TPA65R520D,TPD65R520D
Wuxi Unigroup Microelectronics Co.,Ltd
650V Super-junction Power MOSFET
Description
650V Super-junction Power MOSFET
Super-junction power MOSFET is a revolutionary technology for high voltage power MOSFETs，designed according to the SJ
principle. The deep trench SJ MOSFET provide an extremely low switching, communication and conduction losses device with
highest robustness make especially resonant switching applications more reliable, more efficient, lighter and cooler, designed by
Wuxi Unigroup Microelectronics Company.
Features
l
Very low FOM R
DS(on)
×Q
g
l
100% avalanche tested
l
Easy to use/drive
l
RoHS compliant
TO-220F
Applications
l
Switch Mode Power Supply (SMPS)
l
Uninterruptible Power Supply (UPS)
l
Power Factor Correction (PFC)
l
Charger
TO-252
Device Marking and Package Information
Device
TPA65R520D
TPD65R520D
Package
TO-220F
TO-252
Marking
65R520D
65R520D
Key Performance Parameters
Parameter
V
DS
@ T
j,max
R
DS(on),max
Q
g,typ
I
D
I
D,pulse
E
OSS
@ 400V
Value
700
0.52
12.5
7
21
1.66
Unit
V
Ω
nC
A
A
μJ
V1.0
1
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TPA65R520D,TPD65R520D
Wuxi Unigroup Microelectronics Co.,Ltd
Absolute Maximum Ratings
T
C
= 25ºC, unless otherwise noted
Parameter
Continuous Drain Current
Pulsed Drain Current
Gate-Source Voltage
Single Pulse Avalanche Energy
Repetitive Avalanche Energy
Avalanche Current
MOSFET dv/dt Ruggedness, V
DS
= 0...480V
Power Dissipation For TO-220F
Power Dissipation For TO-252
Continuous Diode Forward Current
Diode Pulsed Current
Reverse Diode dv/dt
Operating Junction and Storage Temperature Range
(note1)
(note3)
(note2)
(note2)
T
C
= 25ºC
T
C
= 100ºC
(note1)
Symbol
I
D
I
D,pulse
V
GSS
E
AS
E
AR
I
AR
dv/dt
P
D
I
S
I
S,pulse
dv/dt
T
J
, T
stg
Values
7
4
21
±30V
45
0.28
3
50
28
62.5
7
21
5
-55~+150
Unit
A
A
V
mJ
mJ
A
V/ns
W
A
V/ns
ºC
Thermal Resistance For TO-220F
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Symbol
R
thJC
R
thJA
Value
4.5
80
Unit
ºC/W
Thermal Resistance For TO-252
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Symbol
R
thJC
R
thJA
Value
2
62
Unit
ºC/W
V1.0
2
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TPA65R520D,TPD65R520D
Wuxi Unigroup Microelectronics Co.,Ltd
Electrical Characteristics
T
J
= 25ºC, unless otherwise noted
Parameter
Static Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage Current
Gate-Source Threshold Voltage
Drain-Source On-State-Resistance
Dynamic Characteristics
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-on Delay Time
Turn-on Rise Time
Turn-off Delay Time
Turn-off Fall Time
Drain-Source Body Diode Characteristics
Body Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Peak Reverse Recovery Current
V
SD
t
rr
Q
rr
I
rrm
V
R
= 400V, I
S
=3A,
di
F
/dt = 100A/μs
T
J
= 25ºCI
SD
= 7A, V
GS
= 0V
--
--
--
--
0.9
200
1.6
3.2
1.2
--
--
--
V
ns
μC
A
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
V
DD
= 400V, I
D
= 7A,
R
G
= 25Ω
V
DD
= 520V, I
D
= 7A,
V
GS
= 10V
V
GS
= 0V,
V
DS
= 100V,
f = 1.0MHz
--
--
--
--
--
--
--
--
--
--
564
22
0.5
12.5
5
3.2
52
62
84
50
--
--
--
--
--
--
--
--
--
--
ns
nC
pF
V
(BR)DSS
I
DSS
I
GSS
V
GS(th)
R
DS(on)
V
GS
= 0V, I
D
= 250µA
V
DS
= 650V, V
GS
= 0V, T
J
= 25ºC
V
DS
= 650V, V
GS
= 0V, T
J
= 150ºC
V
GS
=
±30V
V
DS
= V
GS
, I
D
= 250µA
V
GS
= 10V, I
D
= 3A
650
--
--
--
2.5
--
--
--
--
--
--
0.44
--
1
100
±100
4.0
0.52
V
μA
nA
V
Ω
Symbol
Test Conditions
Value
Min.
