CR3401
华润微电子(重庆)有限公司
Features
• Uses CRM(CQ) advanced Trench technology
• Extremely low on-resistance R
DS(on)
• Excellent Q
g
xR
DS(on)
product(FOM)
• Qualified according to JEDEC criteria
Applications
• Motor control and drive
• Battery management
• UPS (Uninterrupible Power Supplies)
Trench P-MOSFET -30V, 44mΩ, -4.7A
Product Summary
V
DS
R
DS(on) typ.
I
D
-30V
44mΩ
-4.7A
100% Avalanche Tested
Package Marking and Ordering Information
Part #
CR3401
Marking
Package
SOT23-3
Packing
Reel
Reel Size
N/A
Tape Width
N/A
Qty
3000pcs
3401
Absolute Maximum Ratings
Parameter
Drain-source voltage
Continuous drain current
T
C
= 25°C (Silicon limit)
T
C
= 25°C (Package limit)
T
C
= 100°C (Silicon limit)
Pulsed drain current (T
C
= 25°C, t
p
limited by T
jmax
)
Avalanche energy, single pulse (L=0.3mH, Rg=25Ω)
Gate-Source voltage
Power dissipation (T
C
= 25°C)
Operating junction and storage temperature
Soldering temperature, wave soldering only allowed at leads
(1.6mm from case for 10s)
I
D pulse
E
AS
V
GS
P
tot
T
j
,
T
stg
T
sold
I
D
-4.7
-8.5
-3.0
-19
5.4
±12
1.8
-55...+150
260
A
mJ
V
W
°C
°C
A
Symbol
V
DS
Value
-30
Unit
V
©China Resources Microelectronics (Chongqing) Limited
Page 1
CR3401
华润微电子(重庆)有限公司
Thermal Resistance
Parameter
Thermal resistance, junction – lead.
Thermal resistance, junction – ambient(min. footprint)
Symbol
R
thJL
R
thJA
Max
70
170
Unit
°C/W
Trench P-MOSFET -30V, 44mΩ, -4.7A
Electrical Characteristic
(at Tj = 25 °C, unless otherwise specified)
Parameter
Symbol
Value
min.
typ.
max.
Unit
Test Condition
Static Characteristic
Drain-source breakdown
voltage
Gate threshold voltage
BV
DSS
V
GS(th )
-30
-0.7
-
-
-1.6
V
V
V
GS
=0V, I
D
=-250uA
V
DS
=V
GS
,I
D
=-250uA
V
DS
=-30V,V
GS
=0V
Zero gate voltage drain
current
Gate-source leakage
current
I
DSS
-
-
I
GSS
-
-0.05
-0.1
-10
-1
-5
-100
nA
µA
T
j
=25°C
T
j
=150°C
V
GS
=-12V,V
DS
=0V
V
GS
=-10V, I
D
=-5A,
Drain-source on-state
resistance
R
DS(on)
-
44
66
-
Transconductance
g
fs
-
61
10
55
80
75
-
S
mΩ
Tj=25°C
Tj=150°C
V
GS
=-4.5V, I
D
=-4A,
V
DS
=-5V,I
D
=-5A
Dynamic Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Gate Total Charge
Gate-Source charge
Gate-Drain charge
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Gate resistance
C
iss
C
oss
C
rss
Q
G
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
R
G
-
-
-
-
-
-
-
-
-
-
-
492
64
55
10.0
2.1
2.1
6
27
16
30
6.0
-
-
-
-
-
-
-
-
-
-
-
Ω
V
GS
=0V, V
DS
=0V,
f=1MHz
Page 2
ns
V
GS
=-10V, V
DD
=-15V,
R
G_ext
=2.7Ω,ID=-5A
nC
V
GS
=-10V, V
DS
=-15V,
I
D
=-5A, f=1MHz
pF
V
GS
=0V, V
DS
=-15V,
f=1MHz
©China Resources Microelectronics (Chongqing) Limited
CR3401
华润微电子(重庆)有限公司
Trench P-MOSFET -30V, 44mΩ, -4.7A
Body Diode Characteristic
Parameter
Body Diode Forward
Voltage
Body Diode Continuous
Forward Current
Body Diode Reverse
Recovery Time
Body Diode Reverse
Recovery Charge
Symbol
Value
min.
-
typ.
-0.9
max.
-1.3
-4.7
-
-
11
4.2
-
-
Unit
V
A
ns
Test Condition
V
GS
=0V,I
SD
=-5A
T
C
= 25°C
V
SD
I
S
t
rr
Q
rr
I
F
=-5A, dI/dt=100A/µs
nC
*The value of R
thJA
is measured by placing the device in a still air box which is one cubic foot.
©China Resources Microelectronics (Chongqing) Limited
Page 3
CR3401
华润微电子(重庆)有限公司
Trench P-MOSFET -30V, 44mΩ, -4.7A
Typical Performance Characteristics
Fig 1: Output Characteristics
30
Fig 2: Transfer Characteristics
30
-10V
-7V
24
-4.5V
V
DS
=-5V
24
-I
D
(A)
-3.5V
12
-I
D
(A)
18
18
12
150°C
-3V
6
V
GS
=-2.5V
6
25°C
0
5
0
0
1
2
3
4
1
2
3
4
5
6
-V
DS
(V)
-V
GS
(V)
100
Fig 3: Rds(on) vs Drain Current and
Gate Voltage
Fig 4: Rds(on) vs Gate Voltage
160
90
140
I
D
=-5A
R
DS(on)
(mΩ)
R
DS(on)
(mΩ)
80
V
GS
=-4.5V
120
70
100
60
80
150°C
50
60
25°C
2
3
4
5
6
7
8
9
10
40
0
6
12
V
GS
=-10V
18
24
30
40
-I
D
(A)
-V
GS
(V)
Fig 5: Rds(on) vs. Temperature
1.8
1.6
Fig 6: Capacitance Characteristics
10000
R
DS(on)
_Normalized
1.4
1.2
1.0
0.8
0.6
0.4
-50
-25
0
25
50
75
100
125
150
175
C - Capacitance (PF)
V
GS
=-10V
I
D
=-5A
1000
C iss
100
Coss
V
GS
=0V
f=1MHz
Crss
10
0
6
12
18
24
30
Tj - Junction Temperature (°C)
-V
DS
(V)
©China Resources Microelectronics (Chongqing) Limited
Page 4
CR3401
华润微电子(重庆)有限公司
Trench P-MOSFET -30V, 44mΩ, -4.7A
Fig 8: Body-diode Forward
Characteristics
100
Fig 7: Gate Charge Characteristics
10
-I
S
- Diode Current(A)
8
10
-V
GS
(V)
6
V
DS
=-15V
I
D
=-5A
1
150˚C
4
0.1
25˚C
2
0.01
0
0
2
4
6
8
10
0.001
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
Qg (nC)
-V
SD
- Diode Forward Voltage(V)
Fig 9: Power Dissipation
2
2
2
1
Fig 10: Drain Current Derating
5
5
4
4
P
tot
(W)
1
1
1
1
0
0
0
0
25
50
75
100
125
150
I
D
(A)
3
3
2
2
1
1
0
0
25
50
75
100
125
150
175
V
GS
≥10V
Tc - Case Temperature (°C)
Tc - Case Temperature (°C)
Fig 11: Safe Operating Area
10
Limited by
Rds(on)
1us
10us
-I
D
(A)
100us
1
1ms
10ms
0.1
DC
Single pulse
Tc=25˚C
0.01
0.1
1
10
-V
DS
(V)
100
©China Resources Microelectronics (Chongqing) Limited
Page 5
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