GSBCP54-55-56
NPN
Transistor
Features
■
■
■
■
For AF driver and output stages
High collector current
Low collector-emitter saturation voltage Complementary types:
GSBCP51/GSBCP52/GSBCP53
(PNP)
SOT-223
1. BASE
2. COLLECTOR
3. EMITTER
Absolute Maximum Ratings
(T
A
=25°C unless otherwise noted）
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Thermal Resistance Junction to Ambient
Storage Temperature Range
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
R
θJA
T
STG
Rating
GSBCP54
GSBCP55
GSBCP56
Unit
V
V
V
A
W
℃/W
℃
45
45
60
60
5
1
1.5
83.3
-65 to +150
100
80
Electrical Characteristics
(T
A
=25°C unless otherwise noted）
Parameter
Collector-Base
Breakdown Voltage
GSBCP54
GSBCP55
GSBCP56
Symbol
Test Conditions
Min
45
V
(BR)CBO
I
C
=0.1mA,I
E
=0
60
100
45
V
(BR)CEO
I
C
= 10mA,I
B
=0
60
80
V
(BR)EBO
I
CBO
h
FE(1)
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Voltage
Transition Frequency
h
FE(2)
h
FE(3)
V
CE(sat)
V
BE
f
T
I
E
=10μA,I
C
=0
V
CB
=30 V, I
E
=0
V
CE
=2V, I
C
=5mA
V
CE
=2V, I
C
=150mA
V
CE
=2V, I
C
=500mA
I
C
=500mA,I
B
=50mA
V
CE
=2V, I
C
=500mA
V
CE
=10V,I
C
=50
mA,f=100MHz
5
-
25
63
25
-
-
100
-
100
-
250
-
0.5
1
-
V
nA
-
-
-
V
V
MHz
-
V
-
V
Max
Unit
Collector-Emitter
Breakdown Voltage
GSBCP54
GSBCP55
GSBCP56
Base-Emitter Breakdown Voltage
Collector Cut-Off Current
Classification of hFE(2)
Rank
Range
GSBCP54-10, GSBCP55-10, GSBCP56-10
63-160
GSBCP54-16, GSBCP55-16, GSBCP56-16
100-250
1/4
GSBCP54-55-56
NPN
Transistor
Typical Electrical Characteristic Curves
Package Outline Dimensions
SOT-223
Symbol
A
A1
A2
b
b1
c
D
E
E1
e
L
θ
Dimensions In Millimeters
Min.
Max.
——
1.800
0.020
0.100
1.500
1.700
0.660
0.840
2.900
3.100
0.230
0.350
6.300
6.700
6.700
7.300
3.300
3.700
2.300(BSC)
0.750
——
0°
10°
Dimensions In Inches
Min.
Max.
——
0.071
0.001
0.004
0.059
0.067
0.026
0.033
0.114
0.122
0.009
0.014
0.248
0.264
0.264
0.287
0.130
0.146
0.091(BSC)
0.030
——
0°
10°
3/4
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