Silicon N-Channel Power MOSFET
CS3710 B8
General Description
：
CS3710
B8,
the
silicon
N-channel
Enhanced
VDMOSFETs, is obtained by the self-aligned planar Technology
which reduce the conduction loss, improve switching
performance and enhance the avalanche energy. The transistor
can be used in various power switching circuit for system
miniaturization and higher efficiency. The package form is
TO-220AB, which accords with the RoHS standard.
V
DSS
I
D
P
D
R
DS(ON)Typ
100
80
250
14
R
○
V
A
W
mΩ
Features：
Fast Switching
Low ON Resistance
(Rdson≤23
mΩ)
Low Gate Charge
Low Reverse transfer capacitances
100% Single Pulse avalanche energy Test
Applications
：
Power switch circuit of adaptor and charger.
Absolute
（T
j
= 25℃ unless otherwise specified）
Symbol
V
DSS
I
D
I
DM
V
GS
E
AS
P
D
T
J
，T
stg
T
L
a1
Parameter
Drain-to-Source Voltage
Continuous Drain Current T
C
= 25 °
C
Continuous Drain Current T
C
= 100 °
C
Pulsed Drain Current T
C
= 25 °
C
Gate-to-Source Voltage
Rating
100
80
54.5
320
±
20
1036.8
250
2
150，–55 to 150
300
Units
V
A
A
A
V
mJ
W
W/℃
℃
℃
a2
Avalanche Energy
Power Dissipation T
C
= 25 °
C
Derating Factor above 25°
C
Operating Junction and Storage Temperature Range
Maximum Temperature for Soldering
W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D .
P ag e 1 of 10
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CS3710 B8
Electrical Characteristics
（T
j
= 25℃ unless otherwise specified）
：
OFF Characteristics
Symbol
V
DSS
I
DSS
I
GSS(F)
I
GSS(R)
Parameter
Drain to Source Breakdown Voltage
Drain to Source Leakage Current
Gate to Source Forward Leakage
Gate to Source Reverse Leakage
R
○
Test Conditions
V
GS
=0V, I
D
=250µA
V
DS
=100V, V
GS
= 0V,
Tj = 25℃
V
DS
=80V, V
GS
= 0V,
Tj = 125℃
V
GS
=20V
V
GS
=-20V
Rating
Min.
Typ.
Max.
Units
V
µA
nA
nA
100
--
--
--
--
--
--
--
--
--
--
1
100
100
-100
ON Characteristics
Symbol
R
DS(ON)
V
GS(TH)
Parameter
Drain-to-Source On-Resistance
Gate Threshold Voltage
Test Conditions
V
GS
=10V,I
D
=28A
V
DS
= V
GS
, I
D
= 250µA
Rating
Min.
--
2
Typ.
14
2.6
Max.
23
4
Units
mΩ
V
Pulse width tp≤300µs,δ≤2%
Dynamic Characteristics
Symbol
R
g
C
iss
C
oss
C
rss
Parameter
Gate resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V
GS
= 0V V
DS
=25V
f = 1.0MHz
Test Conditions
V
GS
=0V, V
DS
=0V, f=1MHz
Rating
Min.
--
--
--
--
Typ.
2.4
3901
541.7
22.5
Max.
--
--
--
--
Units
Ω
pF
Resistive Switching Characteristics
Symbol
t
d(ON)
tr
t
d(OFF)
t
f
Q
g
Q
gs
Q
gd
Parameter
Turn-on Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain (“Miller”)Charge
I
D
=28A V
DD
=50V
V
GS
= 10V
V
GS
=10V，R
G
=2.5Ω
V
DD
=50V，I
D
=28A
Test Conditions
Rating
Min.
--
--
--
--
--
--
--
Typ.
23.4
5.2
66
11
72
16.8
16
Max.
--
--
--
--
--
--
--
Units
ns
nC
Source-Drain Diode Characteristics
W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D .
P ag e 2 of 10
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CS3710 B8
Symbol
I
S
I
SM
V
SD
trr
Qrr
Parameter
Continuous Source Current (Body Diode)
Maximum Pulsed Current (Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
T
C
= 25 °
C
I
S
=57A,V
GS
=0V
di/dt=100A/us
I
s
=57A
R
○
Test
Conditions
Rating
Min.
--
--
--
--
--
Typ.
--
--
--
140
555
Max.
