ESD56101DXX
ESD56101DXX
http//:www.sh-willsemi.com
1-Line, Uni-directional, Transient Voltage Suppressor
Descriptions
The ESD56101DXX is a transient voltage suppressor
designed to protect power interfaces. It is suitable to replace
multiple discrete components in portable electronics.
The ESD56101DXX is specifically designed to protect power
lines.
The ESD56101DXX is available in DFN1610-2L package.
Standard products are Pb-free and Halogen-free.
Pin1
Pin2
DFN1610-2L (Bottom View)
Features
Reverse stand-off voltage: 5V ~ 15V
Surge protection according to IEC61000-4-5
see
Table 4
ESD protection according to IEC61000-4-2
±30kV (contact and air discharge)
Low clamping voltage
Solid-state silicon technology
Pin1
Circuit diagram
x*
Pin2
Applications
Power supply protection
Power management
X = Device code (B C F G)
* = Month code
Marking (Top View)
Order information
Table 1.
Device
Package
Shipping
Marking
B*
C*
F*
G*
ESD56101D05-2/TR DFN1610-2L 10000/Tape&Reel
ESD56101D10-2/TR DFN1610-2L 10000/Tape&Reel
ESD56101D12-2/TR DFN1610-2L 10000/Tape&Reel
ESD56101D15-2/TR DFN1610-2L 10000/Tape&Reel
Will Semiconductor Ltd.
1
Revision 1.5, 2018/08/08
ESD56101DXX
Absolute maximum ratings
Table 2.
Parameter
Peak pulse power (tp = 8/20μs)
ESD according to IEC61000-4-2 air discharge
ESD according to IEC61000-4-2 contact discharge
Junction temperature
Operating temperature
Lead temperature
Storage temperature
Symbol
P
pk
V
ESD
T
J
T
OP
T
L
T
STG
Rating
1250
±30
±30
125
-40~85
260
-55~150
Unit
W
kV
o
o
o
o
C
C
C
C
Electrical characteristics
(T
A
= 25
o
C, unless otherwise noted)
I
I
PP
V
F
I
F
V
FC
I
PP
Forward voltage
Forward current
Forward clamping voltage
Peak pulse current
V
RWM
Reverse stand-off voltage
I
R
V
BR
V
CL
I
PP
I
BR
I
R
V
RWM
V
BR
V
CL
I
F
Reverse leakage current
Reverse breakdown voltage
Clamping voltage
Peak pulse current
V
FC
V
F
V
I
PP
Definitions of electrical characteristics
Will Semiconductor Ltd.
2
Revision 1.5, 2018/08/08
ESD56101DXX
Electrical characteristics
(T
A
= 25
o
C, unless otherwise noted)
Table 3.
Reverse
Stand-off
Type number
Voltage
V
RWM
(V)
Max.
ESD56101D05
ESD56101D10
ESD56101D12
ESD56101D15
5.0
10.0
12.0
15.0
Breakdown voltage
V
BR
(V) I
BR
= 1mA
Min.
6.5
11.5
13.0
16.0
Reverse
leakage current
I
RM
(μA) at V
RWM
Typ.
-
-
-
-
Junction
Forward voltage
V
F
(V) I
F
= 20mA
capacitance
F = 1MHz,
VR=0V (pF)
Min.
0.45
0.45
0.45
0.45
Typ.
7.5
13.2
15.0
18.0
Max.
8.5
15.0
17.0
20.0
Max.
1.0
0.1
0.1
0.1
Max.
1.25
1.25
1.25
1.25
Typ.
800
350
300
240
Max.
1200
500
440
350
Table 4.
Rated peak pulse
current I
PP
(A)
1)3)
80
60
50
40
Clamping voltage
V
CL
(V) at I
PP
(A)
1)3)
15.0
22.0
25.0
31.0
Clamping voltage
V
CL
(V) at I
PP
= 16A,
t
p
= 100ns
8.0
15.0
17.0
20.0
2)3)
Clamping voltage
V
CL
(V) at
V
ESD
= 8kV
2)3)
9.0
16.0
18.0
21.0
Type number
ESD56101D05
ESD56101D10
ESD56101D12
ESD56101D15
Notes:
1)
2)
3)
Non-repetitive current pulse, according to IEC61000-4-5.
（
8/20μs current waveform
）
Non-repetitive current pulse, according to IEC61000-4-2.
Measured from pin 1 to pin 2.
Will Semiconductor Ltd.
3
Revision 1.5, 2018/08/08
ESD56101DXX
Electrical characteristics
(T
A
= 25
o
C, unless otherwise noted)
100
90
Front time: T
1
= 1.25
T = 8
s
Time to half-value:
T
2
= 20
s
100
90
Peak pulse current (%)
50
T
2
Current (%)
10
10
0
0
T
T
1
20
Time (
s)
t
r
= 0.7~1ns
30ns
Time (ns)
60ns
t
8/20μs waveform per IEC61000-4-5
35
Pulse waveform: t
p
= 8/20
s
ESD56101D15
Contact discharge current waveform per IEC61000-4-2
C
J
- Junction capacitance (pF)
800
700
600
500
400
300
200
100
ESD56101D10
ESD56101D05
V
C
- Clamping voltage (V)
30
25
20
f = 1MHz
V
AC
= 50mV
ESD56101D12
ESD56101D10
15
10
5
ESD56101D05
ESD56101D12
0
10
20
30
40
50
60
70
80
90
0
ESD56101D15
0
2
4
6
8
10
12
14
I
PP
- Peak pulse current (A)
V
R
- Reverse voltage (V)
Clamping voltage vs. Peak pulse current
10000
Capacitance vs. Reverse voltage
100
Peak pulse power (W)
1000
% of Rated power
80
60
40
20
0
100
1
10
100
Pulse time (
s)
1000
0
25
50
75
100
o
125
150
T
A
- Ambient temperature ( C)
Non-repetitive peak pulse power vs. Pulse time
Power derating vs. Ambient temperature
Will Semiconductor Ltd.
4
Revision 1.5, 2018/08/08
ESD56101DXX
PACKAGE OUTLINE DIMENSIONS
DFN1610-2L
D
L
E
b
e
h
TOP VIEW
BOTTOM VIEW
A3
SIDE VIEW
Symbol
A
A1
c
b
L
D
E
e
h
Recommended PCB Layout (Unit: mm)
0.600
0.625
A1
A
Dimensions in Millimeters
Min.
0.45
0.00
0.75
0.35
1.55
0.95
Typ.
0.50
0.02
0.15 Ref.
0.80
0.40
1.60
1.00
1.10 BSC
0.20 Ref.
0.85
0.45
1.65
1.05
Max.
0.55
0.05
1.000
Notes:
This recommended land pattern is for reference
purposes only. Please consult your manufacturing
group to ensure your PCB design guidelines are met.
5
Revision 1.5, 2018/08/08
1.225
1.850
Will Semiconductor Ltd.
h
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