Silicon N-Channel Power MOSFET
HGQ011N03A-G
General Description：
HGQ011N03A-G, the silicon N-channel Enhanced VDMOSFETs, is
obtained by the high density Trench technology which reduce the
conduction loss, improve switching performance and enhance the
avalanche energy. This device is suitable for use as A load switch and
PWM applications. the package form is PDFN5*6, which accords with the
RoHS standard.
VDSS
ID
（Silicon
limited）
ID
（Package
limited）
PD
R
DS(ON)Typ
®
30
300
100
147
0.75
V
A
A
W
mΩ
Features：
●
Fast Switching
●
Low ON Resistance
●
Low Gate Charge
●
Low Reverse transfer capacitances
●
100% Single Pulse avalanche energy Test
●
Halogen Free
Applications
：
Power switch circuit of adaptor and charger.
Absolute
（T
j
= 25℃ unless otherwise specified）：
Symbol
V
DSS
Parameter
Drain-to-Source Voltage
Continuous Drain Current T
C
= 25 °
（Silicon
limited）
C
Rating
30
300
100
100
400
±
18
625
147
1.17
150，–55 to 150
Units
V
A
A
A
A
V
mJ
W
W/℃
℃
I
D
Continuous Drain Current T
C
= 25 °
(Package limited)
C
Continuous Drain Current T
C
= 100 °
(Package limited)
C
I
DM
a1
Pulsed Drain Current T
C
= 25 °
C
Gate-to-Source Voltage
V
GS
E
AS
P
D
a2
Avalanche Energy
Power Dissipation T
C
= 25 °
C
Derating Factor above 25°
C
T
J
，T
stg
Operating Junction and Storage Temperature Range
WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD.
Page 1 of 10
2020V01
HGQ011N03A-G
Electrical Characteristics
（Tj=
25℃ unless otherwise specified）：
OFF Characteristics
Symbol
V
DSS
Parameter
Drain to Source Breakdown Voltage
®
Test Conditions
V
GS
=0V, I
D
=250µA
VDS =30V, VGS= 0V,
Tj = 25℃
Rating
Min.
Typ.
Max.
Units
V
30
--
--
--
--
--
--
--
--
--
--
1
I
DSS
Drain to Source Leakage Current
VDS =24V, VGS= 0V,
Tj = 125℃
µA
100
100
-100
nA
nA
I
GSS(F)
I
GSS(R)
ON Characteristics
Symbol
Gate to Source Forward Leakage
Gate to Source Reverse Leakage
VGS=18V
VGS=-18V
Parameter
Test Conditions
VGS=10V,ID=19A
Rating
Min.
Typ.
Max.
Units
mΩ
mΩ
V
--
--
0.9
0.75
1.2
1.35
1
1.5
1.8
R
DS(ON)
Drain-to-Source On-Resistance
VGS=4.5V,ID=19A
V
GS(TH)
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= 250µA
Dynamic Characteristics
Symbol
R
g
C
iss
C
oss
C
rss
Parameter
Gate resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VGS = 0V
VDS = 15V
f = 1.0MHz
Test Conditions
V
GS
=0V, V
DS
=0V, f=1MHz
Rating
Min.
Typ.
Max.
Units
Ω
--
--
--
--
1.29
4849
3665
565
--
--
--
--
pF
Resistive Switching Characteristics
Symbol
t
d(ON)
tr
t
d(OFF)
t
f
Q
g
Q
gs
Q
gd
Parameter
Turn-on Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain (“Miller”)Charge
VGS = 10V
VDD=15V
Id=19A
VGS=10V
Rg=6Ω
VDD=15V
Id=50A
Test Conditions
Rating
Min.
Typ.
Max.
Units
--
--
--
--
--
--
--
20
20.4
72.8
23.6
92.5
10.7
24.6
--
--
ns
--
--
--
--
--
nC
WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD.
Page 2 of 10
2020V01
HGQ011N03A-G
Source-Drain Diode Characteristics
Symbol
I
S
I
SM
V
SD
trr
Qrr
Parameter
Continuous Source Current (Body Diode)
T
C
®
Rating
Min.
Typ.
Max.
Test Conditions
Units
A
A
V
ns
nC
--
= 25 °
C
--
--
--
83.2
116.48
100
400
1.2
--
--
Maximum Pulsed Current (Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
IS=19A,VGS=0V
--
--
--
--
IS=19A
di/dt=100A/us,
VGS=0V
Pulse width tp≤300µs,δ≤2%
Symbol
R
θJC
R
θJA
Parameter
Junction-to-Case
Junction-to-Ambient
Max.
