Silicon N-Channel Power MOSFET
CS25N10 A4
General Description
：
CS25N10
A4,
the
silicon
N-channel
Enhanced
VDMOSFETs, is obtained by the high density Trench
technology which reduce the conduction loss, improve switching
performance and enhance the avalanche energy. This device is
suitable for use as a load switch and PWM applications. The
package form is TO-252, which accords with the RoHS standard.
V
DSS
I
D
P
D
R
DS(ON)Typ
100
25
56.8
29
R
○
V
A
W
mΩ
Features：
Fast Switching
Low Gate Charge
Low Reverse transfer capacitances
100% Single Pulse avalanche energy Test
Applications
：
Power switch circuit of adaptor and charger.
Absolute
（T
J
= 25℃ unless otherwise specified）
Symbol
V
DSS
I
D
I
DM
V
GS
E
AS
P
D
T
J
，T
stg
a1
Parameter
Drain-to-Source Voltage
Continuous Drain Current T
C
= 25 °
C
Continuous Drain Current T
C
= 100 °
C
Pulsed Drain Current T
C
= 25 °
C
Gate-to-Source Voltage
Rating
100
25
18.5
100
±
20
118
56.8
0.45
150，–55 to 150
Units
V
A
A
A
V
mJ
W
W/℃
℃
a2
Avalanche Energy
Power Dissipation T
C
= 25 °
C
Derating Factor above 25°
C
Operating Junction and Storage Temperature Range
W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D .
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CS25N10 A4
Electrical Characteristics
（T
J
= 25℃ unless otherwise specified）
：
OFF Characteristics
Symbol
V
DSS
I
DSS
I
GSS(F)
I
GSS(R)
Parameter
Drain to Source Breakdown Voltage
Drain to Source Leakage Current
Gate to Source Forward Leakage
Gate to Source Reverse Leakage
R
○
Test Conditions
V
GS
=0V, I
D
=250µA
V
DS
=100V, V
GS
= 0V,
T
J
= 25℃
V
DS
=80V, V
GS
= 0V,
T
J
= 125℃
V
GS
=20V
V
GS
=-20V
Rating
Min.
Typ.
Max.
Units
V
µA
nA
nA
100
--
--
--
--
--
--
--
--
--
--
1
500
100
-100
ON Characteristics
Symbol
R
DS(ON)
V
GS(TH)
Parameter
Drain-to-Source On-Resistance
V
GS
=4.5V,I
D
=12A
Test Conditions
V
GS
=10V,I
D
=12A
Rating
Min.
--
1
Typ.
29
30.5
1.5
Max.
36
39
2
Units
mΩ
mΩ
V
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= 250µA
Pulse width tp≤300µs,δ≤2%
Dynamic Characteristics
Symbol
R
g
C
iss
C
oss
C
rss
Parameter
Gate resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V
GS
= 0V V
DS
=50V
f = 1.0MHz
Test Conditions
V
GS
=0V, V
DS
=0V, f=1MHz
Rating
Min.
--
--
--
--
Typ.
1.2
2359
94
76
Max.
--
--
--
--
Units
Ω
pF
Resistive Switching Characteristics
Symbol
t
d(ON)
tr
t
d(OFF)
t
f
Q
g
Q
gs
Q
gd
Parameter
Turn-on Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain (“Miller”)Charge
I
D
=13A V
DD
=80V
V
GS
= 10V
V
GS
=10V，R
G
=6Ω
V
DD
=50V，I
D
=13A
Test Conditions
Rating
Min.
--
--
--
--
--
--
--
Typ.
14
6.3
76
12.5
60
5.4
15.4
Max.
--
--
--
--
--
--
--
Units
ns
nC
W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D .
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CS25N10 A4
Source-Drain Diode Characteristics
Symbol
I
S
I
SM
V
SD
T
rr
Q
rr
Parameter
Continuous Source Current (Body Diode)
Maximum Pulsed Current (Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
T
C
= 25 °
C
I
S
=12A,V
GS
=0V
di/dt=100A/us
IF=20A
R
○
Test
Conditions
Rating
Min.
--
--
--
--
--
Typ.
--
--
--
40
68
Max.
