WNMD2167
WNMD2167
Dual N-Channel, 20V, 6.3A, Power MOSFET
V
DS
(V)
Typical Rds(on) (Ω)
0.016@ V
GS
=4.5V
0.0175@ V
GS
=3.8V
20
0.018@ V
GS
=3.1V
0.020@ V
GS
=2.5V
Http//:www.willsemi.com
SOT-23-6L
Descriptions
The WNMD2167 is N-Channel enhancement MOS
Field
Effect
Transistor.
Uses
advanced
trench
(ON)
G1
6
D1/D2
5
G2
4
technology and design to provide excellent R
DS
with low gate charge. This device is suitable for use in
DC-DC conversion, power switch and charging circuit.
Standard Product WNMD2167 is Pb-free.
1
S1
2
D1/D2
3
S2
Features
Trench Technology
Supper high density cell design
Excellent ON resistance for higher DC current
Extremely Low Threshold Voltage
Small package SOT-23-6L
Pin configuration (Top view)
6
5
4
2167
YYWW
1
2
3
2167 =
YY
WW
=
=
Device Code
Year
Week
Applications
Driver for Relay, Solenoid, Motor, LED etc.
DC-DC converter circuit
Power Switch
Load Switch
Charging
Device
WNMD2167-6/TR
Marking
Order information
Package
SOT-23-6L
Shipping
3000/Reel&Tape
Will Semiconductor Ltd.
1
2017/5/26- Rev.1.3
WNMD2167
Absolute Maximum ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
a d
Maximum Power Dissipation
a d
Continuous Drain Current
b
Maximum Power Dissipation
Pulsed Drain Current
c
Operating Junction Temperature
Lead Temperature
Storage Temperature Range
b
Symbol
V
DS
V
GS
T
A
=25°
C
T
A
=70°
C
T
A
=25°
C
T
A
=70°
C
T
A
=25°
C
T
A
=70°
C
T
A
=25°
C
T
A
=70°
C
I
D
P
D
I
D
P
D
I
DM
T
J
T
L
T
stg
10 S
Steady State
20
±
10
Unit
V
6.3
5.0
1.1
0.7
5.8
4.6
0.9
0.6
30
-55 to 150
260
-55 to 150
5.7
4.6
0.9
0.6
5.2
4.1
0.7
0.5
A
W
A
W
A
°
C
°
C
°
C
Thermal resistance ratings
Single Operation
Parameter
Junction-to-Ambient Thermal Resistance
Junction-to-Ambient Thermal Resistance
Junction-to-Case Thermal Resistance
a
Symbol
t ≤ 10 s
Steady State
b
Typical
76
115
92
135
63
Maximum
94
145
115
175
78
Unit
R
θJA
R
θJA
R
θJC
t ≤ 10 s
Steady State
Steady State
t ≤ 10 s
Steady State
t ≤ 10 s
Steady State
Steady State
°
C/W
Dual Operation
Junction-to-Ambient Thermal Resistance
Junction-to-Ambient Thermal Resistance
Junction-to-Case Thermal Resistance
a
R
θJA
R
θJA
R
θJC
79
118
96
138
66
97
148
118
180
81
b
°
C/W
a
b
c
d
Surface mounted on FR-4 Board using 1 square inch pad size, 1oz copper
Surface mounted on FR-4 board using minimum pad size, 1oz copper
Pulse width<380µs, Duty Cycle<2%
Maximum junction temperature T
J
=150°
C.
Will Semiconductor Ltd.