Typ.
Max.
Unit
Notes
1.
2.
3.
Repetitive Rating: Pulse width limited by maximum junction temperature
I
D
= 10A, V
DD
= 50V, R
G
= 25Ω, Starting T
J
= 25°C
Identical low side and high side switch with identical R
G
V1.0
3
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TPA65R520D,TPD65R520D
Wuxi Unigroup Microelectronics Co.,Ltd
Typical Characteristics
T
J
= 25ºC, unless otherwise noted
24
20
Figure 1. Output Characteristics
20V
10V
8V
7V
6V
5V
20
Figure 2. Transfer Characteristics
V
DS
= 10V
I
D
, Drain Current (A)
I
D
, Drain Current (A)
15
16
12
8
4
0
T
J
= 25ºC
10
T
J
= 150ºC
5
0
2
4
6
8
10
12
14
16
18
20
0
0
2
4
6
8
10
V
DS
, Drain-to-Source Voltage (V)
Figure 3 . On-Resistance vs. Drain Current
1.35
10
4
10
3
V
GS
, Gate-to-Source Voltage (V)
Figure 4. Capacitance
C
iss
R
DS(on)
, On-Resistance (Ω)
1.15
Capacitance (pF)
0.95
0.75
0.55
0.35
10
2
10
1
10
0
10
-1
10
-2
C
oss
C
rss
0
5
10
15
20
25
0
100
200
300
400
500
600
700
I
D
, Drain Current (A)
Figure 5. Gate Charge
12
V
DS
, Drain-to-Source Voltage (V)
Figure 6. Body Diode Forward Voltage
10
2
V
GS
, Gate-to-Source Voltage (V)
10
8
6
4
2
0
I
S
, Source Current (A)
V
DD
= 120V
V
DD
= 520V
10
1
T
J
= 150ºC
T
J
= 25ºC
10
0
0
Q
g
, Total Gate Charge (nC)
5
10
15
10
-1
0
T
J
, Junction Temperature (ºC)
0.5
1
1.5
V1.0
4
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TPA65R520D,TPD65R520D
Wuxi Unigroup Microelectronics Co.,Ltd
Figure 7. On-Resistance vs.
Temperature
3
2.5
2
1.5
1
0.5
0
-100
1.3
Figure 8. Breakdown voltage
vs. Junction Temperature
V
BR(DSS)
, (Normalized)
I
D
= 250µA
1.2
1.1
1
0.9
0.8
-30
R
DS(on)
, (Normalized)
V
GS
= 10V
I
D
= 22.5A
-50
0
50
100
150
200
0
30
60
90
120
150
T
J
, Junction Temperature (ºC)
Figure9 . Transient Thermal Impedance For
TO-252
Z
thJC
, Thermal Impedance (ºC/W
10
0
10
2
T
J
, Junction Temperature (ºC)
Figure 10. Safe Operation Area For
TO-252
10
-1
I
D
, Drain Current(A)
10
1
10
-2
10
-3
10
-5
10
-4
10
-3
10
-2
D = 0.5
D = 0.2
D = 0.1
D = 0.05
D = 0.02
D = 0.01
Single Pulse
10
-1
10
0
10
1
10
0
10
-1
10
-2
10
0
t
p
= 1us
t
p
= 10us
t
p
= 100us
t
p
= 1ms
t
p
= 10ms
DC
10
1
10
2
10
3
T
p
, Pulse Width (s)
Figure 11. Transient Thermal Impedance
For TO-220F
10
2
V
DS
, Drain-Source Voltage(V)
Figure 12. Safe Operation Area For
TO-220F
Z
thJC
, Thermal Impedance (K/W)
10
1
I
D
, Drain Current(A)
10
0
10
1
10
-1
10
-2
10
-3
10
-7
10
-6
10
-5
10
-4
D = 0.5
D = 0.2
D = 0.1
D = 0.05
D = 0.02
D = 0.01
Single Pulse
10
-3
10
-2
10
-1
10
0
10
1
10
0
10
-1
10
-2
10
0
t
p
= 1us
t
p
= 10us
t
p
= 100us
t
p
= 1ms
t
p
= 10ms
DC
10
1
10
2
10
3
T
p
, Pulse Width (s)
V1.0
5
V
DS
, Drain-Source Voltage(V)
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