Silicon
N-Channel
Power
MOSFET
R
○
CS50N12 A4
General Description
：
CS50N12
A4,
the
silicon
N-channel
Enhanced
VDMOSFETs, is obtained by advanced Trench Technology
which reduce the conduction
loss,
improve switching
V
D S S
I
D
P
D
(T
C
=25℃)
R
D S ( O N)Typ
120
50
83
15
V
A
W
mΩ
performance and enhance the avalanche energy. The transistor
can be used in various power switching circuit for system
miniaturization and higher efficiency. The package form is TO-252,
which accords with the RoHS standard.
Features：
Fast Switching
Low ON Resistance
(Rds on
≤ 2 0 m
Ω)
Low Gate Charge
Low Reverse transfer capacitances
(Typical:112.9pF)
100% Single Pulse avalanche energy Test
Applications
：
Pow er s witch circuit of adaptor and c harger.
Abs olute
（T
J
= 25℃ unles s otherwise s pecified）
：
Symbol
V
D S S
I
D
I
DM
E
A S
P
D
T
J
，
T
stg
a1
Parameter
D rain-to-Source Voltage
Cont inuous Drain Current T
C
= 25 °
C
Cont inuous Drain Current T
C
= 100 °
C
P uls ed Drain Current T
C
= 25 °
C
G at e-to-Source Voltage
Rating
120
50
31
200
±20
397. 8
83
0. 666
150， –55 to 150
Units
V
A
A
A
V
mJ
W
W/℃
℃
V
G S
a2
Single P ulse Avalanche Energy
P ow er D issipation T
C
= 25 °
C
D erating F actor above 25°
C
O p erating Junction and Storage Temperature Range
W UXI C H INA RES O URC ES H UAJ ING MIC RO ELEC TRO NIC S C O . , LTD.
Page 1 of 10
2020V01
CS50N12 A4
Electrical Characteristics
（
T
J
= 25℃ unles s otherwise s pecified）
：
OFF Characteristics
Symbol
V
D S S
I
D SS
I
G S S ( F)
I
G S S ( R)
Parameter
D rain to Source Breakdown Voltage
D rain to Source Leakage Current
G at e to Source Forward Leakage
G at e to Source Rev erse Leakage
R
○
Tes t Conditions
V
G S
= 0V, I
D
=250 µA
V
D S
= 120 V, V
GS
= 0V,
T
J
= 25℃
V
D S
= 96V, V
GS
= 0V,
T
J
= 12 5℃
V
G S
= +20V
V
G S
= -2 0V
Rating
M in.
Ty p .
M ax.
Units
V
µA
µA
nA
nA
120
--
--
--
--
--
--
--
--
--
--
1
100
100
-100
ON Characteristics
Symbol
R
D S ( O N)
V
G S ( TH )
Parameter
D rain-to-Source On-Resistance
V
G S
= 4.5V,I
D
=15 A
Tes t Conditions
V
G S
= 10V,I
D
=2 5A
Rating
M in.
Ty p .
M ax.
Units
mΩ
mΩ
V
--
1. 0
15
15. 5
--
20
23
2. 5
G at e Threshold Voltage
V
D S
= V
GS
, I
D
= 250µA
Puls e width tp≤300µ
s,δ≤2%
Dynamic Characteristics
Symbol
R
g
C
i s s
C
o s s
C
r s s
Parameter
G at e resistance
Inp ut Capacitance
O utput Capacitance
Reverse Transfer Capacitance
V
G S
= 0V， V
DS
=60 V
f= 1. 0MHz
Tes t Conditions
V
G S
= 0V, V
D S
=0V, f=1MHz
Rating
M in.
Ty p .
M ax.
Units
Ω
pF
--
--
--
--
1.2
4281
188.2
112.9
--
--
--
--
Re s istive Switching Characteristics
Symbol
t
d ( O N)
tr
t
d ( O FF )
t
f
Q
g
Q
g s
Q
g d
Parameter
T urn-on D elay Time
Ris e Time
T urn-Off Delay Time
F all Time
Tot al G ate Charge
G at e to Source Charge
G at e to D rain (“Miller”)Charge
V
G S
= 10V，V
DD
=96V
I
D
= 3 0A
V
G S
= 10V，R
G
=4.7Ω
V
D D
= 60 V， I
D
=30A
Tes t Conditions
Rating
M in.
Ty p .
M ax.
Units
--
--
--
--
--
--
--
20. 46
15
96. 88
105.46
96. 8
10. 2
25. 7
--
--
--
--
--
--
--
nC
ns
W UXI C H INA RES O URC ES H UAJ ING MIC RO ELEC TRO NIC S C O . , LTD.
Page 2 of 10
2020V01
CS50N12 A4
R
○
Source-Drain Diode Characteristics
Symbol
I
S
I
SM
V
S D
trr
Qrr
I
RRM
Parameter
Cont inuous Source Current (Body Diode)
M aximum P ulsed Current (Body Diode)
D iode Forward Voltage
Reverse Recovery Time
I
S
= 3 0A,T
j
= 25℃
Test Conditions
T
C
= 25 °
C
I
S
= 2 5A,V
GS
=0V
Rating
M in.
Ty p .
M ax.
Units
A
A
V
ns
nC
A
--
--
--
--
--
--
--
--
--
54
97.74
3.62
50
200
1. 2
--
--
--
Reverse Recovery Charge
Reverse Recovery Current
d I
F
/ dt =100A/us,
Puls e width tp≤300µ
s,δ≤2%
Symbol
R
θ
JC
R
θ
JA
Parameter
J unction-to-Case
J unction-to-Ambient
Max.
1. 5
100
Units
℃
/W
℃
/W
a1
：Calculated
continuous current bas ed on maximum allow able junct ion t emperature. Note that current
limit ations arising from heating of the device leads may occur w ith s ome lead mounting arrangements.
a2
：
L=0.5mH, I
D
= 39.89A, Start T
J
=25℃
a3
：
Recommend soldering t emperature defined by IPC/JEDEC J-STD 020
W UXI C H INA RES O URC ES H UAJ ING MIC RO ELEC TRO NIC S C O . , LTD.
Page 3 of 10
2020V01
CS50N12 A4
Characteristics Curve：
R
○
Figure1. Maximum Forward Bias Safe Operating Area
Figure2. Maximum Power Dissipation vs Case Temperature
Figure2. Maximum Power Dissipation vs Case Temperature
Figure3. Maximum Continuous Drain Current vs
Case Temperature
Figure 4. Typical Output
Characteristics
Figure5. Maximum Effective Transient Thermal Impedance, Junction-to-Case
W UXI C H INA RES O URC ES H UAJ ING MIC RO ELEC TRO NIC S C O . , LTD.
Page 4 of 10
2020V01
CS50N12 A4
R
○
Figure 6. Typical Transfer Characteristics
Figure 7. Typical Body Diode Transfer Characteristics
Figure 8. Drain-to-Source On Resistance vs Drain Current
Figure 9. Nomalized on Resistance vs Junction
Temperature
Figure 10. Nomalized Theshold Voltage vs
Junction Temperature
Figure 11. Nomalized Breakdown Voltage vs
Junction Temperature
Page 5 of 10
W UXI C H INA RES O URC ES H UAJ ING MIC RO ELEC TRO NIC S C O . , LTD.
2020V01
微控制器 MCU
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