2
2017/5/26- Rev.1.3
WNMD2167
Electronics Characteristics
(Ta=25
o
C, unless otherwise noted)
Parameter
OFF CHARACTERISTICS
Drain-to-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-to-source Leakage Current
ON CHARACTERISTICS
Gate Threshold Voltage
V
GS(TH)
V
GS
= V
DS
, I
D
= 250uA
V
GS
= 4.5V, I
D
= 6.3A
Drain-to-source On-resistance
b, c
Symbol
Test Conditions
Min
Typ
Max
Unit
BV
DSS
I
DSS
I
GSS
V
GS
= 0 V, I
D
= 250uA
V
DS
=16 V, V
GS
= 0V
V
DS
= 0 V, V
GS
= ±
10V
20
1
±
1
V
uA
uA
0.5
12
13
14
15
0.7
16
17.5
18
20
16
1.0
21
22
23
26
V
R
DS(on)
V
GS
= 3.8V, I
D
= 6.0A
V
GS
= 3.1V, I
D
= 6.0A
V
GS
= 2.5V, I
D
= 5.5A
mΩ
Forward Transconductance
g
FS
V
DS
= 5.0 V, I
D
= 6.3A
S
CHARGES, CAPACITANCES AND GATE RESISTANCE
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Threshold Gate Charge
Gate-to-Source Charge
Gate-to-Drain Charge
SWITCHING CHARACTERISTICS
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
BODY DIODE CHARACTERISTICS
Forward Voltage
V
SD
V
GS
= 0 V, I
S
= 1.0A
0.65
1.5
V
td(ON)
tr
td(OFF)
tf
V
GS
= 4.5 V, V
DD
= 10 V,
R
L
= 2Ω, R
G
=6 Ω
22
18
62
28
ns
C
ISS
C
OSS
C
RSS
Q
G(TOT)
Q
G(TH)
Q
GS
Q
GD
V
GS
= 4.5 V, V
DD
= 10 V,
I
D
=6.3 A
850
V
GS
= 0 V, f = 1MHz,
V
DS
= 10 V
127
115
10.9
0.62
1.92
2.0
nC
pF
Will Semiconductor Ltd.
3
2017/5/26- Rev.1.3
WNMD2167
Typical Characteristics
(Ta=25
o
C, unless otherwise noted)
20
V
GS
=1.5V
V
GS
=1.8V
15
V
GS
=2.5V
V
GS
=3.5V
V
GS
=4.5V
10
15
V
DS
=5V
T=-50C
T=-25C
T=125C
I
DS
- Drain to Source Current (A)
I
DS
-Drain to Source Current(A)
10
5
5
0
0.0
0.4
0.8
1.2
1.6
2.0
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
V
DS
-Drain to Source Voltage(V)
V
GS
-Gate to Source Voltage
Output characteristics
30
Transfer characteristics
100
I
D
=6.3A
R
DS(ON)
-On Resistance(m
)
25
V
GS
=2.5V
20
R
DS(on)
-On Resistance(m)
10
80
60
V
GS
=3.8V
40
15
V
GS
=4.5V
20
10
2
4
6
8
0
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
I
DS
-Drain to Source Current(A)
V
GS
-Gate to Source Voltage(V)
On-Resistance vs. Drain current
1.6
1.4
V
GS
=4.5V
I
D
=6.3A
On-Resistance vs. Gate-to-Source voltage
1.4
Normalized Gate Threshold Voltage
I
D
=250uA
1.2
Normalized On-Resistance
1.2
1.0
0.8
0.6
-50
-25
0
25
50
75
100
125
150
1.0
0.8
0.6
0.4
-50
-25
0
25
50
75
100
125
150
Temperature (
o
C)
Temperature (
o
C)
On-Resistance vs. Junction temperature
Threshold voltage vs. Temperature
Will Semiconductor Ltd.
4
2017/5/26- Rev.1.3
WNMD2167
1800
1600
1400
CISS
COSS
CRSS
20
T=25C
T=150C
15
1200
1000
800
600
400
200
0
0
2
4
6
8
10
I
SD
-Source to Drain Current (A)
C-Capacitance(pF)
10
5
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V
DS
- Drain to Source Voltage(V)
V
SD
- Source to Drain Voltage (V)
Capacitance
50
45
40
35
T
J(Max)
=150°
C
T
A
=25°
C
10
100
Body diode forward voltage
Limit by Rdson
I
D
- Drain Current (A)
Power (W)
30
25
20
15
10
5
0
1E-4
1E-3
0.01
0.1
1
10
100
1000
100us
1
10S
0.1
DC
Bvdss Limit
1ms
10ms
100ms
1S
T
A
=25C
Single Pulse
0.01
0.1
Pulse width (S)
1
10
V
DS
- Drain Source Voltage (V)
100
* V
GS
> minimum V
GS
at which RDS(on) is specified
Single pulse power
4.5
4.0
3.5
V
GS
=4.5V
I
D
=6.3A
Safe operating power
V
GS
- Gate Voltage (V)
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0
2
4
6
Qg (nC)
8
10
12
Gate Charge Characteristics
Will Semiconductor Ltd.
5
2017/5/26- Rev.1.3
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