ESD5621WXX
ESD5621WXX
1-Line, Uni-directional, Transient Voltage Suppressor
http//:www.sh-willsemi.com
Descriptions
The ESD5621WXX is a uni-directional TVS (Transient
Voltage Suppressor). It is specifically designed to protect
sensitive electronic components which are connected to
power lines, from over-stress caused by ESD (Electrostatic
Discharge), EFT (Electrical Fast Transients) and Lightning.
The ESD5621WXX may be used to provide ESD protection
up to ±30kV (contact and air discharge) according to
IEC61000-4-2, and with high surge capability used to protect
USB voltage bus pin (8/20μs) according to IEC61000-4-5.
The ESD5621WXX is available in SOD-323F package.
Standard products are Pb-free and Halogen-free.
SOD-323F (Bottom View)
Pin1
Pin2
Features
Reverse stand-off voltage: 4.5V ~ 15V
Surge protection according to IEC61000-4-5
see
Table 4
ESD protection according to IEC61000-4-2
±30kV (contact and air discharge)
Low clamping voltage
Solid-state silicon technology
XX = Device code
Circuit diagram
Pin1
XX
*
Pin2
Applications
Power supply protection
Power management
*
= Month code
Marking (Top View)
Order information
Table 1.
Device
ESD5621W04-2/TR
ESD5621W10-2/TR
ESD5621W-2/TR
ESD5621W15-2/TR
Package
SOD-323F
SOD-323F
SOD-323F
SOD-323F
Shipping
3000/Tape&Reel
3000/Tape&Reel
3000/Tape&Reel
3000/Tape&Reel
Marking
TE*
TJ*
Q*
TD*
Will Semiconductor Ltd.
1
Revision 1.3, 2017/07/25
ESD5621WXX
Absolute maximum ratings
Table 2.
Parameter
Peak pulse power (tp=8/20μs)
ESD according to IEC61000-4-2 air discharge
ESD according to IEC61000-4-2 contact discharge
Junction temperature
Operating temperature
Lead temperature
Storage temperature
Symbol
Ppk
V
ESD
T
J
T
OP
T
L
T
STG
Rating
1400
±30
±30
125
-40~85
260
-55~150
Unit
W
kV
o
o
o
o
C
C
C
C
Electrical characteristics
(T
A
= 25
o
C, unless otherwise noted)
I
I
PP
V
F
I
F
V
FC
I
PP
Forward voltage
Forward current
Forward clamping voltage
Peak pulse current
V
RWM
Reverse stand-off voltage
I
R
V
BR
V
CL
I
PP
I
BR
I
R
V
RWM
V
BR
V
CL
I
F
Reverse leakage current
Reverse breakdown voltage
Clamping voltage
Peak pulse current
V
FC
V
F
V
I
PP
Definitions of electrical characteristics
Will Semiconductor Ltd.
2
Revision 1.3, 2017/07/25
ESD5621WXX
Electrical characteristics
(T
A
= 25
o
C, unless otherwise noted)
Table 3.
Reverse
Standoff
Type number
Voltage
V
RWM
(V)
Max
ESD5621W04
ESD5621W10
ESD5621W
ESD5621W15
4.5
10.0
12.0
15.0
Breakdown voltage
V
BR
(V)
Min
5.2
11.5
13.0
16.0
Reverse
leakage current
I
RM
(μA) at V
RWM
Typ
-
Junction
Forward voltage
V
F
(V) I
F
= 20mA
Min
0.45
0.45
0.45
0.45
capacitance
F = 1MHz,
V
R
=0V (pF)
I
BR
= 1mA
Typ
6.1
13.2
15.0
18.0
Max
7.0
15.0
17.0
20.0
Max
5.0
0.1
Max
1.25
1.25
1.25
1.25
Typ
900
350
300
270
Max
1200
500
400
350
-
-
0.1
0.1
Table 4.
Rated peak pulse
current
I
PP
（A）
95
60
50
45
1)3)
Type number
ESD5621W04
ESD5621W10
ESD5621W
ESD5621W15
Clamping voltage
V
CL
(V) at I
PP
（A）
14.5
25.0
27.5
31.0
1)3)
Clamping voltage
V
CL
(V) at
I
PP
= 16A,
2)3)
Clamping voltage
V
CL
(V) at
V
ESD
= 8kV
8.0
16.0
17.0
21.0
2)3)
t
p
= 100ns
7.0
15.0
16.0
20.0
Notes:
1)
2)
3)
Non-repetitive current pulse, according to IEC61000-4-5.(8/20µ current waveform)
s
Non-repetitive current pulse, according to IEC61000-4-2.
Measured from pin 1 to pin 2.
Will Semiconductor Ltd.
3
Revision 1.3, 2017/07/25
ESD5621WXX
Typical characteristics
(T
A
= 25
o
C, unless otherwise noted)
100
90
Front time: T
1
= 1.25
T = 8
s
Time to half-value:
T
2
= 20
s
Peak pulse current (%)
100
90
50
T
2
Current (%)
10
10
0
0
T
T
1
20
Time (
s)
t
r
= 0.7~1ns
30ns
Time (ns)
60ns
t
8/20μs waveform per IEC61000-4-5
Pulse waveform: t
p
= 8/20
s
ESD5621W15
ESD5621W
ESD5621W10
ESD5621W04
Contact discharge current waveform per IEC61000-4-2
C
J
- Junction capacitance (pF)
1000
900
800
700
600
500
400
300
200
100
ESD5621W
ESD5621W10
ESD5621W15
ESD5621W04
35
V
C
- Clamping voltage (V)
30
25
20
15
10
5
0
10
20
30
40
50
60
f = 1MHz
V
AC
= 50mV
70
80
90 100
0
0
2
4
6
8
10
12
14
I
PP
- Peak pulse current (A)
V
R
- Reverse voltage (V)
Clamping voltage vs. Peak pulse current
10000
Capacitance vs. Reverse voltage
100
Peak pulse power (W)
1000
% of Rated power
80
60
40
20
0
100
1
10
100
Pulse time (
s)
1000
0
25
50
75
100
o
125
150
T
A
- Ambient temperature ( C)
Non-repetitive peak pulse power vs. Pulse time
Power derating vs. Ambient temperature
Will Semiconductor Ltd.
4
Revision 1.3, 2017/07/25
ESD5621WXX
PACKAGE OUTLINE DIMENSIONS
SOD-323F
D
D1
E
b
TOP VIEW
SIDE VIEW
A
SIDE VIEW
Symbol
A
c
b
D1
E
D
Dimensions in Millimeters
Min.
0.60
0.08
0.25
1.60
1.15
2.30
Typ.
-
0.13
-
1.70
1.25
-
Max.
1.10
0.18
0.40
1.80
1.35
2.80
Recommend land pattern (Unit: mm)
0.80
1.40
0.80
0.80
Notes:
This recommended land pattern is for reference
purposes only. Please consult your manufacturing
2.20
group to ensure your PCB design guidelines are met.
Will Semiconductor Ltd.
5
c
Revision 1.3, 2017/07/25
FPGA/CPLD
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