0.85
62.5
Units
℃/W
℃/W
Notes:
a1：Repetitive rating; pulse width limited by maximum junction temperature
a2：L=0.5mH,Ias=50A Start TJ=25℃
a3：Recommend soldering temperature defined by IPC/JEDEC J-STD 020
WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD.
Page 3 of 10
2020V01
HGQ011N03A-G
Characteristics Curve：
1
1000
10μ
s
100
160
®
P
D
,Power Dissipation,W
140
120
100
80
60
40
20
0
0
25
50
75
100
125
T
C
,Case Temperature,℃
150
I
D
,Drain Current,A
100μ
s
Operation in This Area
is Limited by R
DS(on)
1ms
10ms
10
SINGLE PULSE
T
C
=25℃
T
J
=150℃
DC
1
0.1
1
10
100
V
DS
,Drain-to-Source Voltage,V
Figure 1 . Maximum Safe Operating Area
350
300
250
Figure 2. Maximum Power Dissipation vs Case Temperature
100
90
Vgs=4~10V
Vgs=3.5V
I
D
,Drain Current[A]
This Area
is Limited by Package
80
70
60
50
Vgs=3.0V
Note:
1.250us Pulse Test
2.Tc=25℃
I
D
,Drain Current,A
200
150
100
50
0
25
50
75
100
125
150
T
C
,Case Temperature,℃
40
30
20
10
0
0
0.5
1
1.5
2
Vgs=2.5V
V
DS
,Drain-to-Source Voltage[V]
Figure 4. Typical output Characteristics
Figure 3. Maximum Continuous Drain Current vs Case
Temperature
1
D=1
Z
θJC
,Thermal Response[℃/W]
0.5
0.1
0.2
0.1
0.05
0.02
0.01
0.01
Single Pulse
Notes:
1.Duty Cycle, D=t1/t2
2.T
JM
= P
DM
*R
θJA
+ T
A
0.0001
0.001
0.01
0.1
1
10
0.001
0.000001
0.00001
T , Rectangular Pulse Duration [sec]
Figure 5 Maximum Effective Thermal Impedance , Junction to Case
WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD.
Page 4 of 10
2020V01
HGQ011N03A-G
1
100
10
Tj=150℃
Tj=25
℃
0.1
0.01
0.001
0.0001
0.00001
1
1.5
2
2.5
3
Note:
1.V
DS
=5V
2.250us Pulse Test
®
1
100
Tj=150℃
10
Tj=25℃
1
I
D
,Drain Current[A]
1
Is,Source Current[A]
0.1
0
0.2
0.4
0.6
0.8
1
1.2
V
SD
，Source-to-Drain
Voltage[V]
V
GS
,Gate-to-Source Voltage[V]
Figure 6 Typical Transfer Characteristics
1.4
Figure 7 Typical Body Diode Transfer Characteristics
1.5
1.4
PULSED TEST
V
GS
= 10V/4.5V
I
D
= 19A
R
DS(on),
Drain-to-Source On
Resistance,mΩ
1.2
1.0
0.8
0.6
0.4
0.2
0.0
5
15
25
35
45
55
65
75
85
95
I
D
,Drain Current,A
PULSED TEST
T
j
= 25℃
V
GS
= 10V
R
DS(on)
,(Normalized)
Drain-to-Source On Resistance
V
GS
= 4.5V
1.3
1.2
1.1
1
0.9
0.8
-50
0
50
100
T
J
,Junction Temperature(℃)
150
Figure 8. Drain-to-Source On Resistance vs Drain Current
1.3
1.2
1.1
V
GS(th)
,(Normalized)
Threshold Voltage
Figure 9. Normalized On Resistance vs Junction Temperature
1.05
1.04
B
VDSS
,(Normalized)
Drain-to-Source Breakdown Voltage
V
GS
= V
DS
I
D
= 250μA
1.03
1.02
1.01
1
0.9
0.8
0.7
1
0.99
0.98
0.97
0.96
0.95
-50
0
50
100
T
J
,Junction Temperature(℃)
150
0.6
0.5
0.4
-50
0
50
100
150
T
J
,Junction Temperature(℃)
Figure10. Normalized Threshold Voltage vs Junction
Temperature
Figure 11. Normalized Breakdown Voltage vs Junction
Temperature
WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD.
Page 5 of 10
2020V01
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