25
100
1.2
--
--
Units
A
A
V
ns
nC
Pulse width tp≤300µs,δ≤2%
Symbol
R
θ
JC
R
θ
JA
a1
a2
Parameter
Junction-to-Case
Junction-to-Ambient
Max.
2.2
100
Units
℃/W
℃/W
：Repetitive
rating; pulse width limited by maximum junction temperature
：L=0.5mH,Id=21.7A,Start
T
J
=25℃
a3
：Recommend
soldering temperature defined by IPC/JEDEC J-STD 020
W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D .
Page 3 of 10
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CS25N10 A4
Characteristics Curve：
1000
60
R
○
100
50
P
D
,Power Dissipation,W
10μ
s
I
D
,Drain Current,A
40
10
100μ
s
30
1ms
1
DC
Operation in This
Area
is Limited by R
DS(on)
10ms
20
0.1
10
SINGLE PULSE
T
C
=25℃
T
J
=150℃
0.01
0
1
10
100
0
25
50
75
100
125
150
T
C
,Case Temperature,℃
0.1
V
DS
,Drain-to-Source Voltage,V
Figure 1
. Maximum Safe Operating Area
25
Figure 2. Maximum Power Dissipation vs
Case Temperature
Vgs=3.0V~10V
30
Note:
1.250us Pulse Test
2.Tc=25℃
25
20
I
D
,Drain Current,A
20
I
D
,Drain Current[A]
15
15
10
Vgs=2.5V
10
5
5
0
25
50
75
100
125
150
Vgs=2.0V
0
0
0.5
1
1.5
2
2.5
3
T
C
,Case Temperature,℃
V
DS
,Drain-to-Source Voltage[V]
Figure 3. Maximum Continuous Drain Current
vs Case Temperature
10
Figure 4. Typical output Characteristics
D=1
Z
θJC
,Thermal Response[℃/W]
1
0.5
0.2
0.1
0.05
0.1
0.02
0.01
0.01
Single Pulse
0.001
0.000001
0.00001
0.0001
0.001
0.01
0.1
1
10
T , Rectangular Pulse Duration [sec]
Figure 5 Maximum Effective Thermal Impedance , Junction to Case
W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D .
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CS25N10 A4
100
Note:
1.V
DS
=5V
2.250us Pulse Test
R
○
100
I
D
,Drain Current[A]
Is,Source Current[A]
10
Tj=150℃
1
10
Tj=150℃
Tj=25℃
0.1
1
Tj=25℃
0.1
0.01
1
1.5
2
2.5
3
V
SD
，Source-to-Drain
Voltage[V]
0
0.2
0.4
0.6
0.8
1
1.2
V
GS
,Gate-to-Source Voltage[V]
Figure 6 Typical Transfer Characteristics
Figure 7 Typical Body Diode Transfer
Characteristics
34.0
2.5
PULSED TEST
T
j
= 25℃
PULSED TEST
I
D
= 12A
R
DS(on),
Drain-to-Source On Resistance,mΩ
R
DS(on)
,(Normalized)
Drain-to-Source On Resistance
33.0
32.0
31.0
30.0
V
GS
= 10V
29.0
28.0
27.0
0.00
V
GS
= 4.5V
2
VGS=10V
1.5
VGS=4.5V
1
0.5
0
5.00
10.00
15.00
20.00
25.00
-50
0
50
100
150
I
D
,Drain Current,A
T
J
,Junction Temperature(℃)
Figure 8. Drain-to-Source On Resistance vs
Drain Current
1.3
1.2
1.1
Figure 9. Normalized On Resistance vs
Junction Temperature
1.15
V
GS
= V
DS
I
D
= 250μA
B
VDSS
,(Normalized)
Drain-to-Source Breakdown Voltage
1.1
V
GS(th)
,(Normalized)
Threshold Voltage
1
0.9
0.8
0.7
0.6
1.05
1
0.95
0.9
0.5
0.4
-50
0
50
100
150
T
J
,Junction Temperature(℃)
0.85
-50
0
50
100
150
T
J
,Junction Temperature(℃)
Figure10. Normalized Threshold Voltage vs
Junction Temperature
Figure 11. Normalized Breakdown Voltage vs
Junction Temperature
W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D .
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