WPT2N41
WPT2N41
Single, PNP, -30V, -3A, Power Transistor
Http://www.sh-willsemi.com
Descriptions
The WPT2N41 is PNP bipolar power transistor with
very low saturation voltage. This device is suitable for
use in charging circuit and power management.
Standard Product WPT2N41 is Pb-free.
Features
Pin configuration (Top view)
Ultra low collector-to-emitter saturation voltage
High DC current gain >100
3A continue collector current
Small package PDFN3x2-8L
2N41
YY
WW
= Device Code
=Year
=Week
Marking
Applications
Order information
Power Management
Charging
Other power management in portable equipments
Device
WPT2N41-8/TR
Package
PDFN3*2-8L
Shipping
3000/Reel&Tape
Will Semiconductor Ltd.
1
Aug, 2017 - Rev.1.1
WPT2N41
Absolute Maximum ratings
Parameter
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Continues collector current
a
Continues collector current
b
Pulse collector current
Power dissipation
a
Power dissipation
b
Junction Temperature
Lead Temperature
Storage Temperature Range
Symbol
V
CEO
V
CBO
V
EBO
I
C
I
C
M
P
D
T
J
T
L
Tstg
Value
-32
-45
-6
-3
-2
-6
3
1.7
150
260
-55〜155
Unit
V
V
V
A
A
A
W
W
°
C
°
C
°
C
Thermal resistance ratings
THERMAL RESISTANCE RATINGS
Parameter
Junction-to-Ambient Thermal Resistance
a
Junction-to-Ambient Thermal Resistance
b
Junction-to-Case Thermal Resistance
d
a
b
c
d
t ≤ 10 s
Steady State
t ≤ 10 s
Steady State
Steady State
Symbol
R
θJA
R
θJA
R
θJC
Typical
42
90
70
120
15
Unit
°C/W
Surface mounted on FR4 Board using 1 square inch pad size, 1oz copper
Surface mounted on FR4 board using minimum pad size, 1oz copper
Pulse width=300us,Duty Cycle<2%
Surface mounted on FR4 Board using 1 square inch pad size, 2oz copper
Electronics Characteristics
(Ta=25
o
C, unless otherwise noted)
Parameter
Collector-emitter breakdown voltage
Collector-base breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
c
Base-emitter saturation voltage
c
DC current gain
c
Symbol
BV
CEO
BV
CBO
BV
EBO
I
CBO
I
EBO
Vce(sat)
Vbe(sat)
HFE
Test Conditions
lc=-10mA, l
B
=0mA
lc=-100uA, l
E
=0mA
I
E
=-100uA, lc=0mA
V
CB
=-40V
V
EB
=-5V
I
C
=-2A, lB=-200mA
I
C
=-2A, lB=-200mA
l
C
=-1A , V
CE
=-2V
Min.
-32
-45
-6
Typ.
Max.
Unit
V
V
V
-100
-100
-0.2
-1.0
-0.5
-1.5
320
nA
nA
mV
V
100
200
Will Semiconductor Ltd.
2
Aug, 2017 - Rev.1.1
WPT2N41
Package outline dimensions
Recommend land pattern(Unit:mm)
0.35
0.65
0.55
1.20
Will Semiconductor Ltd.
2.30
1.65
Notes: This recommended land pattern
is for reference purposes only. Please
consult your manufacturing group to
ensure your PCB design guidelines are
met.
0.65
0.55
0.35
4
Aug, 2017 - Rev.1.1
stm32/stm8
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