WS4665
WS4665
6A, 14mΩ Load Switch with Quick Output
Discharge and Adjustable Rise Time
DESCRIPTION
The WS4665 is a single channel load switch that
provides configurable rise time to minimize inrush
current. The device contains an N-channel MOSFET
that can operate over an input voltage range of 0.8V to
5.5V and can support a maximum continuous current
of 6A. The switch is controlled by an on/off input (ON),
which is capable of interfacing directly with low-voltage
control signals. In the WS4665, a 230
Ω
on-chip load
resistor is added for quick output discharge when
switch is turned off.
The WS4665 is available in a small, space-saving
2.00mm x 2.00mm 8-pin DFN package. Standard
Products are Pb-free and halogen-free.
Pin configuration (Top view)
http//:www.sh-willsemi.com
FEATURES
Integrated Single Channel Load Switch
Input Voltage Range: 0.8V to 5.5V
Ultra-Low On Resistance
（R
ON
）
- R
ON =
14mΩ at VIN = 5V (VBIAS = 5V)
6-A Maximum Continuous Switch Current
Low Control Input Threshold Enables Use of 1.2-V,
1.8-V, 2.5-V and 3.3-V Logic
Configurable Rise Time
Quick Output Discharge (QOD)
DFN8 2x2 8L Package
ESD Performance Tested per JESD 22
- 2000V HBM and 1000V CDM
Device
WS4665D-8/TR
DFN2x2-8L
4665 = Device code
DA
Y
W
= Package code
= Year code
= Week code
Marking
Order information
Package
DFN2x2-8L
Shipping
3000/Reel&Tape
APPLICATIONS
Ultrabook
TM
Notebooks/Netbooks
Tablet PC
Consumer Electronics
Set-top Boxes/Residential Gateways
Telecom Systems
1
May, 2019 - Rev. 1.2
Will Semiconductor Ltd.
WS4665
TYPICAL APPLICATION
PIN DESCRIPTION
PIN No.
1
2
3
4
5
6
7
8
PIN NAME
VIN
VIN
ON
VBIAS
GND
CT
VOUT
VOUT
I/O
I
I
I
I
-
O
O
O
DESCRIPTION
Switch input. Input bypass capacitor recommended for minimizing V
IN
dip.
Switch input. Input bypass capacitor recommended for minimizing V
IN
dip.
Active high switch control input. Do not leave floating.
Bias voltage. Power supply to the device. Recommended voltage range
for this pin is 2.5V to 5.5V.
Device ground.
Switch slew rate control. Can be left floating.
Switch output.
Switch output.
BLOCK DIAGRAM
Will Semiconductor Ltd.
2
May, 2019 - Rev. 1.2
WS4665
ABSOLUTE MAXIMUM RATINGS
Symbol
V
IN
V
OUT
V
BIAS
V
ON
I
MAX
I
PLS
T
A
T
J
T
STG
T
LEAD
ESD
Parameter
Input voltage range
Output voltage range
Bias voltage range
Input voltage range
Maximum continuous switch current
Maximum pulsed switch current, pulse < 300uS, 2% duty cycle
Operating free-air temperature range
(Note1)
Maximum junction temperature
Storage temperature range
Maximum lead temperature (10-s soldering time)
Electrostatic discharge
protection
Human-Body Model (HBM)
Charged-Device Model (CDM)
Value
-0.3 to 6
-0.3 to 6
-0.3 to 6
-0.3 to 6
6
8
-40 to 85
150
-60 to 150
300
2000
1000
Unit
V
V
V
V
A
A
°C
°C
°C
°C
V
These are stress ratings only. Stresses exceeding the range specified under “Absolute Maximum Ratings”
may cause substantial damage to the device. Functional operation of this device at other conditions beyond
those listed in the specification is not implied and prolonged exposure to extreme conditions may affect device
reliability.
Note 1:
In applications where high power dissipation and/or poor package thermal resistance is present, the
maximum ambient temperature may have to be de-rated. Maximum ambient temperature
（
T
A(max)
）
is
dependent on the maximum operating junction temperature [TJ(max)], the maximum power dissipation of the
device in the application [PD(max)], and the junction-to-ambient thermal resistance of the part/package in the
application(
q
JA
), as given by the following equation:
T
A
(max)
½
T
J
(max)
(q
JA
P
D
(max))
THERMAL INFORMATION
Thermal Metric
WS4665
DFN2*2-8L(FC)
62
Units
°C/W
q
JA
Junction-to-ambient thermal resistance
RECOMMENDED OPERATING CONDITIONS
Symbol
VIN
VBIAS
VON
VOUT
VIH
VIL
CIN
Parameter
Input voltage range
Bias voltage range
ON voltage range
Output voltage range
High-level input voltage, ON
Low-level input voltage, ON
Input capacitor
VBIAS=2.5V to 5.5V
VBIAS=2.5V to 5.5V
1.2
0
1
MIN
0.8
2.5
0
MAX
VBIAS
5.5
5.5
VIN
5.5
0.4
UNIT
V
V
V
V
V
V
μF
Will Semiconductor Ltd.
