CR3416
华润微电子(重庆)有限公司
Features
• Uses CRM(CQ) advanced Trench MOS technology
• Extremely low on-resistance R
DS(on)
• Excellent Q
g
xR
DS(on)
product(FOM)
• Qualified according to JEDEC criteria
Applications
• Motor control and drive
• Battery management
• UPS (Uninterrupible Power Supplies)
Trench N-MOSFET 20V, 12mΩ, 8A
Product Summary
V
DS
R
DS(on) typ.
I
D
20V
12mΩ
8A
ESD Protected
100% Avalanche Tested
Package Marking and Ordering Information
Part #
CR3416
Marking
3416
Package
SOT23-3
Packing
Reel
Reel Size
N/A
Tape Width
N/A
Qty
3000pcs
Absolute Maximum Ratings
Parameter
Drain-source voltage
Continuous drain current
T
C
= 25°C (Silicon limit)
T
C
= 25°C (Package limit)
T
C
= 100°C (Silicon limit)
Pulsed drain current (T
C
= 25°C, t
p
limited by T
jmax
)
Avalanche energy, single pulse (L=0.1mH, Rg=25Ω)
Gate-Source voltage
ESD
Power dissipation (T
C
= 25°C)
Operating junction and storage temperature
I
D pulse
E
AS
V
GS
HBM
P
tot
T
j
,
T
stg
I
D
8
9
5
32
1.25
±8
2.5
2
-55...+150
A
mJ
V
KV
W
°C
Page 1
A
Symbol
V
DS
Value
20
Unit
V
©China Resources Microelectronics (Chongqing) Limited
CR3416
华润微电子(重庆)有限公司
Thermal Resistance
Parameter
Thermal resistance, junction – lead
Thermal resistance, junction – ambient(min. footprint)
Symbol
R
thJL
R
thJA
Max
80
125
Unit
°C/W
Trench N-MOSFET 20V, 12mΩ, 8A
Electrical Characteristic
(at Tj = 25 °C, unless otherwise specified)
Parameter
Symbol
Value
min.
typ.
max.
Unit
Test Condition
Static Characteristic
Drain-source breakdown
voltage
Gate threshold voltage
BV
DSS
V
GS(th )
20
0.4
-
0.65
-
1
V
V
V
GS
=0V, I
D
=250uA
V
DS
=V
GS
,I
D
=250uA
V
DS
=20V,V
GS
=0V
Zero gate voltage drain
current
Gate-source leakage
current
I
DSS
-
-
I
GSS
-
0.01
-
-
1
10
10
uA
µA
T
j
=25°C
T
j
=150°C
V
GS
=+/-8V,V
DS
=0V
V
GS
=4.5V, I
D
=6.5A,
-
Drain-source on-state
resistance
R
DS(on)
12
19
16
-
Transconductance
g
fs
-
31
14
15
24
20
40
-
S
mΩ
Tj=25°C
Tj=150°C
V
GS
=2.5V, I
D
=5A,
V
GS
=1.8V, I
D
=4A,
V
DS
=5V,I
D
=6.5A
Dynamic Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Gate Total Charge
Gate-Source charge
Gate-Drain charge
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Gate resistance
C
iss
C
oss
C
rss
Q
G
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
R
G
-
-
-
-
-
-
-
-
-
-
-
770
144
130
23.0
1.9
3.5
8.6
57
38
83
4.0
-
-
-
-
-
-
-
-
-
-
-
Ω
V
GS
=0V, V
DS
=0V,
f=1MHz
Page 2
ns
V
GS
=5V, V
DD
=10V,
R
G_ext
=3Ω, ID=6.5A,
nC
V
GS
=10V, V
DS
=10V,
I
D
=6.5A, f=1MHz
pF
V
GS
=0V, V
DS
=10V,
f=1MHz
©China Resources Microelectronics (Chongqing) Limited
CR3416
华润微电子(重庆)有限公司
Trench N-MOSFET 20V, 12mΩ, 8A
Body Diode Characteristic
Parameter
Body Diode Forward
Voltage
Body Diode Reverse
Recovery Time
Body Diode Reverse
Recovery Charge
Symbol
Value
min.
-
-
-
typ.
0.7
13
2.7
max.
1.3
-
-
Unit
V
ns
nC
Test Condition
V
GS
=0V,I
SD
=6.5A
V
SD
t
rr
Q
rr
I
F
=6.5A, dI/dt=100A/µ
s
©China Resources Microelectronics (Chongqing) Limited
Page 3
CR3416
华润微电子(重庆)有限公司
Trench N-MOSFET 20V, 12mΩ, 8A
Typical Performance Characteristics
Fig 1: Output Characteristics
20
20
Fig 2: Transfer Characteristics
V
DS
=5V
15
4.5V
15
2.5V
I
D
(A)
10
I
D
(A)
1.8V
V
GS
=1.5V
1V
10
150°C
5
5
25°C
0
4
5
0
1
2
3
0
0
1
2
3
V
DS
(V)
V
GS
(V)
40
Fig 3: Rds(on) vs Drain Current and
Gate Voltage
Fig 4: Rds(on) vs Gate Voltage
40
I
D
=6.5A
34
34
R
DS(on)
(mΩ)
R
DS(on)
(mΩ)
28
28
22
22
V
GS
=2.5V
16
16
150°C
25°C
10
V
GS
=4.5V
10
0
6
12
18
24
30
1
2
3
4
5
6
7
8
9
10
I
D
(A)
V
GS
(V)
Fig 5: Rds(on) vs. Temperature
1.8
1.6
Fig 6: Capacitance Characteristics
10000
R
DS(on)
_Normalized
1.4
1.2
1.0
0.8
0.6
0.4
-50
-25
0
25
50
75
100
125
150
C - Capacitance (PF)
V
GS
=4.5V
I
D
=6.5A
1000
Ciss
Coss
100
Crss
V
GS
=0V
f=1MHz
10
0
4
8
12
16
20
Tj - Junction Temperature (°C)
V
DS
(V)
©China Resources Microelectronics (Chongqing) Limited
Page 4
CR3416
华润微电子(重庆)有限公司
Trench N-MOSFET 20V, 12mΩ, 8A
Fig 8: Body-diode Forward
Characteristics
Fig 7: Gate Charge Characteristics
10
100
8
I
S
- Diode Current(A)
V
GS
(V)
10
6
150˚C
1
4
V
DS
=10V
I
D
=6.5A
25˚C
2
0
0
5
10
15
20
25
0.1
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
Qg (nC)
V
SD
- Diode Forward Voltage(V)
Fig 9: Power Dissipation
2
2
1
1
Fig 10: Drain Current Derating
9
8
7
6
P
tot
(W)
I
D
(A)
1
1
1
0
0
0
0
25
50
75
100
125
150
5
4
3
2
1
0
0
25
50
75
100
125
150
175
V
GS
≥10V
Tc - Case Temperature (°C)
Tc - Case Temperature (°C)
Fig 11: Safe Operating Area
10
Limited by
Rds(on)
10us
100us
1ms
1us
I
D
(A)
1
10ms
0.1
Single pulse
Tc=25˚C
0.01
0.1
1
10
DC
V
DS
(V)
100
©China Resources Microelectronics (Chongqing) Limited
Page 5
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