LL101A/LL101B/LL101C
Schottky Barrier Diode
Features
1. Small surface mounting type.
2. High reliability.
3. Low reverse current and low forward voltage.
4. This diode is also available in the DO-35 case
with type designation SD101A, B, C.
Applications
HF-Detector, protection circuit, small battery charger,
power supplies, DC/DC converter for notebooks, etc.
Absolute Maximum Ratings
T
j
=25℃
Parameter
Peak inverse voltage
Test Conditions
Type
LL101A
LL101B
LL101C
Maximum single cycle surge
10
μS
square wave
Power dissipation
Storage temperature range
T
amb
=25℃
Symbol
V
RRM
V
RRM
V
RRM
I
FSM
P
V
T
stg
Value
60
50
40
2
400
-55~+150
Unit
V
V
V
A
mW
℃
Stresses exceeding maximum ratings may damage the device. Maximum ratings are stress ratings only. Functional operation above the
recommended operating conditions is not implied. Extended exposure to stresses above the recommended operating conditions may
affect device reliability.
Excel Semiconductor
www.excel-semi.com
FaxBack +86-512-67606917
Rev. 3g, 1-Sep-2009
1/3
LL101A/LL101B/LL101C
Electrical Characteristics
T
j
=25℃
Parameter
Forward voltage drop
Test Conditions
I
F
=1mA
Type
LL101A
LL101B
LL101C
I
F
=15mA
LL101A
LL101B
LL101C
Leakage current
V
R
=50V
V
R
=40V
V
R
=30V
Junction capacitance
V
R
=0V, f=1MHz
LL101A
LL101B
LL101C
LL101A
LL101B
LL101C
Reverse recovery time
I
F
= I
R
=5mA to 0.1I
R
t
rr
C
tot
I
R
V
F
V
F
Symbol
Min
Typ
Max
0.41
0.4
0.39
1
0.95
0.9
0.2
0.2
0.2
2.0
2.1
2.2
1
ns
pF
μA
V
V
Unit
Characteristics
(T
j
=25
℃
unless otherwise specified)
Figure 1. Typ. I
F
vs. V
F
for primary conduction
through the schottky barrier
Figure 2. Typ. I
F
of combination schottky
barrier and PN junction guard ring
Excel Semiconductor
www.excel-semi.com
FaxBack +86-512-67606917
Rev. 3g, 1-Sep-2009
2/3
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