3
May, 2019 - Rev. 1.2
WS4665
ELECTRICAL CHARACTERISTICS
Unless otherwise noted, the specification in the following table applies over the operating ambient
temperature -40°C ≤ T
A
≤ 85°C and V
BIAS
=5.0V. Typical values are for T
A
=25°C.
Parameter
Power Supplies and Currents
I
IN(VBIAS-ON)
V
BIAS
quiescent current
I
IN(VBIAS-OFF)
V
BIAS
shutdown current
Test Conditions
I
OUT
= 0mA, V
IN
= V
ON
= 5.0V
V
ON
= GND, V
OUT
= 0V
VIN = 5.0V
T
A
Min
Typ
Max
Unit
Full
Full
66
75
0.01
μA
μA
0.002
Full
0.001
0
0
Full
0.7
0.5
0.4
0.3
0.01
μA
μA
I
IN(VIN-OFF)
V
IN
off-state supply current
I
ON
ON pin input leakage current
Resistance Characteristics
V
ON
= GND,
V
OUT
= 0V
V
ON
= 5.5V
VIN = 3.3V
VIN = 1.8V
VIN = 0.8V
V
IN
= 5.0V
V
IN
= 3.3V
V
IN
= 1.8V
V
IN
= 1.5V
V
IN
= 1.2V
V
IN
= 0.8V
R
PD
Output pull-down resistance
V
IN
= 5.0V, V
ON
= 0V,
I
OUT
= 15mA
25°C
Full
25°C
Full
25°C
Full
25°C
Full
25°C
Full
25°C
Full
Full
14.2
22
14.2
21.5
14.2
21.5
14.2
21
14.2
21
14.2
21
230
250
mΩ
mΩ
mΩ
mΩ
mΩ
mΩ
Ω
R
ON
ON-state resistance
I
OUT
= -200mA,
V
BIAS
= 5.0V
Will Semiconductor Ltd.
4
May, 2019 - Rev. 1.2
WS4665
ELECTRICAL CHARACTERISTICS (Continuous)
Unless otherwise noted, the specification in the following table applies over the operating ambient
temperature -40°C ≤ T
A
≤ 85°C and V
BIAS
=2.5V. Typical values are for T
A
=25°C.
Parameter
Power Supplies and Currents
I
IN(VBIAS-ON)
V
BIAS
quiescent current
I
IN(VBIAS-OFF)
V
BIAS
shutdown current
VIN = 2.5V
I
IN(VIN-OFF)
V
IN
off-state supply current
I
ON
ON pin input leakage current
Resistance Characteristics
V
IN
= 2.5V
V
IN
= 1.8V
R
ON
ON-state resistance
I
OUT
= -200mA,
V
BIAS
= 2.5V
V
IN
= 1.5V
V
IN
= 1.2V
V
IN
= 0.8V
R
PD
Output pull-down resistance
V
IN
= 2.5V, V
ON
= 0V,
I
OUT
= 1mA
25°C
Full
25°C
Full
25°C
Full
25°C
Full
25°C
Full
Full
255
15.5
21.3
270
15.6
21.4
15.6
21.5
15.7
21.7
16
22
mΩ
mΩ
mΩ
mΩ
mΩ
Ω
V
ON
= GND,
V
OUT
= 0V
V
ON
= 5.5V
VIN = 1.8V
VIN = 1.2V
VIN = 0.8V
Full
Full
V
ON
= GND, V
OUT
= 0V
I
OUT
= 0mA, V
IN
= V
ON
= 2.5V
Full
Full
0.001
0.001
0
0
35
45
0.01
0.5
0.47
0.41
0.4
0.01
μA
μA
μA
μA
Test Conditions
T
A
Min
Typ
Max
Unit
SWITCHING CHARACTERISTICS MEASUREMENT INFORMATION
TEST CIRCUIT
Will Semiconductor Ltd.
5
May, 2019 - Rev. 1.2
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