NEW PRODUCT
BZX84C2V7S - BZX84C39S
DUAL 200mW SURFACE MOUNT ZENER DIODE
POWER SEMICONDUCTOR
Features
•
•
•
•
Planar Die Construction
200mW Power Dissipation
Zener Voltages from 2.7V - 39V
Ultra-Small Surface Mount Package
SOT-363
A
C
1
A
1
NC
Dim
A
B
B C
C
2
Min
0.10
1.15
2.00
0.30
1.80
0.90
0.25
0.10
Max
0.30
1.35
2.20
0.40
2.20
0.10
1.00
0.40
0.25
KXX
Mechanical Data
NC
A
2
C
D
F
H
J
M
0.65 Nominal
•
•
•
•
•
Case: SOT-363, Molded Plastic
Terminals: Solderable per MIL-STD-202,
Method 208
Polarity: See Diagram
Marking: Marking Code (See Table on Page 2)
Weight: 0.006 grams (approx.)
H
K
K
L
M
J
D
F
L
All Dimensions in mm
Maximum Ratings
@ T
A
= 25°C unless otherwise specified
Symbol
@ I
F
= 10mA
V
F
P
d
R
θJA
T
j,
T
STG
Value
0.9
200
625
-65 to +150
Unit
V
mW
K/W
°C
Characteristic
Zener Current (See Table on page 2)
Forward Voltage
Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient Air (Note 1)
Operating and Storage Temperature Range
Notes:
1. Valid provided that device terminals are kept at ambient temperature.
2. V
Z
measured @ I
ZT
using a pulse test. I
ZT
pulse width = 300ms, period = 5ms.
DS30108 Rev. 4P-1
1 of 3
BZX84C2V7S - BZX84C39S
NEW PRODUCT
Electrical Characteristics
@ T
A
= 25°C unless otherwise specified
Maximum Zener
Impedance
Z
ZT
@
I
ZT
Max (V)
2.9
3.2
3.5
3.8
4.1
4.6
5.0
5.4
6.0
6.6
7.2
7.9
8.7
9.6
10.6
11.6
12.7
14.1
15.6
17.1
19.1
21.2
23.3
25.6
28.9
32
35
38
41
100
95
95
95
95
95
78
60
40
10
8.0
7.0
7.0
10
15
20
22
25
32
40
50
50
55
80
80
80
88
95
130
Z
ZK
@ I
ZK
= 0.25mA
(W)
1900
2000
2200
2300
2400
2500
2200
2050
1800
1300
750
600
600
600
600
600
600
600
600
600
600
600
600
600
600
600
700
700
800
Maximum
Reverse Current
I
R
uA
75
50
25
15
10
5
3
2
2
1
1
0.5
0.5
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
V
R
V
1.0
1.0
1.0
1.0
1.0
1.0
1.5
2.0
3.0
4.0
5.2
6.0
6.5
7.0
7.5
8.4
9.0
10
11
12
14
15
17
18
20
22.5
25
27
29
Maximum
Zener
Current
T
A
= 25°C
(Note 1)
I
Z
(mA)
74
67
61
56
51
47
43
39
36
32
29
27
24
22
20
18
17
15
13
13
11
10
9
8
7
7
6
6
5
Temperature
Coefficient of
Zener Voltage
@ I
ZT
= 5mA
mV/K
Min
-9
-9
-8
-8
-7
-6
-5
-3
-2
-1
+2
+3
+4
+5
+5
+5
+6
+7
+8
+8
+8
+8
+8
+8
+8
+8
+8
+8
+10
Max
-4
-3
-3
-3
-3
-1
+2
+4
+6
+7
+7
+7
+7
+8
+8
+9
+9
+9
+9.5
+9.5
+10
+10
+10
+10
+10
+10
+10
+10
+12
Zener Voltage
Range (Note 2)
Type
Number
Marking
Code
Nom (V)
BZX84C2V7S
BZX84C3V0S
BZX84C3V3S
BZX84C3V6S
BZX84C3V9S
BZX84C4V3S
BZX84C4V7S
BZX84C5V1S
BZX84C5V6S
BZX84C6V2S
BZX84C6V8S
BZX84C7V5S
BZX84C8V2S
BZX84C9V1S
BZX84C10S
BZX84C11S
BZX84C12S
BZX84C13S
BZX84C15S
BZX84C16S
BZX84C18S
BZX84C20S
BZX84C22S
BZX84C24S
BZX84C27S
BZX84C30S
BZX84C33S
BZX84C36S
BZX84C39S
Notes:
KZC
KZD
KZE
KZF
KZG
KZH
KZ1
KZ2
KZ3
KZ4
KZ5
KZ6
KZ7
KZ8
KZ9
KY1
KY2
KY3
KY4
KY5
KY6
KY7
KY8
KY9
KYA
KYB
KYC
KYD
KYE
2.7
3.0
3.3
3.6
3.9
4.3
4.7
5.1
5.6
6.2
6.8
7.5
8.2
9.1
10
11
12
13
15
16
18
20
22
24
27
30
33
36
39
I
ZT
= 5.0mA
Min (V)
2.5
2.8
3.1
3.4
3.7
4.0
4.4
4.8
5.2
5.8
6.4
7.0
7.7
8.5
9.4
10.4
11.4
12.4
13.8
15.3
16.8
18.8
20.8
22.8
25.1
28
31
34
37
1. Valid provided that device terminals are kept at ambient temperature.
2. V
Z
measured @ I
ZT
using a pulse test. I
ZT
pulse width = 300µs, period = 5ms.
DS30108 Rev. 4P-1
2 of 3
BZX84C2V7S - BZX84C39S
50
T
j
= 25°C
NEW PRODUCT
C2V7
C3V9
30
C5V6
C6V8
T
j
= 25°C
C10
C12
C3V3
C4V7
40
I
Z
, ZENER CURRENT (mA)
C8V2
I
Z
, ZENER CURRENT (mA)
20
C15
30
C18
20
10
Test current I
Z
5mA
C22
C27
C33
C36 C39
10
Test Current I
Z
5.0mA
0
0
1
3
4
5
6
8
9
7
V
Z
, ZENER VOLTAGE (V)
Fig. 1. Zener Breakdown Characteristics
2
10
0
0
10
20
30
V
Z
, ZENER VOLTAGE (V)
Fig. 2. Zener Breakdown Characteristics
40
500
See Note 1
1000
T
j
= 25 °C
C
j
, JUNCTION CAPACITANCE (pF)
400
P
tot
, Power Dissipation (mW)
V
R
= 1V
V
R
= 2V
300
100
V
R
= 1V
200
V
R
= 2V
100
10
0
0
100
Ambient Temperature, °C
Fig. 3. Power Derating Curve
200
1
10
V
Z
, NOMINAL ZENER VOLTAGE (V)
100
Fig. 4. Junction Capacitance vs Nominal Zener Voltage
DS30108 Rev. 4P-1
3 of 3
BZX84C2V7S - BZX84C39S
微控制器 MCU
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