WCM2068
WCM2068
N- and P-Channel Complementary, 20V,MOSFET
Http://www. sh- willsemi.com
V
DS
(V)
N-Channel
20
P-Channel
-20
Typical R
DS(on)
(Ω)
0.033@ V
GS
=4.5V
0.037@ V
GS
=3.3V
0.041@ V
GS
=2.5V
0.085@V
GS
=- 4.5V
0.097@V
GS
= -3.3V
0.110@V
GS
= -2.5V
SOT-23-6L
Descriptions
The
WCM2068
is the N-Channel
and
P-Channel enhancement MOS Field Effect
Transistor as a single package for DC-DC converter
or level shift applications, uses advanced trench
technology and design to provide excellent R
DS(ON)
with low gate charge. Standard Product WCM2068
is Pb-free and
Halogen-free
.
Pin configuration (Top View)
Features
Trench Technology
Supper high density cell design
Excellent ON resistance
Extremely Low Threshold Voltage
Small package SOT-23-6L
2068 = Device Code
MA = Special Code
YW= Date Code
Marking
Order Information
Applications
Driver: Relays, Solenoids, Lamps, Hammers
Power supply converters circuit
Load/Power Switching for portable device
Device
WCM2068-6/TR
Package
SOT-23-6L
Shipping
3000/Tape&Reel
Will Semiconductor Ltd.
1
Oct, 2014 - Rev.1.0
WCM2068
Absolute Maximum Ratings (T
A
=25
o
C unless otherwise noted)
Symbol
V
DSS
V
GSS
I
D
I
DM
P
D
T
J
T
stg
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current
Pulsed Drain Current
c
Power Dissipation
ad
ad
N-Channel
20
±8
T
A
=25
o
C
T
A
=70 C
T
A
=25
o
C
T
A
=70
o
C
o
P-Channel
-20
±8
-2.8
-2.2
-10
Unit
V
V
A
A
W
°C
°C
4.4
3.5
16
0.72
0.46
-55~150
-55~150
Operation junction temperature
Storage temperature range
Thermal Resistance Ratings (T
A
=25
o
C unless otherwise noted)
Parameter
Junction-to-Ambient Thermal Resistance
a
Junction-to-Ambient Thermal Resistance
b
Junction-to-Case Thermal Resistance
a
b
c
d
t ≤ 10 s
Steady State
t ≤ 10 s
Steady State
Steady State
Symbol
R
θJA
R
θJA
R
θJC
Typical
74
115
90
138
63
Maximum
92
143
112
172
78
°C/W
Unit
Surface mounted on FR4 Board using 1 square inch pad size, 1oz copper
Surface mounted on FR4 board using minimum pad size, 1oz copper
Pulse width<380μs, Duty Cycle<2%
Maximum junction temperature T
J
=150°C.
Will Semiconductor Ltd.
2
Oct, 2014 - Rev.1.0
WCM2068
Electronics Characteristics (T
A
=25
o
C unless otherwise noted)
Symbol
Parameter
Drain-Source Breakdown
Voltage
Zero Gate Voltage Drain Current
Gate –Source leakage current
Test Condition
V
GS
=0V, I
D
=250uA
V
GS
=0V, I
D
=-250uA
V
DS
=16V, V
GS
=0V
V
DS
=-16V, V
GS
=0V
V
DS
=0V, V
GS
=±8V
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
0.65
-0.70
33
85
37
100
41
110
345
531
55
61
48
54
5.25
5.8
0.65
0.72
1.2
1.1
1.05
1.0
18.6
21.6
8.2
8.6
55
58
7.6
8.4
ns
nC
pF
Min
20
-20
1
-1
±1
±1
1.0
-1.0
46
116
55
125
69
131
mΩ
Typ.
Max
Unit
Off Characteristics
V(
BR
)
DSS
I
DSS
I
GSS
V
uA
uA
ON Characteristics
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
, I
D
=250uA
V
DS
= V
GS
, I
D
=-250uA
V
GS
=4.5V, I
D
=3.4A
V
GS
=-4.5V, I
D
=-2.8A
R
DS(on)
Drain-Source On-Resistance
V
GS
=3.3V, I
D
=3.0A
V
GS
=-3.3V, I
D
=-2.0A
V
GS
=2.5V, I
D
=3.0A
V
GS
=-2.5V, I
D
=-2.0A
Dynamic Characteristics
Ciss
Coss
Crss
Q
G(TOT)
Q
G(TH)
Q
GS
Q
GD
td(on)
tr
td(off)
tf
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Threshold gate charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Nmos
：
V
DS
=10V,V
GS
=0V,
F=1MHz
Pmos
：
V
DS
=-10V,V
GS
=0V,
f=1MH
Z
V
Nmos
：
V
DD
=10V, V
GS
=4.5V,
I
D
=3.4A
Pmos
：
V
DD
=-10V,V
GS
=-4.5V
I
D
=-2.8A
Nmos
：
V
DD
=10V,V
GS
=4.5V,
I
D
=1.0A, R
G
=6Ω
Pmos
：
V
DD
=-10V, I
D
=-1.2A,
V
GS
=-4.5V, R
G
=6Ω
Will Semiconductor Ltd.
3
Oct, 2014 - Rev.1.0
WCM2068
BODY DIODE CHARACTERISTICS
Forward Voltage
V
SD
V
GS
= 0 V, I
S
= 1.0A
V
GS
= 0 V, I
S
=-1.0A
N-Ch
P-Ch
0.7
-0.8
1.5
-1.5
V
Will Semiconductor Ltd.
4
Oct, 2014 - Rev.1.0
WCM2068
Typical Characteristics
20
V
GS
=3.5V
I
DS
-Drain to Source Current (A)
16
V
GS
=4.5V
12
V
GS
=3.0V
V
GS
=2.5V
I
DS
-Drain to Source Current(A)
8
4
0
0.0
0.5
1.0
V
DS
-Drain to Source Voltage(V)
Output Characteristics
0.30
0.25
V
GS
=1.8V
V
GS
=4.5V
R
DS(on)
- On-Resistance(Ω)
0.20
0.15
0.10
0.05
0.00
R
DS(on)
- On-Resistance(Ω)
0
2
4
6
8
10
I
DS
-Drain-to-Source Current(A)
On-Resistance vs. Drain Current
1.6
I
D
=3.4A
Normalized Gate Threshold Voltage
V
GS
=4.5V
Normalized On-Resistance
1.4
1.2
1.0
0.8
-50
0
50
Temperature(°C)
100
150
On-Resistance vs. Junction Temperature
Will Semiconductor Ltd.
)
N-Channel T
A
=25°C,unless otherwise noted)
10
T=-50°C
T=25°C
T=125°C
8
6
V
DS
= 5V
V
GS
=1.8V
4
2
1.5
2.0
0
0.0
0.5
1.0
1.5
2.0
V
GS
-Gate to Source Voltage(V)
Transfer Characteristics
0.20
I
D
=3.4A
0.15
V
GS
=2.5V
0.10
0.05
12
14
16
18
20
0.00
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
V
GS
-Gate to Source Voltage(V)
On-Resistance vs. Gate-to-Source Voltage
1.4
I
D
=250uA
1.2
1.0
0.8
0.6
0.4
-50
0
50
Temperature (°C)
100
150
Threshold Voltage vs. Temperature
5
Oct, 2014 - Rev.1.0
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