80
320
1.2
--
--
Units
A
A
V
ns
nC
Pulse width tp≤300µs,δ≤2%
Symbol
R
θ
JC
R
θ
JA
a1
a2
Parameter
Junction-to-Case
Junction-to-Ambient
Max.
0.5
62.5
Units
℃/W
℃/W
：Repetitive
rating; pulse width limited by maximum junction temperature
：L=0.5mH,Ias=64.4A
Start T
J
=25℃
W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D .
Page 3 of 10
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CS3710 B8
Characteristics Curve：
300
10μ
s
R
○
100
250
P
D
,Power Dissipation,W
100μ
s
I
D
,Drain Current,A
10
1ms
DC
10ms
200
150
1
Operation in This Area
is Limited by R
DS(on)
100
0.1
SINGLE PULSE
T
C
=25℃
50
0.01
0.1
1
10
100
V
DS
,Drain-to-Source Voltage,V
0
0
25
50
75
100
125
150
T
C
,Case Temperature,℃
Figure 1
90
. Maximum Safe Operating Area
70
Figure 2. Maximum Power Dissipation vs
Case Temperature
80
70
60
Vgs=5.0V~10V
50
I
D
,Drain Current,A
I
D
,Drain Current[A]
60
50
40
Vgs=4.5V
40
30
Vgs=4V
30
20
20
10
10
Note:
1.250us Pulse Test
2.Tc=25℃
0
25
50
75
100
125
150
T
C
,Case Temperature,℃
0
0
1
2
3
4
5
V
DS
,Drain-to-Source Voltage[V]
Figure 3. Maximum Continuous Drain Current
vs Case Temperature
Figure 4. Typical output Characteristics
1
D=1
0.5
ZθJC,Thermal Response[℃/W]
0.1
0.2
0.1
0.05
0.01
0.02
0.01
Single Pulse
0.001
Notes:
1.Duty Cycle, D=t1/t2
2.T
JM
= P
DM
*R
θJA
+ T
A
0.0001
0.000001
0.00001
0.0001
0.001
0.01
0.1
1
T , Rectangular Pulse Duration [sec]
Figure 5 Maximum Effective Thermal Impedance , Junction to Case
W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D .
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CS3710 B8
100
Note:
1.V
DS
=5V
2.250us Pulse Test
100
R
○
Is,Source Current[A]
10
I
D
,Drain Current[A]
10
Tj=150℃
Tj=25℃
1
1
Tj=150℃
Tj=25℃
0.1
0.01
0
1
2
3
4
5
0.1
0
0.2
0.4
0.6
0.8
1
1.2
V
GS
,Gate-to-Source Voltage[V]
V
SD
，Source-to-Drain
Voltage[V]
Figure 6 Typical Transfer Characteristics
Figure 7 Typical Body Diode Transfer
Characteristics
2.6
18
R
DS(on),
Drain-to-Source On Resistance,mΩ
17
16
PULSED TEST
T
j
= 25℃
2.4
2.2
R
DS(on)
,(Normalized)
Drain-to-Source On Resistance
2
1.8
1.6
1.4
V
GS
= 10V
I
D
= 28A
15
V
GS
= 10V
14
13
12
11
10
0
5
10
15
20
25
30
35
40
I
D
,Drain Current,A
1.2
1
0.8
0.6
0.4
0.2
0
-50
-25
0
25
50
75
100
125
150
T
J
,Junction Temperature(℃)
Figure 8. Drain-to-Source On Resistance vs
Drain Current
Figure 9. Normalized On Resistance vs
Junction Temperature
1.3
1.2
V
GS
= V
DS
I
D
= 250μA
1.16
1.2
1.14
1.1
B
VDSS
,(Normalized)
B
VDSS
,(Normalized)
Drain-to-Source Breakdown Voltage
Drain-to-Source Breakdown Voltage
1.12
1.15
1.1
1.08
1.1
1.06
1.04
1.05
1.02
V
GS(th)
,(Normalized)
Threshold Voltage
1
0.9
0.8
0.7
0.6
0.5
0.4
1
1
0.98
0.96
0.95
0.94
0.92
0.3
-50
-25
0
25
50
75
100
125
150
T
J
,Junction Temperature(℃)
0.9
0.9
-50
-100 -25 -50 0
0
25
50
50
75
100 100 150
125
200
150
T
T
J
,Junction Temperature(℃)
J
,Junction Temperature(℃)
Figure10. Normalized Threshold Voltage vs
Junction Temperature
Figure 11. Normalized Breakdown Voltage vs
Junction Temperature
W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D .
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