BC807-16W SERIES
PNP GENERAL PURPOSE TRANSISTORS
VOLTAGE
FEATURES
• General purpose amplifier applications
• PNP epitaxial silicon, planar design
• Collector current I
C
= 500mA
• In compliance with EU RoHS 2002/95/EC directives
0.087(2.20)
0.070(1.80)
0.004(0.10)MIN.
0.044(1.10)
0.035(0.90)
0.087(2.20)
0.078(2.00)
45 Volts
POWER
300 mWatts
MECHANICAL DATA
• Case: SOT-323, Plastic
• Terminals: Solderable per MIL-STD-750, Method 2026
• Apporx. Weight: 0.0001 ounce, 0.005 gram
• Device Marking : BC807-16W : 7S
BC807-25W : 7V
BC807-40W : 7W
0.054(1.35)
0.045(1.15)
0.056(1.40)
0.047(1.20)
0.006(0.15)
0.002(0.05)
0.004(0.10)MAX.
0.016(0.40)
0.008(0.20)
MECHANICAL DATA
PARAMETER
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current - Continuous
Total Power Dissipation (Note 1)
Junction and Storage Temperature Range
SYMBOL
V
CEO
V
CBO
V
EBO
I
C
P
TOT
T
J
, T
STG
Value
-45
-50
-5.0
-500
300
-55 to 150
UNIT
V
V
V
mA
mW
o
C
THERMAL CHARACTERISTICS
PARAMETER
Thermal Resistance Junction to Ambient (Note 1)
SYMBOL
R
θJA
Value
420
UNIT
o
C/W
Note 1 : Transistor mounted on FR-5 board minimum pad mounting conditions.
March 22,2011-REV.04
PAGE . 1
BC807-16W SERIES
ELECTRICAL CHARACTERISTICS(T
J
=25
o
C,unless otherwise notes)
PARAMETER
Collector-Emitter Breakdown Voltage (I
C
=-10mA, I
B
=0)
Collector-Base Breakdown Voltage (V
EB
=0V, I
C
=-10μA)
Emitter-Base Breakdown Voltage (I
E
=-1μA,Ic=0)
Emitter-Base Cutoff Current (V
EB
=-5V)
Collector-Base Cutoff Current (V
CB
=-20V,I
E
=0)
T
J
=25
O
C
T
J
=150
O
C
DC Current Gain
(Ic=-100mA,V
CE
=-1V)
BC807-16W
BC807-25W
BC807-40W
SYMBOL
V
(BR)
CEO
V
(BR)
CBO
V
(BR)
EBO
I
EBO
MIN.
-45
-50
-5.0
-
-
-
TYP.
-
-
-
-
MAX.
-
-
-
-100
-100
-
-5.0
UNIT
V
V
V
nA
nA
μA
I
CBO
h
FE
100
160
250
40
-
-
-
-
-
-
7.0
-
250
400
600
-
-0.7
-1.2
-
-
-
(Ic=-500mA,V
CE
=-1V)
Collector-Emitter Saturation Voltage (Ic=-500mA ,I
B
=-50mA)
Base-Emitte Voltage (Ic=-500mA,V
CE
=-1.0V)
Collector-Base Capacitance (V
CB
=-10V,I
E
=0,f=1MHz)
Current Gain-Bandwidth Product (Ic=-10mA,V
CE
=-5V,f=100MHz)
V
CE(SAT)
V
BE(ON)
C
CBO
f
T
-
-
-
100
V
V
pF
MHz
March 22,2011-REV.04
PAGE . 2
BC807-16W SERIES
-10
I
C
/I
B
= 10
T
J
= 150°C
-1
I
C
/I
B
= 10
T
J
= 25°C
-1
V
CE(SAT)
(V)
V
BE(SAT)
(V)
T
J
= 25°C
-0.1
T
J
= 150°C
-0.1
-0.1
-1
-10
-100
-1000
-0.01
-0.1
-1
-10
-100
-1000
I
C
, Collector Current (mA)
I
C
, Collector Current (mA)
Fig.1 Base-Emitter Saturation Voltage
600
V
CE
= -1V
Fig.2 Collector-Emitter Saturation Voltage
600
T
J
= 75°C
T
J
= 150°C
V
CE
= -1V
400
T
J
= 75°C
T
J
= 150°C
400
H
FE
200
T
J
= 25°C
0
-0.1
-1
-10
-100
-1000
H
FE
200
T
J
= 25°C
0
-0.1
-1
-10
-100
-1000
I
C
, Collector Current (mA)
I
C
, Collector Current (mA)
Fig.3 BC807-16W: Typical DC Current Gain
800
T
J
= 150°C
600
V
CE
= -1V
Fig.4 BC807-25W: Typical DC Current Gain
100
C
EB
f =1MHz
T
J
=25°C
C
CB,
C
CB
(pF)
H
FE
400
T
J
= 75°C
10
C
CB
200
T
J
= 25°C
0
-0.1
-1
-10
-100
-1000
1
-0.1
-1
-10
-100
I
C
, Collector Current (mA)
V
CB
, V
EB
(V)
Fig.5 BC807-40W: DC Current Gain
Fig.6 Typical Capacitance
March 22,2011-REV.04
PAGE . 3
BC807-16W SERIES
MOUNTING PAD LAYOUT
ORDER INFORMATION
• Packing information
T/R - 12K per 13" plastic Reel
T/R - 3K per 7” plastic Reel
LEGAL STATEMENT
Copyright PanJit International, Inc 2011
The information presented in this document is believed to be accurate and reliable. The specifications and information herein
are subject to change without notice. Pan Jit makes no warranty, representation or guarantee regarding the suitability of its
products for any particular purpose. Pan Jit products are not authorized for use in life support devices or systems. Pan Jit
does not convey any license under its patent rights or rights of others.
March 22,2011-REV.04
PAGE .
4
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