSFET 135V, 3.5mΩ, 160A
Electrical Characteristic
(at Tj = 25 °C, unless otherwise specified)
Parameter
Symbol
Value
min.
typ.
max.
Unit
Test Condition
Static Characteristic
Drain-source breakdown
voltage
Gate threshold voltage
BV
DSS
V
GS(th )
135
2.0
-
3.0
-
4.0
V
V
V
GS
=0V, I
D
=250uA
V
DS
=V
GS
,I
D
=250uA
V
DS
=108V,V
GS
=0V
Zero gate voltage drain
current
Gate-source leakage
current
I
DSS
-
-
I
GSS
-
0.1
10
10
1
100
100
nA
µA
T
j
=25°C
T
j
=125°C
V
GS
=±20V,V
DS
=0V
V
GS
=10V, I
D
=80A
-
Drain-source on-state
resistance
-
R
DS(on)
-
-
Transconductance
g
fs
3.8
3.5
91.8
4.8
4.4
-
3.5
3.2
4.4
4.1
mΩ
TO-220
TO-263
V
GS
=8V, I
D
=64A
mΩ
S
TO-220
TO-263
V
DS
=5V,I
D
=40A
Dynamic Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Gate Total Charge
Gate-Source charge
Gate-Drain charge
Turn-on delay time
Rise time
Turn-off delay time
Fall time
C
iss
C
oss
C
rss
Q
G
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
-
-
-
-
-
-
-
-
-
-
10371
892.7
35.0
139.3
52.6
23.6
29.2
110
82.2
105
-
-
-
-
-
-
-
-
-
-
ns
Vds=68V
Id=80A
Rg=2.7Ω
Vgs=10V;
(Note 2,3)
nC
V
GS
=10V, V
DS
=68V,
I
D
=50A, f=1MHz
pF
V
GS
=0V, V
DS
=68V,
f=1MHz
©China Resources Microelectronics (Chongqing) Limited
Page 2
CRST046N14N, CRSS043N14N
华润微电子(重庆)有限公司
Gate resistance
R
G
-
2.8
SkyMOS1 N-MOSFET 135V, 3.5mΩ, 160A
-
Ω
V
GS
=0V, V
DS
=0V,
f=1MHz
Body Diode Characteristic
Parameter
Body Diode Forward
Voltage
Body Diode Reverse
Recovery Time
Body Diode Reverse
Recovery Charge
Symbol
Value
min.
-
-
-
typ.
0.9
117.3
517.0
max.
1.4
-
-
Unit
V
ns
nC
Test Condition
V
GS
=0V,I
SD
=80A
V
SD
t
rr
Q
rr
I
SD
=80A, VGS=0V,
dIF/dt=100A/us;
©China Resources Microelectronics (Chongqing) Limited
Page 3
CRST046N14N, CRSS043N14N
华润微电子(重庆)有限公司
SkyMOS1 N-MOSFET 135V, 3.5mΩ, 160A
Typical Performance Characteristics
Fig 1: Output Characteristics
480
440
400
360
320
Fig 2: Transfer Characteristics
200
180
10V
8.0V
7.0V
6.5V
V
DS
=5V
160
140
I
D
(A)
280
240
200
160
120
80
40
0
0
1
2
3
4
5
I
D
(A)
120
100
80
60
40
5.5V
125°C
25°C
V
GS
=4.5V
20
0
0
1
2
3
4
5
6
7
8
V
DS
(V)
V
GS
(V)
5.0
4.7
4.4
Fig 3: Rds(on) vs Drain Current and
Gate Voltage
Fig 4: Rds(on) vs Gate Voltage
18
15
I
D
=80A
R
DS(on)
(m )
4.1
3.8
3.5
3.2
2.9
2.6
2.3
2.0
10
20
30
40
50
60
70
80
90
100
V
GS
=10V
R
DS(on)
(m )
12
9
6
3
0
4
5
6
7
8
9
10
125°C
25°C
I
D
(A)
V
GS
(V)
Fig 5: Rds(on) vs. Temperature
1.9
1.7
1.5
1.3
1.1
0.9
0.7
25
50
75
100
125
150
Fig 6: Capacitance Characteristics
10000
V
GS
=10V
I
D
=80A
C - Capacitance (PF)
Ciss
R
DS(on)
_Normalized
1000
Coss
100
Crss
V
GS
=0V
f=1MHz
0
20
40
60
80
100
120
10
Tj - Junction Temperature (°C)
V
DS
(V)
©China Resources Microelectronics (Chongqing) Limited
Page 4
CRST046N14N, CRSS043N14N
华润微电子(重庆)有限公司
SkyMOS1 N-MOSFET 135V, 3.5mΩ, 160A
Fig 8: Body-diode Forward
Characteristics
100
Fig 7: Gate Charge Characteristics
10
8
I
S
- Diode Current(A)
V
DS
=68V
I
D
=40A
V
GS
(V)
10
6
125˚C
1
25˚C
4
2
0.1
0
0
10 20 30 40 50 60 70 80 90 100 110120130 140150
0.01
0
0.2
0.4
0.6
0.8
1
1.2
1.4
Qg (nC)
V
SD
- Diode Forward Voltage(V)
Fig 9: Power Dissipation
300
Fig 10: Drain Current Derating
180
160
250
140
200
120
P
tot
(W)
I
D
(A)
100
80
150
100
60
40
V
GS
≥10V
50
20
0
0
25
50
75
100
125
150
0
0
25
50
75
100
125
150
175
Tc - Case Temperature (°C)
Tc - Case Temperature (°C)
Fig 11: Safe Operating Area
1000
1us
100
Limited by
Rds(on)
10us
100us
1ms
I
D
(A)
10
10ms
DC
1
Single pulse
Tc=25˚C
0.1
0.1
1
10
100
V
DS
(V)
©China Resources Microelectronics (Chongqing) Limited
Page 5
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